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- 1.0477154 - FZÚ 2018 RIV US eng C - Conference Paper (international conference)
Hospodková, Alice - Pangrác, Jiří - Kuldová, Karla - Nikl, Martin - Pacherová, Oliva - Oswald, Jiří - Hubáček, Tomáš - Zíková, Markéta - Brůža, P. - Pánek, D. - Blažek, K. - Ledoux, G. - Dujardin, C. - Heuken, M. - Hulicius, Eduard
Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications.
Fourth Conference on Sensors, MEMS, and Electro-Optic Systems. Bellingham: SPIE, 2017 - (du Plessis, M.), s. 1-15, č. článku 1003617. Proceedings of SPIE, 10036. ISBN 978-151060513-8. ISSN 0277-786X.
[South African Conference on Sensors, MEMS and Electro-Optical Systems (SMEOS) /4./. Skukuza (ZA), 18.09.2016-20.09.2016]
R&D Projects: GA MŠMT LM2015087; GA MŠMT LO1603; GA ČR GA16-15569S
EU Projects: European Commission(XE) CZ.2.16/3.1.00/24510; European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : gallium nitride * indium gallium nitride * quantum wells * scintillators * sensors * luminescence * excitons * scintillation * radiation * resistance
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0273529File Download Size Commentary Version Access 0477154.pdf 6 459.7 KB Other open-access - 2.0437411 - ÚFE 2015 RIV US eng C - Conference Paper (international conference)
Grym, Jan - Gladkov, Petar - Vaniš, Jan - Hulicius, Eduard - Pangrác, Jiří - Pacherová, Oliva - Dimitrakopulos, G.P. - Bazioti, C. - Komninou, Ph.
Lattice-mismatched epitaxial growth on porous III-V substrates.
ECS Transactions. Vol. 58. Pennington: Electrochemical Society, 2013, s. 53-60. ISSN 1938-5862.
[224th ECS Meeting. San Francisco (US), 27.10.2013-28.10.2013]
Institutional support: RVO:67985882 ; RVO:68378271
Keywords : Epitaxial growth * Gallium alloys * Metallorganic vapor phase epitaxy
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering; BM - Solid Matter Physics ; Magnetism (FZU-D)
Permanent Link: http://hdl.handle.net/11104/0241026 - 3.0396817 - ÚFE 2014 RIV US eng C - Conference Paper (international conference)
Grym, Jan - Nohavica, Dušan - Gladkov, Petar - Vaniš, Jan - Hulicius, Eduard - Pangrác, Jiří - Pacherová, Oliva - Piksová, K.
Strain accommodation within porous buffer layers in heteroepitaxial growth.
ASDAM 2012 - Conference Proceedings: The 9th International Conference on Advanced Semiconductor Devices and Microsystems. New York: IEEE, 2012 - (Hascik, S.; Osvald, J.), s. 235-238. ISBN 978-1-4673-1197-7.
[9th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM). Smolenice Castle (SK), 11.11.2012-15.11.2012]
R&D Projects: GA MŠMT 7AMB12GR034; GA ČR GAP108/10/0253
Institutional support: RVO:67985882 ; RVO:68378271
Keywords : Epitaxial growth * Gaas * Porous substrates
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering; JA - Electronics ; Optoelectronics, Electrical Engineering (FZU-D)
Permanent Link: http://hdl.handle.net/11104/0224518 - 4.0132631 - FZU-D 990052 RIV CZ eng C - Conference Paper (international conference)
Krouský, Eduard - Renner, Oldřich - Mašek, Karel - Pfeifer, Miroslav - Pacherová, Oliva - Králiková, Božena - Skála, Jiří
Macroscopic parameters in double-pulse-smoothed plasma.
80-01-01641-2. In: 18th Symposuim on Plasma Physics and Technology. Praha: ČVUT, 1997 - (Píchal, J.), s. 93-97. Proceedings SPPT 1997.
[Symposium on Plasma Physics and Technology /18./. Praha (CZ), 17.06.1997-20.06.1997]
R&D Projects: GA ČR GA202/97/1186; GA ČR GA202/96/1688
Subject RIV: BL - Plasma and Gas Discharge Physics
Permanent Link: http://hdl.handle.net/11104/0030642 - 5.0132607 - FZU-D 990053 RIV CZ eng C - Conference Paper (international conference)
Renner, Oldřich - Krouský, Eduard - Pacherová, Oliva - Pfeifer, Miroslav - Missalla, T. - Förster, E.
Spatially resolved x-ray spectroscopy of high-temperature plasma.
80-01-01344-8. In: 17th Symposium on Plasma Physics and Technology. Praha: ČVUT, 1995 - (Píchal, J.), s. 131-134. Proceedings SPPT 1995.
[Symposium on plasma physics and technology /17./. Praha (CZ), 13.06.1995-16.06.1995]
R&D Projects: GA ČR GA202/93/1023; GA AV ČR IAA110427
Grant - others:Human CApital and Mobility program(XE) CHRXCT930377
Subject RIV: BL - Plasma and Gas Discharge Physics
Permanent Link: http://hdl.handle.net/11104/0030621 - 6.0026669 - FZÚ 2006 RIV CZ eng C - Conference Paper (international conference)
Hulicius, Eduard - Pacherová, Oliva - Oswald, Jiří - Hospodková, Alice - Pangrác, Jiří - Šimeček, Tomislav - Melichar, Karel - Petříček, Otto - Chráska, T. - Holý, V. - Vávra, I. - Ouattara, L.
Abrupt InAs/GaAs heterojunctions and very thin quantum wells grown by MOVPE.
[Strmé InAs/GaAs heteropřechody a velmi tenké kvantové jámy vypěstované pomocí MOVPE.]
NANO ´04. Brno: Brno University of Technology, 2004 - (Šandera, P.), s. 278-281. ISBN 80-214-2793-0.
[NANO ´04 International Conference. Brno (CZ), 13.10.2004-15.10.2004]
R&D Projects: GA ČR(CZ) GP202/02/D069; GA ČR(CZ) GA202/03/0413; GA AV ČR(CZ) IAA1010318; GA AV ČR(CZ) KSK1010104
Institutional research plan: CEZ:AV0Z1010914
Keywords : semiconductor laser * quantum well * GaAs * InAs * XSTM * TEM * X-ray diffraction
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0116879