0094565 - FZÚ 2008 RIV US eng J - Journal Article
Jungwirth, Tomáš - Sinova, J. - MacDonald, A. H. - Gallagher, B. L. - Novák, Vít - Edmonds, K. W. - Rushforth, A.W. - Campion, R. P. - Foxon, C. T. - Eaves, L. - Olejník, Kamil - Mašek, Jan - Yang, E. S. R. - Wunderlich, J. - Gould, C. - Molenkamp, L. W. - Dietl, T. - Ohno, H.Character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover.
[Charakter stavů v okolí Fermiho meze v GaMnAs: přechod mezi nečistotovým a valenčním pásmem.]
Physical Review. B. Roč. 76, č. 12 (2007), 125206/1-125206/8. ISSN 1098-0121
R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/04/1519; GA AV ČR KAN400100652; GA MŠMT LC510; GA ČR GEFON/06/E001; GA ČR GEFON/06/E002
EU Projects: European Commission(XE) 015728 - NANOSPIN
Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z10100521
Keywords : ferromagnetic semiconductors, * metal-insulator transition
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.172, year: 2007
Permanent Link: http://hdl.handle.net/11104/0154336
