Search results
- 1.0304202 - URE-Y 20030098 ES eng A - Abstract
Pedlíková, Jitka - Ležal, Dmitrij - Zavadil, Jiří - Kalužný, J.
Preparation and characterisation of ZnO-TeO2 based glass materials.
Badajoz: FORMATEX, 2003. Book of Abstracts 1st International Meeting on Applied Physics. s. 753
[APHYS-2003 /1./. 13.10.2003-18.10.2003, Badajoz]
R&D Projects: GA ČR GA104/02/0799; GA AV ČR KSK1010104 Projekt 04/01:4044
Institutional research plan: CEZ:AV0Z2067918
Keywords : glass * fluorescence * transmission
Subject RIV: CA - Inorganic Chemistry
Permanent Link: http://hdl.handle.net/11104/0114343 - 2.0304070 - URE-Y 20020114 AT eng A - Abstract
Horvath, Zs. J. - Rakovics, V. - Szentpáli, B. - Püspöki, S. - Žďánský, Karel
InP Schotky junctions for zero bias detector diodes.
Graz: University of Technology, 2002. Abstracts JVC-9. s. -
[Joint Vacuum Conference JVC /9./. 16.06.2002-20.06.2002, Schloss Seggau, Leibnitz by Graz]
R&D Projects: GA AV ČR KSK1010104 Projekt 04/01:4044
Institutional research plan: CEZ:AV0Z2067918
Keywords : Schottky barriers * semiconductor technology
Subject RIV: BM - Solid Matter Physics ; Magnetism
http://www.jvc9.tugraz.at/pm11.htm
Permanent Link: http://hdl.handle.net/11104/0114214 - 3.0304059 - URE-Y 20020096 HU eng A - Abstract
Žďánský, Karel - Hlídek, P. - Pekárek, Ladislav
Behaviour of manganese in InP in comparison with other impurities of 3d transition metals.
Budapest: Rese, 2002. Book of Abstracts EXMATEC'2002. s. 126-127
[EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./. 26.05.2002-29.05.2002, Budapest]
R&D Projects: GA ČR GA106/99/1563; GA AV ČR KSK1010104 Projekt 04/01:4044
Institutional research plan: CEZ:AV0Z2067918
Keywords : deep levels * semiconductor growth * Hall effect
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0114203 - 4.0303823 - URE-Y 20010058 IT eng A - Abstract
Žďánský, Karel - Procházková, Olga - Zavadil, Jiří - Novotný, Jan
P-type InP grown by LPE from melts with rare earth admixtures.
[Parma]: [Instituto CNRMASPEC], 2001. DRIP IX - 9th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors. Program and abstracts. s. 36
[DRIP /9./. 24.09.2001-28.09.2001, Rimini]
R&D Projects: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4074; GA AV ČR KSK1010104 Projekt 04/01:4044
Institutional research plan: CEZ:AV0Z2067918
Keywords : liquid phase epitaxial growth * rare earth metals * semiconductor materials
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0114007