Search results

  1. 1.
    0304224 - URE-Y 20030132 RIV RO eng J - Journal Article
    Ožvoldová, M. - Trnovcová, V. - Kadlečíková, M. - Škubla, A. - Greguš, J. - Zavadil, Jiří - Ležal, Dimitrij
    Absorption, photoluminescence and Raman spectra of some sulfide and telluride/halide glasses.
    Journal of Optoelectronics and Advanced Materials. Roč. 5, č. 5 (2003), s. 1093-1100. ISSN 1454-4164. E-ISSN 1841-7132.
    [International Edition of Romanian Conference on Advanced Materials /4./. Constanta, 15.09.2003-18.09.2003]
    R&D Projects: GA ČR GA104/02/0799; GA AV ČR KSK1010104 Projekt 04/01:4044
    Grant - others:VEGA(SK) 1/7629/02; VEGA(SK) 1/8309/01
    Institutional research plan: CEZ:AV0Z2067918
    Keywords : chalcogenide glasses * photoluminescence * Raman spectra * rare earth metals
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 0.996, year: 2003
    Permanent Link: http://hdl.handle.net/11104/0003149
     
     
  2. 2.
    0304222 - URE-Y 20030126 RIV DE eng J - Journal Article
    Žďánský, Karel - Hlídek, P. - Pekárek, Ladislav
    Behaviour of manganese in InP compared with other impurities of 3d transition metals.
    Physica Status Solidi A. Roč. 195, č. 1 (2003), s. 74-80. ISSN 0031-8965.
    [EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./. Budapest, 26.05.2002-29.05.2002]
    R&D Projects: GA AV ČR IBS2067354; GA AV ČR KSK1010104 Projekt 04/01:4044
    Institutional research plan: CEZ:AV0Z2067918
    Keywords : deep levels * semiconductor growth * Hall effect
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Impact factor: 0.950, year: 2003
    Permanent Link: http://hdl.handle.net/11104/0114363
     
     
  3. 3.
    0304152 - URE-Y 20030025 RIV GB eng J - Journal Article
    Žďánský, Karel - Pekárek, Ladislav - Hlídek, P.
    Pure and intentionally doped indium phosphide wafers treated by long time annealing at high temperatures.
    Semiconductor Science and Technology. Roč. 18, č. 11 (2003), s. 938-944. ISSN 0268-1242. E-ISSN 1361-6641
    R&D Projects: GA AV ČR IBS2067354; GA AV ČR KSK1010104 Projekt 04/01:4044
    Institutional research plan: CEZ:MSM 113200002
    Keywords : deep levels * light absorption * Hall effect
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Impact factor: 1.603, year: 2003
    Permanent Link: http://hdl.handle.net/11104/0114293
     
     
  4. 4.
    0304124 - URE-Y 20030020 RIV NL eng J - Journal Article
    Horvath, Zs. J. - Rakovics, V. - Szentpáli, B. - Püspöki, S. - Žďánský, Karel
    InP Schotky junctions for zero bias detector diodes.
    Vacuum. Roč. 71, 1/2 (2003), s. 113-116. ISSN 0042-207X. E-ISSN 1879-2715.
    [Joint Vacuum Conference JVC /9./. Schloss Seggau, Leibnitz by Graz, 16.06.2002-20.06.2002]
    R&D Projects: GA AV ČR KSK1010104 Projekt 04/01:4044
    Grant - others:OTKA(HU) T035272
    Institutional research plan: CEZ:AV0Z2067918
    Keywords : Schottky barriers * semiconductor technology
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 0.612, year: 2003
    Permanent Link: http://hdl.handle.net/11104/0114265
     
     
  5. 5.
    0303947 - URE-Y 20020080 RIV CH eng J - Journal Article
    Žďánský, Karel - Procházková, Olga - Zavadil, Jiří - Novotný, Jan
    P-type InP grown by LPE from melts with rare earth admixtures.
    Materials Science and Engineering B-Advanced Functional Solid-State Materials. B91-92, - (2002), s. 38-42. ISSN 0921-5107. E-ISSN 1873-4944.
    [DRIP /9./. Rimini, 24.09.2001-28.09.2001]
    R&D Projects: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4074; GA AV ČR KSK1010104 Projekt 04/01:4044
    Institutional research plan: CEZ:AV0Z2067918
    Keywords : luminescence * rare earth compounds * Hall effect * semiconductor materials
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Permanent Link: http://hdl.handle.net/11104/0114091
     
     


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