Search results
- 1.0396370 - FZÚ 2014 RIV CH eng J - Journal Article
Hazdra, P. - Oswald, Jiří - Hospodková, Alice - Hulicius, Eduard - Pangrác, Jiří
Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs.
Thin Solid Films. Roč. 543, Sept (2013), 83-87. ISSN 0040-6090. E-ISSN 1879-2731
R&D Projects: GA ČR GAP102/10/1201; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : quantum dots * electroluminescence * metalorganic vapor phase epitaxy * InAs * GaAsSb * light emitting diodes
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.867, year: 2013
Permanent Link: http://hdl.handle.net/11104/0224172 - 2.0383781 - FZÚ 2013 RIV GB eng J - Journal Article
Kuldová, Karla - Molas, M. - Borysiuk, J. - Babinski, A. - Výborný, Zdeněk - Pangrác, Jiří - Oswald, Jiří
Quantum confinement in MOVPE-grown structures with self-assembled InAs/GaAs quantum dots.
Journal of Physics: Conference Series. Roč. 245, č. 1 (2010), s. 1-5. ISSN 1742-6588. E-ISSN 1742-6596.
[Conference on Quantum Dots 2010. Nottingham, 26.08.2010-30.08.2010]
R&D Projects: GA ČR GAP102/10/1201; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : photoluminescence * InAs/GaAs * quantum dots
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0213619 - 3.0383779 - FZÚ 2013 RIV GB eng J - Journal Article
Oswald, Jiří - Hazdra, P. - Kuldová, Karla - Hospodková, Alice - Hulicius, Eduard - Pangrác, Jiří - Vyskočil, Jan
Electro- and photoluminescence of InAs/GaAs quantum dot structures.
Journal of Physics: Conference Series. Roč. 245, č. 1 (2010), s. 1-5. ISSN 1742-6588. E-ISSN 1742-6596.
[Conference on Quantum Dots 2010. Nottingham, 26.08.2010-30.08.2010]
R&D Projects: GA ČR GAP102/10/1201; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : electroluminescence * photoluminescence * spectroscopy * InAs QDs
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0213617 - 4.0371379 - FZÚ 2012 RIV NL eng J - Journal Article
Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hazdra, P. - Kuldová, Karla - Vyskočil, Jan - Hulicius, Eduard
Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures.
Journal of Crystal Growth. Roč. 315, č. 1 (2011), 110-113. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR GAP102/10/1201; GA MŠMT LC510; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : low dimensional structures * photoluminescence * electroluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III–V materials
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.726, year: 2011
Permanent Link: http://hdl.handle.net/11104/0204912 - 5.0367915 - FZÚ 2012 RIV US eng J - Journal Article
Hazdra, P. - Oswald, Jiří - Komarnitskyy, V. - Kuldová, Karla - Hospodková, Alice - Hulicius, Eduard - Pangrác, Jiří
Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 μm bands.
Journal of Nanoscience and Nanotechnology. Roč. 11, č. 8 (2011), s. 6804-6809. ISSN 1533-4880
R&D Projects: GA ČR GAP102/10/1201; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : quantum dots * MOVPE * InAs * GaAs * photoluminescence * electroluminescence
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.563, year: 2011
Permanent Link: http://hdl.handle.net/11104/0202422 - 6.0359526 - FZÚ 2012 RIV NL eng J - Journal Article
Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Oswald, Jiří - Vetushka, Aliaksi - Caha, O. - Hazdra, P. - Kuldová, Karla - Hulicius, Eduard
InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime.
Journal of Crystal Growth. Roč. 317, č. 1 (2011), s. 39-42. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253; GA MŠMT LC510; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : low dimensional structures * photoluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III–V materials
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.726, year: 2011
Permanent Link: http://hdl.handle.net/11104/0197302 - 7.0342440 - FZÚ 2011 RIV NL eng J - Journal Article
Hospodková, Alice - Hulicius, Eduard - Pangrác, Jiří - Oswald, Jiří - Vyskočil, Jan - Kuldová, Karla - Šimeček, Tomislav - Hazdra, P. - Caha, O.
InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots.
Journal of Crystal Growth. Roč. 312, č. 8 (2010), 1383-1387. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA AV ČR IAA100100719; GA ČR GA202/09/0676; GA MŠMT LC510
Institutional research plan: CEZ:AV0Z10100521
Keywords : low dimensional structures * photoluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III/V materials
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.737, year: 2010
Permanent Link: http://hdl.handle.net/11104/0185175 - 8.0342088 - FZÚ 2011 RIV NL eng J - Journal Article
Hospodková, Alice - Vyskočil, Jan - Pangrác, Jiří - Oswald, Jiří - Hulicius, Eduard - Kuldová, Karla
Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy.
Surface Science. Roč. 604, 3-4 (2010), 318-321. ISSN 0039-6028. E-ISSN 1879-2758
R&D Projects: GA AV ČR IAA100100719; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : low-pressure Metal–Organic Vapor Phase * InAs/GaAs quantum dots * reflectance anisotropy spectroscopy Surface reconstruction * surface reconstruction
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.010, year: 2010
Permanent Link: http://hdl.handle.net/11104/0184913 - 9.0337368 - FZÚ 2012 RIV CH eng J - Journal Article
Hazdra, P. - Oswald, Jiří - Komarnitskyy, V. - Kuldová, Karla - Hospodková, Alice - Vyskočil, Jan - Hulicius, Eduard - Pangrác, Jiří
InAs/GaAs quantum dot structures emitting in the 1.55 μm band.
[Struktura s InAs/GaAs kvantovými tečkami emitující na 1.55 μm.]
IOP Conference Series: Materials Science and Engineering. Roč. 6, č. 1 (2009), 012007/1-012007/4. ISSN 1757-8981
R&D Projects: GA AV ČR IAA100100719; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : quantum dots * InAs * GaAs * photoluminescence
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0181384