Search results
- 1.0569418 - FZÚ 2023 RIV FR eng C - Conference Paper (international conference)
Bulgakova, Nadezhda M. - Volodin, V.A. - Cheng, Y. - Levy, Yoann - Beránek, Jiří - Nagisetty, Siva S. - Zukerstein, Martin - Popov, A. A. - Bulgakov, Alexander
Selective ultrashort laser annealing of amorphous Ge/Si multilayer stacks.
EPJ Web of Conferences. Vol. 266. Les Ulis: EDP Science, 2022, č. článku 06012. E-ISSN 2100-014X.
[EOS Annual Meeting (EOSAM 2022). Porto (PT), 12.09.2022-16.09.2022]
Institutional support: RVO:68378271
Keywords : laser crystallization * femtosecond and picosecomd laser * Raman scattering technique
OECD category: Optics (including laser optics and quantum optics)
https://www.epj-conferences.org/articles/epjconf/pdf/2022/10/epjconf_eosam2022_06012.pdf
Permanent Link: https://hdl.handle.net/11104/0340742 - 2.0556457 - FZÚ 2023 RIV US eng C - Conference Paper (international conference)
Volodin, V.A. - Krivyakin, G.K. - Bulgakov, Alexander - Levy, Yoann - Beránek, Jiří - Nagisetty, Siva S. - Bryknar, Z. - Bulgakova, Nadezhda M. - Geydt, P.V. - Popov, A. A.
Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications.
Proceedings of SPIE - The International Society for Optical Engineering. Bellingham: SPIE, 2022 - (Lukichev, V.; Rudenko, K.), č. článku 1215702. 12157. ISSN 0277-786X.
[International Conference on Micro- and Nano-Electronics /14./. Zvenigorod (RU), 04.10.2021-08.10.2021]
R&D Projects: GA MŠMT EF15_003/0000445; GA MŠMT EF15_006/0000674; GA MŠMT LO1602
Grant - others:OP VVV - BIATRI(XE) CZ.02.1.01/0.0/0.0/15_003/0000445; OP VVV - HiLASE-CoE(XE) CZ.02.1.01/0.0/0.0/15_006/0000674
Institutional support: RVO:68378271
Keywords : Ge/Si multi-nanolayers * picosecond infrared pulsed laser annealing * Raman spectroscopy * nonlinear efffects in light absorption
OECD category: Optics (including laser optics and quantum optics)
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/12157/2622731/Picosecond-infrared-laser-crystallization-of-Ge-layers-in-Ge-Si/10.1117/12.2622731.short
Permanent Link: http://hdl.handle.net/11104/0330692