Search results
- 1.0304105 - URE-Y 20030017 RIV DE eng J - Journal Article
Vaniš, Jan - Chow, D. H. - Pangrác, Jiří - Šroubek, Filip - McGill, T. C. - Walachová, Jarmila
Characterization of InAs/AlSb tunneling double barrier heterostructure by ballistic electron emission microscope with InAs as based electrode.
Physica Status Solidi C. Roč. 0, č. 3 (2003), s. 986-991. ISSN 1610-1634.
[EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./. Budapest, 26.05.2002-29.05.2002]
R&D Projects: GA AV ČR KSK1010104 Projekt 04/01:4045
Institutional research plan: CEZ:AV0Z2067918
Keywords : field emission electron microscopy * semiconductor quantum wells * spectroscopy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0114247 - 2.0303403 - URE-Y 990025 RIV US eng J - Journal Article
Walachová, Jarmila - Zelinka, Jiří - Vaniš, Jan - Karamazov, Simeon - Cukr, Miroslav - Zich, P. - Chow, D. H. - McGill, T. C.
Testing of resonant tunneling double barrier heterostructures by BEEM/BEES.
Czechoslovak Journal of Physics. Roč. 49, č. 5 (1999), s. 833-836. ISSN 0011-4626.
[Czech-Chinese Workshop on Advanced Materials for Optoelectronics - AMFO'98. Prague, 15.06.1998-17.06.1998]
R&D Projects: GA ČR GA102/97/0427
Institutional research plan: CEZ:AV0Z2067918
Keywords : nanostructured materials * spectroscopy * semiconductor quantum wells
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 0.328, year: 1999
Permanent Link: http://hdl.handle.net/11104/0003134 - 3.0303020 - URE-Y 970045 RIV US eng J - Journal Article
Walachová, Jarmila - Zelinka, Jiří - Vaniš, Jan - Chow, D. H. - Schulman, J. N. - Karamazov, Simeon - Cukr, Miroslav - Zich, P. - Král, J. - McGill, T. C.
Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy.
Applied Physics Letters. Roč. 70, č. 26 (1997), s. 3588-3590. ISSN 0003-6951. E-ISSN 1077-3118
R&D Projects: GA ČR GA202/94/1056
Keywords : spectroscopy * semiconductor heterojunctions * semiconductor devices
Impact factor: 3.033, year: 1997
Permanent Link: http://hdl.handle.net/11104/0113308 - 4.0000388 - ÚFE 2005 RIV DE eng J - Journal Article
Vaniš, Jan - Chow, D. H. - Šroubek, Filip - McGill, T. C. M. - Walachová, Jarmila
Characterization of InAs/AlSb tunelling double barrier heterostructure by reverse electron emission spectroscopy with InAs as base electrode.
[Charakterizace InAs/AlSb dvojite tunelove barierove heterostruktury.]
Physica Status Solidi C. Roč. 2, č. 4 (2005), s. 1444-1448. ISSN 1610-1634.
[EXMATEC 2004 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /7./. Montpellier, 01.06.2004-04.06.2004]
R&D Projects: GA AV ČR(CZ) KSK1010104
Keywords : scanning tunnelling microscopy * ballistic transport * semiconductor heterojunctions
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0017652