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  1. 1.
    0368043 - ÚFE 2012 RIV US eng J - Journal Article
    Grym, Jan - Procházková, Olga - Yatskiv, Roman - Piksová, K.
    Hydrogen sensors based on electrophoretically deposited Pd nanoparticles onto InP.
    Nanoscale Research Letters. Roč. 6, č. 392 (2011), 3921-3925. ISSN 1931-7573. E-ISSN 1556-276X
    R&D Projects: GA ČR GA102/09/1037; GA AV ČR KJB200670901
    Institutional research plan: CEZ:AV0Z20670512
    Keywords : nanoparticles * gas sensors * III-V semiconductors
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Impact factor: 2.726, year: 2011
    Permanent Link: http://hdl.handle.net/11104/0202514
    FileDownloadSizeCommentaryVersionAccess
    UFE 0368043.pdf1731.9 KBOtherrequire
     
     
  2. 2.
    0368041 - ÚFE 2012 RIV GB eng J - Journal Article
    Yatskiv, Roman - Grym, Jan - Žďánský, Karel
    Particle detectors based on semiconducting InP epitaxial layers.
    Journal of Instrumentation. Roč. 6, C01072 (2011), C010721-C010725. ISSN 1748-0221. E-ISSN 1748-0221
    R&D Projects: GA AV ČR KJB200670901; GA MŠMT(CZ) OC10021; GA ČR(CZ) GP102/08/P617
    Institutional research plan: CEZ:AV0Z20670512
    Keywords : Solid state detectors * Gamma detectors * Radiation-hard detectors
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Impact factor: 1.869, year: 2011
    Permanent Link: http://hdl.handle.net/11104/0202512
    FileDownloadSizeCommentaryVersionAccess
    UFE 0368041.pdf1130 KBOtherrequire
     
     
  3. 3.
    0349841 - ÚFE 2011 RIV NL eng J - Journal Article
    Yatskiv, Roman - Grym, Jan - Žďánský, Karel - Pekárek, Ladislav
    Room temperature particle detectors based on indium phosphide.
    Nuclear Instruments & Methods in Physics Research Section A. Roč. 612, č. 2 (2010), s. 334-337. ISSN 0168-9002. E-ISSN 1872-9576
    R&D Projects: GA AV ČR KJB200670901; GA AV ČR(CZ) KAN401220801; GA ČR(CZ) GP102/08/P617
    Institutional research plan: CEZ:AV0Z20670512
    Keywords : Particle detector * Semi-insulating InP * High purity InP layers
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Impact factor: 1.142, year: 2010
    Permanent Link: http://hdl.handle.net/11104/0189978
     
     
  4. 4.
    0346107 - ÚFE 2011 RIV GB eng J - Journal Article
    Yatskiv, Roman - Voves, J.
    Analysis of the resonant tunneling diode with the stepped pre-barrier.
    Journal of Physics: Conference Series. Roč. 193, č. 1 (2009), s. 1-4. ISSN 1742-6588. E-ISSN 1742-6596.
    [16th International Conference on Electron Dynamics In Semiconductors, Optoelectronics and Nanostructure. Monpellier, 24.8.2009 – 28.8.2009]
    R&D Projects: GA AV ČR KJB200670901; GA AV ČR(CZ) KAN401220801
    Institutional research plan: CEZ:AV0Z20670512
    Keywords : Resonant tunneling diodes * Nonequilibrium Green functions * Hysteresis
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Permanent Link: http://hdl.handle.net/11104/0187215
     
     


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