Search results
- 1.0346227 - ÚFE 2011 PL eng C - Conference Paper (international conference)
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
InGaAsP/InP infrared light emitting diodes prepared by liquid phase epitaxy from rare-earth treated melt.
XXXVIII International School and Conference on the Physics of Semiconductors, ”Jaszowiec” 2009. Krynica-Zdroj: Polish Academy of Sciences, Institute of Physics, 2009, s. 129-129.
[XXXVIII International School and Conference on the Physics of Semiconductors, ”Jaszowiec” 2009. Krynica-Zdroj (PL), 19.06.2009-26.06.2009]
R&D Projects: GA ČR GA102/09/1037; GA ČR(CZ) GP102/08/P617
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * Rare-earth elements * III-V semiconductors
Subject RIV: JJ - Other Materials
Permanent Link: http://hdl.handle.net/11104/0187303 - 2.0346104 - ÚFE 2011 RIV CZ eng C - Conference Paper (international conference)
Yatskiv, Roman - Grym, Jan - Žďánský, Karel - Pekárek, Ladislav - Zavadil, Jiří
GROWTH OF InP CRYSTALS WITH RARE-EARTH ELEMENTS.
2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM). NEW YORK: IEE, 2009, s. 91-93. International Conference on Indium Phosphide and Related Materials. ISBN 978-1-4244-3432-9. ISSN 1092-8669.
[21st International Conference on Indium Phosphide and Related Materials. Newport Beach (US), 10.05.2009-14.05.2009]
R&D Projects: GA AV ČR KJB200670901; GA ČR(CZ) GP102/08/P617; GA AV ČR KAN400670651
Institutional research plan: CEZ:AV0Z20670512
Keywords : Rare-earth elements * Crystals growth * InP
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0187213 - 3.0346036 - ÚFE 2011 CZ eng C - Conference Paper (international conference)
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
LPE Growth of III-V Semiconductors from rare-earth Treated Melts.
Proceedings of the 18th Joint seminar Development of materials science in research and education. Praha: Czechoslovak association for crystal growth, 2008 - (Nitsch, K.; Rodová, M.), s. 16-17. ISBN 978-80-254-0864-3.
[18. Development of Materials Science in Research and Education. Hnanice (CZ), 02.09.2008-05.09.2008]
R&D Projects: GA ČR(CZ) GP102/08/P617; GA ČR GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * rare earth elements * III-V semiconductors
Subject RIV: JJ - Other Materials
Permanent Link: http://hdl.handle.net/11104/0187165 - 4.0346035 - ÚFE 2011 PL eng C - Conference Paper (international conference)
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
LPE growth of InP layers from rare-earth treated melts for the radiation detection structures.
EXMATEC 2008. Lodž: IEEE, 2008 - (Ciupa, E.; Sibinski, M.; Podgorski, J.; Bielska, S.), s. 171-172. ISBN 978-83-915220-1-1.
[9TH International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies. Lodž (PL), 01.06.2008-04.06.2008]
R&D Projects: GA ČR(CZ) GP102/08/P617; GA ČR GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * rare earth elements * III-V semiconductors
Subject RIV: JJ - Other Materials
Permanent Link: http://hdl.handle.net/11104/0187164 - 5.0308798 - ÚFE 2011 RIV US eng C - Conference Paper (international conference)
Procházková, Olga - Grym, Jan - Zavadil, Jiří - Lorinčík, Jan - Žďánský, Karel
Influence of Yb and Yb2O3 on the properties of InP layers.
[Vliv Yb a Yb2O3 na vlastnosti InP vrstev.]
IPRM 2008 - Proceedings of the 20th Indium Phosphide and Related Materials Conference. Piscataway: Institute of Electrical and Electronic Engineers, 2008, ---. ISBN 978-1-4244-2258-6. ISSN 1092-8669.
[IPRM 2008 - Indium Phosphide and Related Materials Conference /20./. Versailles (FR), 25.05.2008-29.05.2008]
R&D Projects: GA ČR GA102/06/0153; GA ČR(CZ) GP102/08/P617
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * indium compounds * rare earth compounds
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0161159