Search results

  1. 1.
    0303196 - URE-Y 980010 RIV GB eng C - Conference Paper (international conference)
    Procházková, Olga - Novotný, Jan - Zavadil, Jiří - Žďánský, Karel - Kohout, Jindřich
    Preparation of InP and GaInAsP layers with low density of defects: effect of holmium and erbium gettering.
    Bristol: Institute of Physics, 1998. Institute of Physics Conference Series., 160. ISBN 0 7503 0500 2. In: Defect Recognition and Image Processing in Semiconductors 1997. - (Donecker, J.; Rechenberg, I.), s. 405-408
    [Defect Recognition and Image Processing in Semiconductors - DRIP /7./. Templin (DE), 07.09.1997-10.09.1997]
    R&D Projects: GA ČR GA102/96/1238
    Keywords : semiconductors * rare earth compounds * crystal defects * liquid phase epitaxial growth
    Subject RIV: CA - Inorganic Chemistry
    Permanent Link: http://hdl.handle.net/11104/0113442
     
     
  2. 2.
    0302709 - URE-Y 950027 SK eng C - Conference Paper (international conference)
    Procházková, Olga - Kohout, Jindřich - Starý, V.
    Preparation and Study of GaInAsP Layers by Liquid Phase Epitaxy in System Ga-In-As-P-Sb.
    Bratislava: STU, 1995. In: Zborník príspevkov ze 49. zjazdu chemických spoločností: Sekcie A,B., s. 377-378
    [Zjazd chemických spoločností - ZCHS'95 /49./. Bratislava (SK), 04.09.1995-07.09.1995]
    R&D Projects: GA ČR 102/93/0642
    Keywords : semiconductor technology * semiconductor epitaxial layers * semiconductor materials
    Permanent Link: http://hdl.handle.net/11104/0113055
     
     
  3. 3.
    0302617 - URE-Y 940037 CZ eng C - Conference Paper (international conference)
    Rosická, Vlasta - Kohout, Jindřich - Venkrbec, J. J. - Kousal, J. - Jedlička, T.
    X-ray study of GaInSb ternary solid solution (TSS) prepared by a new method.
    Praha: MAXDORF, 1994. ISBN 80-85800-21-7. In: DMS-RE'94 Development of Materials Science in Research and Education. Abstracts. - (Nitsch, K.; Rodová, M.), s. 36
    [Joint Seminar on Development of Materials in Research and Educations - DMS-RE'94 /4./. Dobřichovice (CZ), 19.09.1994-21.09.1994]
    R&D Projects: GA ČR 102/93/0642
    Keywords : X-ray diffraction * measurement * lattice constants
    Permanent Link: http://hdl.handle.net/11104/0112995
     
     
  4. 4.
    0302611 - URE-Y 940042 CZ eng C - Conference Paper (international conference)
    Starý, V. - Procházková, Olga - Jurek, Karel - Kohout, Jindřich
    Simultaneous measurement of composition and thickness of quaternarycompound films by EPMA.
    Brno: PCDIR, 1994. ISBN 80-85895-02-1. In: Nanometrology Scanning Probe Microscopy and Related Techniques. - (Tománek, P.; Spajer, M.), s. 80-83
    [NANO'94. Brno (CZ), 29.08.1994-30.08.1994]
    R&D Projects: GA ČR 102/93/0642
    Keywords : measurement * thin films
    Permanent Link: http://hdl.handle.net/11104/0112989
     
     
  5. 5.
    0302567 - URE-Y 940046 CZ eng C - Conference Paper (international conference)
    Karamazov, S. - Zelinka, Jiří - Kohout, Jindřich - Vaniš, J. - Berková, Daniela - Walachová, Jarmila
    Stability of home made STM head.
    Brno: PCDIR, 1994. ISBN 80-85595-02-1. In: Nanometrology Scanning Probe Microscopy and Related Techniques. - (Tománek, P.; Spajer, M.), s. 39-42
    [NANO'94. Brno (CZ), 29.08.1994-30.08.1994]
    R&D Projects: GA ČR 202/94/1056
    Keywords : microscopes * measurement
    Permanent Link: http://hdl.handle.net/11104/0112945
     
     
  6. 6.
    0302296 - URE-Y 920056 US eng C - Conference Paper (international conference)
    Venkrbec, J. J. - Čečil, Z. - Rosická, Vlasta - Kohout, Jindřich - Sedláček, J. - Kodejš, Z. - Pacák, P.
    Novel approaches to crystal growth of bulk ternary solid solutions.
    San Diego, 1992. In: ICCG-10. Tenth international conference on crystal growth. Oral presentation abstracts., s. 70
    [ICCG-10. San Diego (US), 16.08.1992-21.08.1992]
    Keywords : crystal growth * solid solutions * semiconductor materials
    Permanent Link: http://hdl.handle.net/11104/0112761
     
     
  7. 7.
    0302295 - URE-Y 920055 CS1 cze C - Conference Paper (international conference)
    Venkrbec, J. J. - Čečil, Z. - Rosická, Vlasta - Kohout, Jindřich - Knobloch, V. - Kodejš, Z. - Pacák, P.
    Nové metody růstu krystalů.
    Praha: Československá společnost pro růst krystalů, 1992. In: Rozvoj materiálových věd ve výzkumu a výuce. Celostátní seminář., s. 23
    [Rozvoj materiálových věd ve výzkumu a výuce. Dobřichovice (CS), 21.09.1992-23.09.1992]
    Keywords : crystal growth * solid solutions * semiconductor materials
    Permanent Link: http://hdl.handle.net/11104/0112760
     
     
  8. 8.
    0302254 - URE-Y 920014 CS1 eng C - Conference Paper (international conference)
    Venkrbec, J. J. - Čečil, Z. - Rosická, Vlasta - Kohout, Jindřich - Sedláček, J. - Kodejš, Z. - Pacák, P.
    Crystallization of "tunable" substrate OE materials.
    Praha: ČVUT, 1992. In: Workshop 92., s. 29-30
    [Workshop 92. Praha (CS), 20.01.1992-24.01.1992]
    Keywords : crystal growth * solid solutions * semiconductor materials
    Permanent Link: http://hdl.handle.net/11104/0112720
     
     
  9. 9.
    0302253 - URE-Y 920013 CS1 eng C - Conference Paper (international conference)
    Venkrbec, J. J. - Čečil, Z. - Rosická, Vlasta - Kohout, Jindřich - Sedláček, J. - Kodejš, Z. - Pacák, P.
    A new way to the growth of optoelectronic substrates.
    Praha: Union of Czechoslovak Mathematicians and Physicists, 1992. ISBN 80-7015-336-9. In: 12.th general conference of the condensed matter division of the E.P.S. Europhysics conference abstracts. - (Bethge, K.), s. 282
    [General Conference of The Condensed Matter Division of the E.P.S. /12./. Praha (CS), 06.04.1992-09.04.1992]
    Keywords : crystal growth * solid solutions * semiconductor materials
    Permanent Link: http://hdl.handle.net/11104/0112719
     
     
  10. 10.
    0302138 - URE-Y 910025 CS1 cze C - Conference Paper (international conference)
    Venkrbec, J. J. - Čečil, Z. - Rosická, Vlasta - Kohout, Jindřich - Kodejš, Z. - Pacák, P. - Sedláček, J.
    Příprava objemového krystalu GaxIn1-xSb metodou CAM-S.
    Gabčíkovo: Odborná skupina chémie a fyziky tuhých látok, 1991. In: Rozvoj materiálových vied vo výskume a výuke., s. 151
    [Rozvoj materiálových vied vo výskume a výuke. Gabčíkovo (CS), 04.09.1991-06.09.1991]
    Keywords : crystal growth from melt * crystal structure * crystal microstructure * semiconductor growth
    Permanent Link: http://hdl.handle.net/11104/0112634
     
     

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