0105871 - URE-Y 20040036 RIV DE eng C - Conference Paper (international conference)
Vaniš, Jan - Chow, D. H. - Pangrác, Jiří - Šroubek, Filip - McGill, T. C. M. - Walachová, Jarmila
Characterization of InAs/AlSb tunneling double barrier heterostructure by ballistic electron emission microscope with InAs as based electrode.
[Charakterizace dvojité tunelové bariérové InAs/AlSb heterostruktury pomocí balistické elektronové emisní mikroskopie s bázovou InAs elektrodou.]
Proceedings 6th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies - EXMATEC'2002. Weinheim: WileyVCH Verlag, 2003 - (Stutzmann, M.), s. 986-991. Physica Status Solidi, Conferences, 0.3.2003. ISBN 3-527-40436-8.
[EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./. Budapest (HU), 26.05.2002-29.05.2002]
R&D Projects: GA AV ČR(CZ) KSK1010104
Keywords : field emission electron microscopy * semiconductor quantum wells * spectroscopy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0013059