Search results
- 1.0484348 - FZÚ 2018 RIV GB eng J - Journal Article
Hospodková, Alice - Vyskočil, Jan - Zíková, Markéta - Oswald, Jiří - Pangrác, Jiří - Petříček, Otto
GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD.
Materials Research Express. Roč. 4, č. 2 (2017), s. 1-8, č. článku 025502. E-ISSN 2053-1591
R&D Projects: GA ČR(CZ) GP14-21285P; GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : GaAsSb * InAs * InGaAs * quantum dot * solar cells * MOVPE
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.151, year: 2017
Permanent Link: http://hdl.handle.net/11104/0279501 - 2.0474050 - FZÚ 2018 RIV NL eng J - Journal Article
Vyskočil, Jan - Hospodková, Alice - Petříček, Otto - Pangrác, Jiří - Zíková, Markéta - Oswald, Jiří - Vetushka, Aliaksi
GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications.
Journal of Crystal Growth. Roč. 464, Apr (2017), s. 64-68. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR(CZ) GP14-21285P; GA MŠMT LO1603
Institutional support: RVO:68378271
Keywords : InAs * GaAsSb * InGaAs * quantum dot * solar cells
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.742, year: 2017
Permanent Link: http://hdl.handle.net/11104/0271148 - 3.0458379 - FZÚ 2017 RIV NL eng J - Journal Article
Hospodková, Alice - Oswald, Jiří - Pangrác, Jiří - Kuldová, Karla - Zíková, Markéta - Vyskočil, Jan - Hulicius, Eduard
Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures.
Physica B-Condensed Matter. Roč. 480, Jan (2016), 14-22. ISSN 0921-4526. E-ISSN 1873-2135
R&D Projects: GA ČR GA13-15286S; GA ČR(CZ) GP14-21285P; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : quantum dot * band alignment * InAs/GaAs * GaAsSb * MOVPE * luminescence
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.405, year: 2016
Permanent Link: http://hdl.handle.net/11104/0258645 - 4.0447828 - FZÚ 2016 RIV NL eng J - Journal Article
Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Zíková, Markéta - Oswald, Jiří - Komninou, Ph. - Hulicius, Eduard
Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy.
Journal of Crystal Growth. Roč. 414, Mar (2015), s. 156-160. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR(CZ) GP14-21285P; GA ČR GA13-15286S; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : MOVPE * InAs/GaAs MQD * GaAsSb SRL * RAS
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.462, year: 2015
Permanent Link: http://hdl.handle.net/11104/0249602 - 5.0447827 - FZÚ 2016 RIV NL eng J - Journal Article
Vyskočil, Jan - Gladkov, Petar - Petříček, Václav - Hospodková, Alice - Pangrác, Jiří
Growth and properties of AIII BV QD structures for intermediate band solar cells.
Journal of Crystal Growth. Roč. 414, č. 172 (2015), s. 172-176. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR(CZ) GP14-21285P
Institutional support: RVO:68378271 ; RVO:67985882
Keywords : metalorganic vapor phase epitaxy * InAs/GaAs Quantum dots * GaAsSb Strain reducing layer * solar cells
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.462, year: 2015
Permanent Link: http://hdl.handle.net/11104/0249601 - 6.0431316 - FZÚ 2015 RIV NL eng J - Journal Article
Hospodková, Alice - Pangrác, Jiří - Zíková, Markéta - Oswald, Jiří - Vyskočil, Jan - Komninou, Ph. - Kioseoglou, J. - Florini, N. - Hulicius, Eduard
Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots.
Applied Surface Science. Roč. 301, SI (2014), 173-177. ISSN 0169-4332. E-ISSN 1873-5584
R&D Projects: GA ČR GA13-15286S; GA MŠMT(CZ) LM2011026; GA MŠMT 7AMB12GR034
Institutional support: RVO:68378271
Keywords : quantum dots * InAs * GaAs * GaAsSb * reflectance anisotropy spectroscopy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.711, year: 2014
Permanent Link: http://hdl.handle.net/11104/0235894 - 7.0392283 - FZÚ 2014 RIV NL eng J - Journal Article
Hospodková, Alice - Zíková, Markéta - Pangrác, Jiří - Oswald, Jiří - Kuldová, Karla - Vyskočil, Jan - Hulicius, Eduard
Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots.
Journal of Crystal Growth. Roč. 370, MAY (2013), s. 303-306. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR GAP102/10/1201
Institutional research plan: CEZ:AV0Z10100521
Keywords : band alignment * photoluminescence * strain reducing layer * quantum dot * MOVPE * InAs/GaAs
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.693, year: 2013
Permanent Link: http://hdl.handle.net/11104/0221191 - 8.0383779 - FZÚ 2013 RIV GB eng J - Journal Article
Oswald, Jiří - Hazdra, P. - Kuldová, Karla - Hospodková, Alice - Hulicius, Eduard - Pangrác, Jiří - Vyskočil, Jan
Electro- and photoluminescence of InAs/GaAs quantum dot structures.
Journal of Physics: Conference Series. Roč. 245, č. 1 (2010), s. 1-5. ISSN 1742-6588. E-ISSN 1742-6596.
[Conference on Quantum Dots 2010. Nottingham, 26.08.2010-30.08.2010]
R&D Projects: GA ČR GAP102/10/1201; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : electroluminescence * photoluminescence * spectroscopy * InAs QDs
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0213617 - 9.0371379 - FZÚ 2012 RIV NL eng J - Journal Article
Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hazdra, P. - Kuldová, Karla - Vyskočil, Jan - Hulicius, Eduard
Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures.
Journal of Crystal Growth. Roč. 315, č. 1 (2011), 110-113. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR GAP102/10/1201; GA MŠMT LC510; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : low dimensional structures * photoluminescence * electroluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III–V materials
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.726, year: 2011
Permanent Link: http://hdl.handle.net/11104/0204912 - 10.0359526 - FZÚ 2012 RIV NL eng J - Journal Article
Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Oswald, Jiří - Vetushka, Aliaksi - Caha, O. - Hazdra, P. - Kuldová, Karla - Hulicius, Eduard
InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime.
Journal of Crystal Growth. Roč. 317, č. 1 (2011), s. 39-42. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253; GA MŠMT LC510; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : low dimensional structures * photoluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III–V materials
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.726, year: 2011
Permanent Link: http://hdl.handle.net/11104/0197302