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- 1.0368041 - ÚFE 2012 RIV GB eng J - Journal Article
Yatskiv, Roman - Grym, Jan - Žďánský, Karel
Particle detectors based on semiconducting InP epitaxial layers.
Journal of Instrumentation. Roč. 6, C01072 (2011), C010721-C010725. ISSN 1748-0221. E-ISSN 1748-0221
R&D Projects: GA AV ČR KJB200670901; GA MŠMT(CZ) OC10021; GA ČR(CZ) GP102/08/P617
Institutional research plan: CEZ:AV0Z20670512
Keywords : Solid state detectors * Gamma detectors * Radiation-hard detectors
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 1.869, year: 2011
Permanent Link: http://hdl.handle.net/11104/0202512File Download Size Commentary Version Access UFE 0368041.pdf 1 130 KB Other require - 2.0349841 - ÚFE 2011 RIV NL eng J - Journal Article
Yatskiv, Roman - Grym, Jan - Žďánský, Karel - Pekárek, Ladislav
Room temperature particle detectors based on indium phosphide.
Nuclear Instruments & Methods in Physics Research Section A. Roč. 612, č. 2 (2010), s. 334-337. ISSN 0168-9002. E-ISSN 1872-9576
R&D Projects: GA AV ČR KJB200670901; GA AV ČR(CZ) KAN401220801; GA ČR(CZ) GP102/08/P617
Institutional research plan: CEZ:AV0Z20670512
Keywords : Particle detector * Semi-insulating InP * High purity InP layers
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 1.142, year: 2010
Permanent Link: http://hdl.handle.net/11104/0189978 - 3.0341490 - ÚFE 2011 RIV RO eng J - Journal Article
Procházková, Olga - Grym, Jan - Zavadil, Jiří - Žďánský, Karel - Lorinčík, Jan
Influence of Yb AND Yb2O3 addition on the properties of InP layers.
Journal of Optoelectronics and Advanced Materials. Roč. 10, č. 12 (2008), s. 3261-3264. ISSN 1454-4164. E-ISSN 1841-7132
R&D Projects: GA ČR GA102/06/0153; GA ČR(CZ) GP102/08/P617
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * rare earth elements * InP
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 0.577, year: 2008
Permanent Link: http://hdl.handle.net/11104/0005810 - 4.0341444 - ÚFE 2010 RIV CH eng J - Journal Article
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
LPE growth of InP layers from rare-earth treated melts for radiation detector structures.
Materials Science and Engineering B-Advanced Functional Solid-State Materials. Roč. 165, 1-2 (2009), s. 94-97. ISSN 0921-5107. E-ISSN 1873-4944
R&D Projects: GA ČR(CZ) GP102/08/P617; GA ČR GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * rare earth elements * III-V semiconductors
Subject RIV: JJ - Other Materials
Impact factor: 1.715, year: 2009
Permanent Link: http://hdl.handle.net/11104/0184438