Search results
- 1.0436000 - ÚFE 2015 RIV GB eng J - Journal Article
Lomov, A. A. - Punegov, V. I. - Nohavica, Dušan - Chuev, M.A. - Vasiliev, A.L. - Novikov, D. V.
High-resolution synchrotron diffraction study of porous buffer InP(001) layers.
Journal of Applied Crystallography. Roč. 47, č. 5 (2014), s. 1614-1625. ISSN 0021-8898. E-ISSN 1600-5767
Institutional support: RVO:67985882
Keywords : porous layers * X-ray reciprocal space mapping * indium phosphide
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 3.984, year: 2014
Permanent Link: http://hdl.handle.net/11104/0239828File Download Size Commentary Version Access UFE 0436000.pdf 1 897.7 KB Other require - 2.0396713 - ÚFE 2014 RIV FR eng J - Journal Article
Grym, Jan - Nohavica, Dušan - Gladkov, Petar - Hulicius, Eduard - Pangrác, Jiří - Piksová, K.
Epitaxial growth on porous GaAs substrates.
Comptes Rendus Chimie. Roč. 16, č. 1 (2013), s. 59-64. ISSN 1631-0748. E-ISSN 1878-1543
R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253
Institutional support: RVO:67985882 ; RVO:68378271
Keywords : Electrochemical etching * Porous semiconductors * Epitaxial growth * GaAs
Subject RIV: BH - Optics, Masers, Lasers; JA - Electronics ; Optoelectronics, Electrical Engineering (FZU-D)
Impact factor: 1.483, year: 2013
Permanent Link: http://hdl.handle.net/11104/0224448 - 3.0387856 - ÚFE 2013 RIV GB eng J - Journal Article
Nohavica, Dušan - Grym, Jan - Gladkov, Petar - Hulicius, Eduard - Pangrác, Jiří - Jarchovský, Zdeněk
Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs.
International Journal of Nanotechnology. Roč. 9, 8-9 (2012), s. 732-745. ISSN 1475-7435. E-ISSN 1741-8151
R&D Projects: GA ČR GAP108/10/0253
Institutional support: RVO:67985882 ; RVO:68378271
Keywords : growth * nanoporus
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering; BM - Solid Matter Physics ; Magnetism (FZU-D)
Impact factor: 1.087, year: 2012
Permanent Link: http://hdl.handle.net/11104/0216887 - 4.0387641 - ÚFE 2013 RIV DE eng J - Journal Article
Grym, Jan - Nohavica, Dušan - Vaniš, Jan - Piksová, K.
Preparation of nanoporous GaAs substrates for epitaxial growth.
Physica Status Solidi C. Roč. 9, č. 7 (2012), s. 1531-1533. ISSN 1862-6351.
[16th International Semiconducting and Insulating Materials Conference (SIMC-XVI). Stockholm, 19.06.2011-23.06.2011]
R&D Projects: GA ČR GAP108/10/0253
Institutional support: RVO:67985882
Keywords : semiconductor technology * porous semiconductors * epitaxial growth
Subject RIV: JJ - Other Materials
Permanent Link: http://hdl.handle.net/11104/0220314 - 5.0374725 - ÚFE 2012 RIV CZ cze J - Journal Article
Nohavica, Dušan
Toxicita a ekotoxicita nanomateriálů.
[Toxicity and ecotoxicity of nanomaterials.]
Jemná mechanika a optika. Roč. 61, 3-4 (2011), s. 220-227. ISSN 0447-6441
Institutional research plan: CEZ:AV0Z20670512
Keywords : nanoparticles * toxicity * nanotechnology
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0207573 - 6.0368042 - ÚFE 2012 RIV NL eng J - Journal Article
Nohavica, Dušan - Gladkov, Petar - Grym, Jan - Jarchovský, Zdeněk
Laser assisted electrochemical preparation of micro and nanopores in GaxIn1-xP.
Journal of Nanoparticle Research. Roč. 13, č. 11 (2011), s. 5873-5877. ISSN 1388-0764. E-ISSN 1572-896X
R&D Projects: GA ČR GAP108/10/0253
Institutional research plan: CEZ:AV0Z20670512
Keywords : Anodizace * GaInP * Nanopory
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 3.287, year: 2011
Permanent Link: http://hdl.handle.net/11104/0202513 - 7.0351779 - ÚFE 2011 RIV RU eng J - Journal Article
Lomov, A. A. - Punegov, V. I. - Vasil'ev, A. L. - Nohavica, Dušan - Gladkov, Petar - Kartsev, A. A. - Novikov, D. V.
X-ray diffraction analysis of multilayer porous InP(001) structure.
Crystallography Reports. Roč. 55, č. 2 (2010), s. 182-190. ISSN 1063-7745. E-ISSN 1562-689X
Institutional research plan: CEZ:AV0Z20670512
Keywords : silicon layers * INP
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 0.644, year: 2010
Permanent Link: http://hdl.handle.net/11104/0191457 - 8.0325803 - ÚFE 2010 RIV DE eng J - Journal Article
Nohavica, Dušan - Gladkov, Petar - Jarchovský, Zdeněk - Zelinka, Jiří - Komninou, Ph. - Delimitis, A. - Kehagias, Th. - Karakostas, Th.
Micropore modification in InP.
[Modifikace mikroporů v InP.]
Physica Status Solidi A. Roč. 205, č. 11 (2008), s. 2577-2580. ISSN 1862-6300. E-ISSN 1862-6319
Institutional research plan: CEZ:AV0Z20670512
Keywords : Porous semiconductors * semiconductors epitaxial layers
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 1.205, year: 2008
Permanent Link: http://hdl.handle.net/11104/0173102 - 9.0303686 - URE-Y 20000043 RIV CN eng J - Journal Article
Žďánský, Karel - Procházková, Olga - Nohavica, Dušan
Temperature dependence of electron Hall concetration in n-type InP and n-type In0.5Ga0.5P.
Science Foundation in China. Roč. 7, č. 2 (1999), s. 25-29
[Chinese-Czech Symposium Advanced Materials and Devices for Optoelectronics /2./. Beijing, 13.09.1999-14.09.1999]
R&D Projects: GA ČR GA102/99/0341
Grant - others:AV ČR(CZ) KSK1010601 Projekt 7/96/K:4074
Institutional research plan: CEZ:AV0Z2067918
Keywords : III-V semiconductors * Hall effect
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0113873 - 10.0303468 - URE-Y 990044 RIV NL eng J - Journal Article
Nohavica, Dušan - Gladkov, Petar - Žďánský, Karel - Pospíšil, S. (ed.) - Smith, K.M. (ed.) - Wilhelm, I. (ed.)
Preparation and properties of thick intentionally undopted GaInP/GaAs layers.
Nuclear Instruments & Methods in Physics Research Section A. Roč. 434, No 1 Special Issue (1999), s. 164-168. ISSN 0168-9002. E-ISSN 1872-9576.
[International Workshop on Gallium Arsenide and Related Compounds /6./. Prague, 22.06.1998-26.06.1998]
R&D Projects: GA AV ČR IAA1010807
Institutional research plan: CEZ:AV0Z2067918
Keywords : III-V semiconductors * photoluminescence * semiconductor doping
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.921, year: 1999
Permanent Link: http://hdl.handle.net/11104/0113683