Search results
- 1.0304224 - URE-Y 20030132 RIV RO eng J - Journal Article
Ožvoldová, M. - Trnovcová, V. - Kadlečíková, M. - Škubla, A. - Greguš, J. - Zavadil, Jiří - Ležal, Dimitrij
Absorption, photoluminescence and Raman spectra of some sulfide and telluride/halide glasses.
Journal of Optoelectronics and Advanced Materials. Roč. 5, č. 5 (2003), s. 1093-1100. ISSN 1454-4164. E-ISSN 1841-7132.
[International Edition of Romanian Conference on Advanced Materials /4./. Constanta, 15.09.2003-18.09.2003]
R&D Projects: GA ČR GA104/02/0799; GA AV ČR KSK1010104 Projekt 04/01:4044
Grant - others:VEGA(SK) 1/7629/02; VEGA(SK) 1/8309/01
Institutional research plan: CEZ:AV0Z2067918
Keywords : chalcogenide glasses * photoluminescence * Raman spectra * rare earth metals
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.996, year: 2003
Permanent Link: http://hdl.handle.net/11104/0003149 - 2.0304222 - URE-Y 20030126 RIV DE eng J - Journal Article
Žďánský, Karel - Hlídek, P. - Pekárek, Ladislav
Behaviour of manganese in InP compared with other impurities of 3d transition metals.
Physica Status Solidi A. Roč. 195, č. 1 (2003), s. 74-80. ISSN 0031-8965.
[EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./. Budapest, 26.05.2002-29.05.2002]
R&D Projects: GA AV ČR IBS2067354; GA AV ČR KSK1010104 Projekt 04/01:4044
Institutional research plan: CEZ:AV0Z2067918
Keywords : deep levels * semiconductor growth * Hall effect
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 0.950, year: 2003
Permanent Link: http://hdl.handle.net/11104/0114363 - 3.0304152 - URE-Y 20030025 RIV GB eng J - Journal Article
Žďánský, Karel - Pekárek, Ladislav - Hlídek, P.
Pure and intentionally doped indium phosphide wafers treated by long time annealing at high temperatures.
Semiconductor Science and Technology. Roč. 18, č. 11 (2003), s. 938-944. ISSN 0268-1242. E-ISSN 1361-6641
R&D Projects: GA AV ČR IBS2067354; GA AV ČR KSK1010104 Projekt 04/01:4044
Institutional research plan: CEZ:MSM 113200002
Keywords : deep levels * light absorption * Hall effect
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 1.603, year: 2003
Permanent Link: http://hdl.handle.net/11104/0114293 - 4.0304124 - URE-Y 20030020 RIV NL eng J - Journal Article
Horvath, Zs. J. - Rakovics, V. - Szentpáli, B. - Püspöki, S. - Žďánský, Karel
InP Schotky junctions for zero bias detector diodes.
Vacuum. Roč. 71, 1/2 (2003), s. 113-116. ISSN 0042-207X. E-ISSN 1879-2715.
[Joint Vacuum Conference JVC /9./. Schloss Seggau, Leibnitz by Graz, 16.06.2002-20.06.2002]
R&D Projects: GA AV ČR KSK1010104 Projekt 04/01:4044
Grant - others:OTKA(HU) T035272
Institutional research plan: CEZ:AV0Z2067918
Keywords : Schottky barriers * semiconductor technology
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.612, year: 2003
Permanent Link: http://hdl.handle.net/11104/0114265 - 5.0303947 - URE-Y 20020080 RIV CH eng J - Journal Article
Žďánský, Karel - Procházková, Olga - Zavadil, Jiří - Novotný, Jan
P-type InP grown by LPE from melts with rare earth admixtures.
Materials Science and Engineering B-Advanced Functional Solid-State Materials. B91-92, - (2002), s. 38-42. ISSN 0921-5107. E-ISSN 1873-4944.
[DRIP /9./. Rimini, 24.09.2001-28.09.2001]
R&D Projects: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4074; GA AV ČR KSK1010104 Projekt 04/01:4044
Institutional research plan: CEZ:AV0Z2067918
Keywords : luminescence * rare earth compounds * Hall effect * semiconductor materials
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0114091