Search results
- 1.0387843 - ÚFE 2013 RIV DE eng J - Journal Article
Šrobár, Fedor - Procházková, Olga
Nonlinear properties of the dipole layer in MOS-based hydrogen detectors.
Physica status solidi C. Roč. 9, č. 7 (2012), s. 1687-1689. E-ISSN 1610-1642
R&D Projects: GA ČR GA102/09/1037
Institutional support: RVO:67985882
Keywords : Chemical sensors * Interface phenomena * Semiconductor devices
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0220340 - 2.0387416 - ÚFE 2013 RIV RO eng J - Journal Article
Šrobár, Fedor - Procházková, Olga
Negative feedback phenomena in InP-based hydrogen detectors.
Optoelectronics and Advanced Materials - Rapid Communications. Roč. 6, 11-12 (2012), s. 1089-1091. ISSN 1842-6573. E-ISSN 2065-3824
R&D Projects: GA ČR GA102/09/1037
Institutional support: RVO:67985882
Keywords : Chemical sensors * Interface phenomena * Semiconductor devices
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 0.402, year: 2012
Permanent Link: http://hdl.handle.net/11104/0219915 - 3.0368043 - ÚFE 2012 RIV US eng J - Journal Article
Grym, Jan - Procházková, Olga - Yatskiv, Roman - Piksová, K.
Hydrogen sensors based on electrophoretically deposited Pd nanoparticles onto InP.
Nanoscale Research Letters. Roč. 6, č. 392 (2011), 3921-3925. ISSN 1931-7573. E-ISSN 1556-276X
R&D Projects: GA ČR GA102/09/1037; GA AV ČR KJB200670901
Institutional research plan: CEZ:AV0Z20670512
Keywords : nanoparticles * gas sensors * III-V semiconductors
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 2.726, year: 2011
Permanent Link: http://hdl.handle.net/11104/0202514File Download Size Commentary Version Access UFE 0368043.pdf 1 731.9 KB Other require - 4.0341490 - ÚFE 2011 RIV RO eng J - Journal Article
Procházková, Olga - Grym, Jan - Zavadil, Jiří - Žďánský, Karel - Lorinčík, Jan
Influence of Yb AND Yb2O3 addition on the properties of InP layers.
Journal of Optoelectronics and Advanced Materials. Roč. 10, č. 12 (2008), s. 3261-3264. ISSN 1454-4164. E-ISSN 1841-7132
R&D Projects: GA ČR GA102/06/0153; GA ČR(CZ) GP102/08/P617
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * rare earth elements * InP
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 0.577, year: 2008
Permanent Link: http://hdl.handle.net/11104/0005810 - 5.0341444 - ÚFE 2010 RIV CH eng J - Journal Article
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
LPE growth of InP layers from rare-earth treated melts for radiation detector structures.
Materials Science and Engineering B-Advanced Functional Solid-State Materials. Roč. 165, 1-2 (2009), s. 94-97. ISSN 0921-5107. E-ISSN 1873-4944
R&D Projects: GA ČR(CZ) GP102/08/P617; GA ČR GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor technology * rare earth elements * III-V semiconductors
Subject RIV: JJ - Other Materials
Impact factor: 1.715, year: 2009
Permanent Link: http://hdl.handle.net/11104/0184438 - 6.0341232 - ÚFE 2010 RIV DE eng J - Journal Article
Šrobár, Fedor - Procházková, Olga
Inversion of conductivity type of III-V compound layers in experiments with LPE growth from rare-earth containing melts.
Crystal Research and Technology. Roč. 44, č. 6 (2009), s. 597-602. ISSN 0232-1300. E-ISSN 1521-4079
R&D Projects: GA ČR GA102/09/1037; GA ČR GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductors
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.896, year: 2009
Permanent Link: http://hdl.handle.net/11104/0184282 - 7.0304148 - URE-Y 20030099 RIV DE eng J - Journal Article
Zavadil, Jiří - Žďánský, Karel - Pekárek, Ladislav - Procházková, Olga - Kacerovský, Pavel
High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements.
Physica Status Solidi C. Roč. 0, č. 3 (2003), s. 862-866. ISSN 1610-1634.
[EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./. Budapest, 26.05.2002-29.05.2002]
R&D Projects: GA AV ČR KSK1010104 Projekt 04/01:4043
Institutional research plan: CEZ:AV0Z2067918
Keywords : semiconductors * photoluminescence * galvanomagnetic effects
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0114289 - 8.0304106 - URE-Y 20030018 RIV DE eng J - Journal Article
Procházková, Olga - Zavadil, Jiří - Žďánský, Karel - Grym, Jan
Correlation of Pr, Dy and Tb addition with physical properties of InP layers prepared by LPE.
Physica Status Solidi C. Roč. 0, č. 3 (2003), s. 950-955. ISSN 1610-1634.
[EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./. Budapest, 26.05.2002-29.05.2002]
R&D Projects: GA AV ČR KSK1010104 Projekt 04/01:4043
Institutional research plan: CEZ:AV0Z2067918
Keywords : rare earth compounds * semiconductors * liqiud phase epitaxy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0114248 - 9.0303947 - URE-Y 20020080 RIV CH eng J - Journal Article
Žďánský, Karel - Procházková, Olga - Zavadil, Jiří - Novotný, Jan
P-type InP grown by LPE from melts with rare earth admixtures.
Materials Science and Engineering B-Advanced Functional Solid-State Materials. B91-92, - (2002), s. 38-42. ISSN 0921-5107. E-ISSN 1873-4944.
[DRIP /9./. Rimini, 24.09.2001-28.09.2001]
R&D Projects: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4074; GA AV ČR KSK1010104 Projekt 04/01:4044
Institutional research plan: CEZ:AV0Z2067918
Keywords : luminescence * rare earth compounds * Hall effect * semiconductor materials
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0114091 - 10.0303943 - URE-Y 20020081 RIV CH eng J - Journal Article
Procházková, Olga - Zavadil, Jiří - Žďánský, Karel - Grym, Jan
Preparation of InP-based semiconductor materials with low density of defects: effect of Nd, Tb and Yb addition.
Materials Science and Engineering B-Advanced Functional Solid-State Materials. B91/92, - (2002), s. 407-411. ISSN 0921-5107. E-ISSN 1873-4944.
[DRIP /9./. Rimini, 24.09.2001-28.09.2001]
R&D Projects: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4073
Institutional research plan: CEZ:AV0Z2067918
Keywords : liquid phase epitaxial growth * rare earth metals * semiconductor materials
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0114087