Search results

  1. 1.
    0396642 - ÚFE 2014 RIV CH eng J - Journal Article
    Žďánský, Karel - Dickerson, J.H.
    Improved speed of hydrogen detection by Schottky diodes on InP with electrophoretically deposited Pt nanoparticles and graphite contacts.
    Sensors and Actuators B - Chemical. -, č. 184 (2013), s. 295-300. E-ISSN 0925-4005
    R&D Projects: GA MŠMT(CZ) OC10021
    Institutional support: RVO:67985882
    Keywords : Metal nanoparticles * Keyed electrophoresis * Hydrogen sensors
    Subject RIV: JB - Sensors, Measurment, Regulation
    Impact factor: 3.840, year: 2013
    Permanent Link: http://hdl.handle.net/11104/0224428
     
     
  2. 2.
    0387579 - ÚFE 2013 RIV PL eng J - Journal Article
    Žďánský, Karel - Černohorský, Ondřej - Yatskiv, Roman
    Hydrogen sensors made on InP or GaN with electrophoretically deposited Pd or Pt nanoparticles.
    Acta Physica Polonica A. Roč. 122, č. 3 (2012), s. 572-575. ISSN 0587-4246. E-ISSN 1898-794X
    R&D Projects: GA MŠMT(CZ) OC10021
    Institutional support: RVO:67985882
    Keywords : semiconductor devices * nanostructures * sensors
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Impact factor: 0.531, year: 2012
    Permanent Link: http://hdl.handle.net/11104/0220072
     
     
  3. 3.
    0387460 - ÚFE 2013 RIV CH eng J - Journal Article
    Žďánský, Karel - Yatskiv, Roman
    Schottky bariers on InP and GaN made by deposition of colloidal graphite and Pd, Pt or bimetal Pd/Pt nanoparticles for H2-gas detection.
    Sensors and Actuators B - Chemical. Roč. 165, č. 1 (2012), s. 104-109. E-ISSN 0925-4005
    Institutional support: RVO:67985882
    Keywords : semiconductor devices * nanostructures * sensors
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Impact factor: 3.535, year: 2012
    Permanent Link: http://hdl.handle.net/11104/0220075
    FileDownloadSizeCommentaryVersionAccess
    UFE 0387460.pdf4719.6 KBOtherrequire
     
     
  4. 4.
    0387292 - ÚFE 2013 RIV US eng J - Journal Article
    Žďánský, Karel
    Graphite/InP and graphite/GaN Schottky barrier hydrogen sensors with electrophoretically deposited Pd or Pt nanoparticles.
    Nanoscale Research Letters. Roč. 7, č. 415 (2012), s. 4151-4156. ISSN 1931-7573. E-ISSN 1556-276X
    R&D Projects: GA MŠMT(CZ) OC10021
    Institutional support: RVO:67985882
    Keywords : semiconductor devices * nanostructures * sensors
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Impact factor: 2.524, year: 2012
    Permanent Link: http://hdl.handle.net/11104/0220245
     
     
  5. 5.
    0382126 - ÚFE 2013 RIV DE eng J - Journal Article
    Yatskiv, Roman - Grym, Jan - Žďánský, Karel
    High sensitivity hydrogen sensors based on GaN.
    Physica status solidi C. Roč. 7, č. 9 (2012), s. 1661-1663. E-ISSN 1610-1642.
    [16th International Semiconducting and Insulating Materials Conference (SIMC-XVI). Stockholm, 19.06.2011-23.06.2011]
    R&D Projects: GA MŠMT(CZ) OC10021
    Institutional support: RVO:67985882
    Keywords : Pt nanoparticles * Graphite based Schottky diodes * Hydrogen sensor * GaN
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Permanent Link: http://hdl.handle.net/11104/0216539
     
     
  6. 6.
    0382124 - ÚFE 2013 RIV US eng J - Journal Article
    Yatskiv, Roman - Grym, Jan - Žďánský, Karel - Piksová, K.
    Semimetal graphite/ZnO Schottky diodes and their use for hydrogen sensing.
    Carbon. Roč. 50, č. 10 (2012), s. 3928-3933. ISSN 0008-6223. E-ISSN 1873-3891
    R&D Projects: GA MŠMT(CZ) OC10021
    Institutional support: RVO:67985882
    Keywords : Schottky diodes * ZnO * Hydrogen sensor
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Impact factor: 5.868, year: 2012
    Permanent Link: http://hdl.handle.net/11104/0212439
    FileDownloadSizeCommentaryVersionAccess
    UFE 0382124.pdf9490.6 KBOtherrequire
     
     
  7. 7.
    0368785 - ÚFE 2012 RIV US eng J - Journal Article
    Černohorský, Ondřej - Žďánský, Karel - Zavadil, Jiří - Kacerovský, Pavel - Piksová, K.
    Palladium nanoparticles on InP for hydrogen detection.
    Nanoscale Research Letters. Roč. 6, č. 410 (2011), s. 4101-4104. ISSN 1931-7573. E-ISSN 1556-276X
    R&D Projects: GA AV ČR(CZ) KAN401220801; GA ČR GA102/09/1037
    Institutional research plan: CEZ:AV0Z20670512
    Keywords : palladium * indium phosphide
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Impact factor: 2.726, year: 2011
    Permanent Link: http://hdl.handle.net/11104/0203031
     
     
  8. 8.
    0368041 - ÚFE 2012 RIV GB eng J - Journal Article
    Yatskiv, Roman - Grym, Jan - Žďánský, Karel
    Particle detectors based on semiconducting InP epitaxial layers.
    Journal of Instrumentation. Roč. 6, C01072 (2011), C010721-C010725. ISSN 1748-0221. E-ISSN 1748-0221
    R&D Projects: GA AV ČR KJB200670901; GA MŠMT(CZ) OC10021; GA ČR(CZ) GP102/08/P617
    Institutional research plan: CEZ:AV0Z20670512
    Keywords : Solid state detectors * Gamma detectors * Radiation-hard detectors
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Impact factor: 1.869, year: 2011
    Permanent Link: http://hdl.handle.net/11104/0202512
    FileDownloadSizeCommentaryVersionAccess
    UFE 0368041.pdf1130 KBOtherrequire
     
     
  9. 9.
    0368040 - ÚFE 2012 RIV US eng J - Journal Article
    Žďánský, Karel
    Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles.
    Nanoscale Research Letters. Roč. 6, č. 490 (2011), s. 4901-49010. ISSN 1931-7573. E-ISSN 1556-276X
    R&D Projects: GA MŠMT(CZ) OC10021
    Institutional research plan: CEZ:AV0Z20670512
    Keywords : semiconductor devices * nanostructures * sensors
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Impact factor: 2.726, year: 2011
    Permanent Link: http://hdl.handle.net/11104/0202511
     
     
  10. 10.
    0350407 - ÚFE 2011 RIV CH eng J - Journal Article
    Matuchová, M. - Žďánský, Karel - Zavadil, Jiří
    Lead iodide crystals prepared under stoichiometric and nonstoichiometric conditions.
    Materials Science and Engineering B-Advanced Functional Solid-State Materials. Roč. 165, 1-2 (2010), s. 60-63. ISSN 0921-5107. E-ISSN 1873-4944.
    [9TH International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies. Lodz, 01.06.2010-04.06.2010]
    R&D Projects: GA ČR GC104/08/J025
    Institutional research plan: CEZ:AV0Z20670512
    Keywords : Semiconductors * Galvanomagnetic effects * Photoluminescence
    Subject RIV: CA - Inorganic Chemistry
    Impact factor: 1.568, year: 2010
    Permanent Link: http://hdl.handle.net/11104/0190422
     
     

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