Search results
- 1.0312859 - FZÚ 2009 RIV DE eng J - Journal Article
De Ranieri, E. - Rushforth, A.W. - Výborný, Karel - Rana, U. - Ahmad, E. - Campion, R. P. - Foxon, C. T. - Gallagher, B. L. - Irvine, A.C. - Wunderlich, J. - Jungwirth, Tomáš
Lithographically and electrically controlled strain effects on AMR in (Ga,Mn)As.
[Litograficky a elektricky ovladane vlivy mechanickych deformaci na AMR v (Ga,Mn)As.]
New Journal of Physics. Roč. 10, č. 6 (2008), 065003/1-065003/19. ISSN 1367-2630. E-ISSN 1367-2630
R&D Projects: GA MŠMT LC510; GA AV ČR KJB100100802; GA AV ČR KAN400100652; GA ČR GEFON/06/E002
Institutional research plan: CEZ:AV0Z10100521
Keywords : anomalous Hall effect * Keldysh formalism * Rashba system
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.440, year: 2008
Permanent Link: http://hdl.handle.net/11104/0163813 - 2.0097606 - FZÚ 2008 RIV US eng J - Journal Article
Wunderlich, J. - Irvine, A.C. - Zemen, Jan - Holý, V. - Rushforth, A.W. - De Ranieri, E. - Rana, U. - Výborný, Karel - Sinova, J. - Foxon, C. T. - Campion, R. P. - Williams, D.A. - Gallagher, B. L. - Jungwirth, Tomáš
Local control of magnetocrystalline anisotropy in (Ga,Mn)As microdevices: demonstration in current-induced switching.
[Lokální kontrola magnetokrystalické anisotropie v GaMnAs mikrosoučástkách: ukázka na proudem indukovaném přepínání magnetizace.]
Physical Review. B. Roč. 76, č. 5 (2007), 054424/1-054424/8. ISSN 1098-0121
R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/06/0025; GA ČR GA202/04/1519; GA ČR GEFON/06/E002; GA MŠMT LC510
Institutional research plan: CEZ:AV0Z10100521
Keywords : ferromagnetic semiconductors * magnetocrystalline anisotropy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.172, year: 2007
Permanent Link: http://hdl.handle.net/11104/0156710 - 3.0079015 - FZÚ 2007 RIV US eng J - Journal Article
Wunderlich, J. - Jungwirth, Tomáš - Kaestner, B. - Irvine, A.C. - Shick, Alexander - Stone, N. - Wang, K. Y. - Rana, U. - Giddings, A.D. - Foxon, C. T. - Campion, R. P. - Williams, D.A. - Gallagher, B. L.
Coulomb Blockade Anisotropic Magnetoresistance Effect in a (Ga,Mn)As Single-Electron Transistor.
[Anisotropní magnetoresistence v režimu Coulombovské blokády v jednoelektronovém transistoru na bázi (Ga,Mn)As.]
Physical Review Letters. Roč. 97, č. 7 (2006), 077201/1-077201/4. ISSN 0031-9007. E-ISSN 1079-7114
R&D Projects: GA ČR GA202/05/0575; GA MŠMT LC510
Grant - others:EPSRC(GB) GR/S81407/01
Institutional research plan: CEZ:AV0Z10100521
Keywords : anisotropic magnetoresistance * Coulomb blockade * single electron transistor
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 7.072, year: 2006
Permanent Link: http://hdl.handle.net/11104/0143916