Search results
- 1.0304292 - URE-Y 20040021 ES eng A - Abstract
Matuchová, Marie - Procházková, Olga - Žďánský, Karel - Maixner, J.
Preparation of lead iodide as output material for x-ray detectors.
Badajoz: FORMATEX, 2003. Book of Abstracts 1st International Meeting on Applied Physics. s. 121
[APHYS-2003 /1./. 13.10.2003-18.10.2003, Badajoz]
R&D Projects: GA ČR GA102/03/0379; GA AV ČR KSK1010104 Projekt 04/01:4043; GA ČR GA102/01/1338
Institutional research plan: CEZ:AV0Z2067918
Keywords : lead compounds * zone melting * photoluminescence * electrical resistivity * rare earth metals
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0114393 - 2.0304201 - URE-Y 20030073 ES eng A - Abstract
Procházková, Olga - Zavadil, Jiří - Grym, Jan - Žďánský, Karel
Novel approaches to LPE preparation of high quality of InP semiconductor layers for radiation detectors.
Badajoz: FORMATEX, 2003. Book of Abstracts 1st International Meeting on Applied Physics. s. 201
[APHYS-2003 /1./. 13.10.2003-18.10.2003, Badajoz]
R&D Projects: GA ČR GA102/03/0379; GA AV ČR KSK1010104 Projekt 04/01:4043
Institutional research plan: CEZ:AV0Z2067918
Keywords : rare earth compounds * photoluminescence * Hall effect
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0114342 - 3.0304156 - URE-Y 20030050 PL eng A - Abstract
Šrobár, Fedor - Procházková, Olga
Feedback mechanism implicit in the LPE growth of semiconductor layers.
Warsaw: Zaklad Graficzny UW, 2003. XXXII International School on the Physics of Semiconducting Compounds Jaszowiec 2003. Program & Abstracts. s. 144
[International School on the Physics of Semiconducting Compounds Jaszowiec /32./. 30.05.2003-06.06.2003, Jaszowiec]
R&D Projects: GA ČR GA102/03/0379; GA AV ČR KSK1010104 Projekt 04/01:4043
Institutional research plan: CEZ:AV0Z2067918
Keywords : semiconductors * epitaxial growth
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0114297 - 4.0304080 - URE-Y 20020135 CZ eng A - Abstract
Grym, Jan - Procházková, Olga
Role of liquid phase epitaxy in preparation of semiconductor materials for radiation detectors.
Prague: Czech Technical University, 2002. Poster 2002. Book of Exteded Abstracts. s. PE13.1-PE13.2
[International Student Conference on Electrical Engineering Poster 2002 /6./. 23.05.2002-23.05.2002, Prague]
R&D Projects: GA AV ČR KSK1010104 Projekt 04/01:4043; GA MŠMT 300106513
Institutional research plan: CEZ:AV0Z2067918
Keywords : rare earth elements * liquid phase epitaxial growth * III-V semiconductors
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0114224 - 5.0304013 - URE-Y 20020082 HU eng A - Abstract
Procházková, Olga - Zavadil, Jiří - Žďánský, Karel - Grym, Jan
Correlation of Pr, Dy and Tb addition with physical properties of InP layers prepared by LPE.
Budapest: Rese, 2002. Book of Abstracts EXMATEC'2002. s. 149
[EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./. 26.05.2002-29.05.2002, Budapest]
R&D Projects: GA AV ČR KSK1010104 Projekt 04/01:4043
Institutional research plan: CEZ:AV0Z2067918
Keywords : rare earth compounds * semiconductors * liqiud phase epitaxy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0114157 - 6.0303985 - URE-Y 20020085 HU eng A - Abstract
Žďánský, Karel - Zavadil, Jiří - Pekárek, Ladislav - Procházková, Olga - Kacerovský, Pavel
High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements.
Budapest: Rese, 2002. Book of Abstracts EXMATEC'2002. s. 82-83
[EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./. 26.05.2002-29.05.2002, Budapest]
R&D Projects: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4074
Institutional research plan: CEZ:AV0Z2067918
Keywords : semiconductor materials * luminescence
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0114129 - 7.0303982 - URE-Y 20020008 PL eng A - Abstract
Grym, Jan - Procházková, Olga
Modification of propertis of InP-based semiconductor materials by REE.
Warsaw: Zaklad Graficzny UW, 2002. XXXI International School on the Physics of Semiconducting Compounds Jaszowiec 2002. Program & Abstracts. s. 63
[International School on the Physics of Semiconducting Compounds Jaszowiec /31./. 07.06.2002-14.06.2002, Jaszowiec]
R&D Projects: GA AV ČR KSK1010104 Projekt 04/01:4043
Institutional research plan: CEZ:AV0Z2067918
Keywords : semiconductor materials * rare earth elements * epitaxial growth * liquid phase epitaxial growth * III-V semiconductors
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0114126 - 8.0303870 - URE-Y 20010052 PL eng A - Abstract
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
The comparison of the influence of Pr, Nd and Tb on the characteristics of InP epitaxial layers.
Warsaw: Polish Academy of Sciences, Institute of Physics, 2001. Jaszowiec 2001. s. 59
[International School on the Physics of Semiconducting Compounds /30./. 01.06.2001-08.06.2001, Ustron-Jaszowiec]
R&D Projects: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4073
Institutional research plan: CEZ:AV0Z2067918
Keywords : liquid phase epitaxial growth * rare earth compounds * III-V semiconductors
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0114054 - 9.0303869 - URE-Y 20010050 CZ eng A - Abstract
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
Role of rare earth elements in growth process of InP LPE layers.
Prague: Czech Technical University, 2001. Poster 2001. Book of Extended Abstract. s. NS16.1-NS16.2
[International Student Conference on Electrical Engineering /5./. 24.05.2001, Prague]
R&D Projects: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4073
Institutional research plan: CEZ:AV0Z2067918
Keywords : liquid phase epitaxial growth * rare earth compounds * III-V semiconductors
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0114053 - 10.0303826 - URE-Y 20010040 SK eng A - Abstract
Zavadil, Jiří - Procházková, Olga - Žďánský, Karel
Growth of InP layers for radiation detectors.
[Bratislava]: [STU], 2001. ISBN 80-85330-90-3. DMS-RE 2001 Development of Materials Science in Research and Education. - (Koman, M.; Mikloš, D.). s. 94-95
[Development of Materials Science in Research and Education - DMS-RE 2001 /11./. 09.09.2001-13.09.2001, Kežmarské Žĺaby]
R&D Projects: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4074
Institutional research plan: CEZ:AV0Z2067918
Keywords : particle detectors * semiconductor materials * III-V semiconductors * photoluminescence
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0114010