Search results
- 1.0303061 - URE-Y 970071 DE eng A - Abstract
Procházková, Olga - Novotný, Jan - Zavadil, Jiří - Žďánský, Karel - Kohout, Jindřich
Preparation of InP and GaInAsP layers with very low density of defects: effect of holmium and erbium gettering.
[Berlin]: [Institute of Crystal Growth], 1997. DRIP VII. s. 7.8
[Defect Recognition and Image Processing in Semiconductors - DRIP /7./. 07.09.1997-10.09.1997, Templin]
R&D Projects: GA ČR 102/96/1238
Keywords : semiconductors * rare earth elements * crystal defects * liquid phase epitaxial growth
Permanent Link: http://hdl.handle.net/11104/0113349 - 2.0303060 - URE-Y 970070 SK eng A - Abstract
Procházková, Olga - Novotný, Jan - Zavadil, Jiří - Kohout, Jindřich - Žďánský, Karel
InP and GaInAsP layers with low density of defects: effect of holmium and erbium admixture.
Bratislava: [STU], 1997. Development of Materials Science in Research and Education. Book of abstracts. - (Barančok, D.; Vajda, J.). s. 34
[Development of Materials Science in Research and Education - DMS-RE 1997 /7./. 09.06.1997-11.06.1997, Kočovce]
R&D Projects: GA ČR 102/96/1238
Keywords : semiconductors * rare earth elements * crystal defects
Permanent Link: http://hdl.handle.net/11104/0113348