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- 1.0105892 - URE-Y 20040171 FR eng A - Abstract
Vaniš, Jan - Chow, D. H. - Šroubek, Filip - McGill, T. C. M. - Walachová, Jarmila
Characterization of InAs/AlSb tunneling double barrier heterostructure by reverse ballistic electron emission spectroscoipy with InAs as base electrode.
7th International Workshop on Expert Evaluation & Control of Compound Semiconductor Materials & Technologies - EXMATEC'2004. [Montpellier]: [GES], 2004. s. 164.
[EXMATEC 2004 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /7./. 01.06.2004-04.06.2004, Montpellier]
R&D Projects: GA AV ČR(CZ) KSK1010104
Keywords : scanning tunelling microscopy * ballistic transport * semiconductor heterojunctions
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0013080