Search results
- 1.0088292 - ÚFE 2008 DE eng A - Abstract
Pekárek, Ladislav - Žďánský, Karel
Characterization of indium phosphide single crystals for X-ray detection.
[Charakterizace monokrystalů fosfidu india pro detekci rtg záření.]
DRIP-XII 2007:12th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors. Programme & Abstracts. Berlin: [Forschungsverbund Berlin], 2007. s. 132--.
[DRIP /12./. 09.09.2007-13.09.2007, Berlin]
R&D Projects: GA ČR GA102/06/0153; GA AV ČR KAN400670651
Institutional research plan: CEZ:AV0Z20670512
Keywords : crystal growth * radiation detection * semiconductors
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0149869 - 2.0088219 - ÚFE 2008 DE eng A - Abstract
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
InP layers grown from Pr treated melts.
[Vrstvy InP připravené z taveniny obasahující Pr.]
DRIP-XII 2007:12th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors. Programme & Abstracts. Berlin: [Forschungsverbund Berlin], 2007. s. 130--.
[DRIP /12./. 09.09.2007-13.09.2007, Berlin]
R&D Projects: GA ČR GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * rare earth compounds * III-V semiconductors
Subject RIV: JJ - Other Materials
Permanent Link: http://hdl.handle.net/11104/0149823 - 3.0088197 - ÚFE 2008 PL eng A - Abstract
Grym, Jan - Procházková, Olga - Lorinčík, Jan - Zavadil, Jiří - Žďánský, Karel
Characterization of Pr, Yb, and Ce doped InP layers by PL and SIMS.
[Charakterizace vrstev InP dopovaných Pr, Yb, a Ce metodami PL a SIMS.]
ICSSC-5 & PCCCG-8: Fifth International Conference on Solid State Crystals and Eight Polish Conference on Crystal Growth. Scientific Programme and Book Abstracts. Warszawa: Conference Engine, 2007. s. 17--. ISBN 83-89585-14-6.
[ICSSC /5./ & PCCCG /8./. 24.05.2007-25.05.2007, Zakopane]
R&D Projects: GA ČR GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * rare earth compounds * III-V semiconductors
Subject RIV: JJ - Other Materials
Permanent Link: http://hdl.handle.net/11104/0149808 - 4.0088191 - ÚFE 2008 US eng A - Abstract
Grym, Jan - Procházková, Olga
Rare-earth elements in epitaxial growth of InP layers.
[Vrstvy vzácných zemin v epitaxním růstu InP vrstev.]
ISSCG-13: The 13th International Summer School on Crystal Growth. [Warren]: [American Association for Crystal Growth], 2007. s. 58--.
[ISSCG /13./. 05.08.2007-11.08.2007, Park City]
R&D Projects: GA ČR GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * rare earth compounds * III-V semiconductors
Subject RIV: JJ - Other Materials
Permanent Link: http://hdl.handle.net/11104/0149806 - 5.0088189 - ÚFE 2008 US eng A - Abstract
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
On the behaviour of rare-earth oxides in LPE growth of InP layers.
[O chování oxidů vzácných zemin při růstu vrstev InP metodou LPE.]
2007 Proceedings of the 15th International Conference on Crystal Growth held in conjuction with the 13th International Conference on Vapour Growth and Epitaxy and the 13th Biennial Workshop on Organometallic Vapor Phase Epitaxy and 13th Biennial Workshop on Organometallic Vapor Phase Epitaxy. [Salt Lake City]: OMNI Press, 2007. s. 1031--.
[ICCG /15./ with the ICVGE /13./ and OMVPE /13./. 12.08.2007-17.08.2007, Salt Lake City]
R&D Projects: GA ČR GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * rare earth compounds * III-V semiconductors
Subject RIV: JJ - Other Materials
Permanent Link: http://hdl.handle.net/11104/0149805 - 6.0087828 - ÚFE 2008 PL eng A - Abstract
Grym, Jan - Procházková, Olga - Šrobár, Fedor
Gettering effects of rare-earth elements in the growth of InP layers.
[Getrační efekty prvků vzácných zemin při růstu vrstev InP.]
XXXVI International School on the Physics of Semiconducting Compounds Jaszowiec 2007. Warsaw: Polish Academy of Sciences, Institute of Physics, 2007. s. 38--.
[International School on the Physics of Semiconducting Compounds Jaszowiec 2007 /36./. 09.06.2007-15.06.2007, Jaszowiec]
R&D Projects: GA ČR GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * rare earth compounds * III-V semiconductors
Subject RIV: JJ - Other Materials
http://info.ifpan.edu.pl/Jaszowiec/J2007/Jaszowiec2007_booklet_web.pdf
Permanent Link: http://hdl.handle.net/11104/0004203 - 7.0082999 - ÚFE 2007 US eng A - Abstract
Procházková, Olga - Grym, Jan - Pekárek, Ladislav - Zavadil, Jiří - Žďánský, Karel
InP based semioconductor stuctures for radiation detection.
[Polovodičové strukturry na bázi InP pro detekci záření.]
Abstracts of the Semiconducting & Insulating Materials Conference - SIMC XIV. Fayetteville: University of Arkansas, 2007. s. a213088--.
[Semiconducting & Insulating Materials Conference - SIMC /14./. 15.05.2007-20.05.2007, Fayetteville]
R&D Projects: GA ČR(CZ) GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * rare earth compounds * radiation detectors
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0146392 - 8.0043311 - ÚFE 2007 RO eng A - Abstract
Zavadil, Jiří - Procházková, Olga - Žďánský, Karel
InP p-type epitaxial layers grown with the addition of rare earth elements for use in radiation detection.
[InP epitaxní vrstvy typu p připravené s přidáním vzácných zemin pro využití v detekci radiačního záření.]
ROCAM 2006. 5th International Edition of Romanian Conference on Advanced Materials. Bucuresti: Editura Universitatii din Bucuresti, 2006 - (Stanculescu, F.). 18--. ISSN 1842-3574.
[ROCAM 2006 - Romanian Conference on Advanced Materials /5./. 11.09.2006-14.11.2006, Bucuresti]
R&D Projects: GA ČR(CZ) GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductors * photoluminescence * galvanomagnetic effects
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0136334 - 9.0043308 - ÚFE 2007 ES eng A - Abstract
Zavadil, Jiří - Žďánský, Karel - Procházková, Olga - Gladkov, Petar
Ce and Yb doped InP layers grown for radiation detection.
[InP vrstvy dotované Ce a Yb pro využití v detekci radiačního záření.]
Book of Abstracts EXMATEC'06. Cádiz: Universidad de Cádiz, 2006 - (Sales, D.). s. 62--
[EXMATEC 2006 - International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies /8./. 14.05.2006-17.05.2006, Cádiz]
R&D Projects: GA ČR(CZ) GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductors * photoluminescence * galvanomagnetic effects
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0136331 - 10.0043180 - ÚFE 2007 PL eng A - Abstract
Grym, Jan - Procházková, Olga - Žďánský, Karel - Zavadil, Jiří - Lorinčík, Jan
Impact of rare-earth elements and their oxides on growth and properties of InP LPE layers.
[Vliv prvků vzácných zemin a jejich oxidů na růst a vlastnosti vrstev InP připravených kapalnou epitaxí.]
XXXV International School on the Physics of Semiconducting Compounds Jaszowiec 2006. Program & Abstracts. Warsaw: Institute of Physics, Polish Academy of Sciences, 2006. 52--.
[International School on the Physics of Semiconducting Compounds Jaszowiec 2006 /35./. 17.06.2006-23.06.2006, Ustron-Jaszowiec]
R&D Projects: GA ČR(CZ) GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : liquid phase epitaxy * III-V semiconductors * rare earth compounds
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0136239