0043491 - FZÚ 2007 RIV US eng C - Conference Paper (international conference)
Kindl, Dobroslav - Hubík, Pavel - Krištofik, Jozef - Mareš, Jiří J. - Výborný, Zdeněk - Leys, M.R. - Boeykens, S.Deep defects in MOVPE grown SiC/AlGaN/GaN heterostructures.
[Hluboké defekty v heterostrukturách SiC/AlGaN/GaN připravených metodou MOVPE.]
ASDAM´06. Danvers, MA: IEEE, 2006 - (Breza, J.; Donoval, D.; Vavrinský, E.), s. 51-54. ISBN 1-4244-0396-0.
[International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle (SK), 16.10.2006-18.10.2006]
R&D Projects: GA AV ČR(CZ) IAA1010404
Institutional research plan: CEZ:AV0Z10100521
Keywords : deep levels * nitride layers * 4H-SiC
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0136468
