Search results
- 1.0521523 - FZÚ 2020 RIV eng P - Patent Document
Hospodková, Alice - Blažek, K. - Hulicius, Eduard - Touš, Jan - Nikl, Martin
Scintillation detector for detection of ionising radiation.
2018. Owner: Fyzikální ústav AV ČR, v. v. i. - CRYTUR SPOL. S R.O. Date of the patent acceptance: 04.09.2018. Patent Number: US10067246
R&D Projects: GA TA ČR TH02010580
Institutional support: RVO:68378271
Keywords : scintillation * detector * GaN * quantum well
OECD category: Electrical and electronic engineering
http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=10067246.PN.&OS=PN/10067246&RS=PN/10067246
Permanent Link: http://hdl.handle.net/11104/0306122 - 2.0520194 - FZÚ 2020 RIV cze P - Patent Document
Hospodková, Alice - Zíková, Markéta - Blažek, K.
Scintilační detektor pro detekci ionizujícího záření.
[Scintillation detector for the detection of ionizing radiation.]
2019. Owner: Fyzikální ústav AV ČR, v. v. i. Date of the patent acceptance: 06.02.2019. Patent Number: 307721
R&D Projects: GA TA ČR TH02010580
Institutional support: RVO:68378271
Keywords : InGaN/GaN heterostructure * scintillators * detectors
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://isdv.upv.cz/doc/FullFiles/Patents/FullDocuments/307/307721.pdf
Permanent Link: http://hdl.handle.net/11104/0304880 - 3.0520192 - FZÚ 2020 RIV cze P - Patent Document
Hospodková, Alice - Zíková, Markéta
Vícevrstvá polovodičová struktura pro fotoelektrická zařízení.
[Multilayer semiconductor structure for photoelectric devices.]
2019. Owner: Fyzikální ústav AV ČR, v. v. i. Date of the patent acceptance: 25.07.2019. Patent Number: 307941
R&D Projects: GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : quantum dots * InAs * GaAsSb
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://isdv.upv.cz/doc/FullFiles/Patents/FullDocuments/307/307941.pdf
Permanent Link: http://hdl.handle.net/11104/0304875 - 4.0519848 - FZÚ 2020 RIV cze P - Patent Document
Hospodková, Alice - Dominec, Filip
Epitaxní vícevrstvá struktura pro tranzistory s vysokou pohyblivostí elektronů na bázi GaN a tranzistor obsahující tuto strukturu.
[Epitaxial multilayer structure for GaN-based high electron mobility transistors and a transistor containing this structure.]
2019. Owner: Fyzikální ústav AV ČR, v. v. i. Date of the patent acceptance: 25.07.2019. Patent Number: 307942
R&D Projects: GA TA ČR TH02010014
Institutional support: RVO:68378271
Keywords : HEMT * GaN * AlGaN
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://isdv.upv.cz/doc/FullFiles/Patents/FullDocuments/307/307942.pdf
Permanent Link: http://hdl.handle.net/11104/0304832 - 5.0519846 - FZÚ 2020 RIV cze P - Patent Document
Hospodková, Alice - Hubáček, Tomáš
Způsob výroby epitaxní struktury s InGaN kvantovými jamami.
[Method of producing an epitaxial structure with InGaN quantum wells.]
2019. Owner: Fyzikální ústav AV ČR, v. v. i. Date of the patent acceptance: 18.09.2019. Patent Number: 308024
R&D Projects: GA TA ČR TH02010580
Institutional support: RVO:68378271
Keywords : InGaN/GaN heterostructure * scintillators * detectors
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://isdv.upv.cz/doc/FullFiles/Patents/FullDocuments/308/308024.pdf
Permanent Link: http://hdl.handle.net/11104/0304831 - 6.0470001 - FZÚ 2017 RIV cze P - Patent Document
Hospodková, Alice - Blažek, K. - Hulicius, Eduard - Touš, Jan - Nikl, Martin
Scintilační detektor pro detekci ionizujícího záření.
[Scintillation detector for detecting ionizing radiation.]
2016. Owner: Fyzikální ústav AV ČR, v. v. i - CRYTUR, spol.s r.o. Date of the patent acceptance: 18.05.2016. Patent Number: 306026
Institutional support: RVO:68378271
Keywords : InGaN/GaN heterostructure * scintillators
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://isdv.upv.cz/doc/FullFiles/Patents/FullDocuments/306/306026.pdf
Permanent Link: http://hdl.handle.net/11104/0267745 - 7.0429421 - FZÚ 2015 RIV cze P - Patent Document
Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří
GaAsSb vrstva s gradovaným složením redukující pnutí v InAs/GaAs kvantových tečkách.
[Gallium arsenide antimonite layer with graded composition for reducing strain in indium arsenide/gallium arsenide quantum dots.]
2013. Owner: Fyzikální ústav AV ČR, v. v. i. Date of the patent acceptance: 17.04.2013. Patent Number: 303855
Institutional support: RVO:68378271
Keywords : quantum dots * InAs * GaAs * GaAsSb * strain reducing layer
Subject RIV: BH - Optics, Masers, Lasers
http://isdv.upv.cz/portal/pls/portal/portlets.pts.det?xprim=1715180&lan=cs
Permanent Link: http://hdl.handle.net/11104/0234536