Search results
- 1.0373132 - FZÚ 2012 US eng A - Abstract
Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Oswald, Jiří - Hazdra, P. - Kuldová, Karla - Hulicius, Eduard - Caha, O.
InAs/GaAs QD capping in kinetically or diffusion limited growth regime.
IC-MOVPE XV. Warrendale: TMS, 2010. s. 44.
[International Metal Organic Vapor Phase Epitaxy Conference /15./. 23.05.2010-28.05.2010, Hyatt Regency Lake Tahoe]
R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253; GA MŠMT LC510; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : InAs/GaAs quantum dot * MOVPE
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0206287 - 2.0373106 - FZÚ 2012 US eng A - Abstract
Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hazdra, P. - Kuldová, Karla - Vyskočil, Jan - Hulicius, Eduard - Šimeček, Tomislav
Influence of strain reducing layer type on electroluminescence and photoluminescence of InAs/GaAs QD structures.
IC-MOVPE XV. Warrendale: TMS, 2010. s. 44.
[International Metal Organic Vapor Phase Epitaxy Conference /15./. 23.05.2010-28.05.2010, Hyatt Regency Lake Tahoe]
R&D Projects: GA ČR GAP102/10/1201; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : InAs/GaAs * quantum dots * MOVPE
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0206262 - 3.0373041 - FZÚ 2012 US eng A - Abstract
Hospodková, Alice - Hulicius, Eduard - Oswald, Jiří - Pangrác, Jiří - Hazdra, P. - Caha, O. - Vyskočil, Jan - Kuldová, Karla
InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots.
The 14th US Biennial Workshop on Organometallic Vapor Phase Epitaxy. 2009 Abstract Book. Warren: American Association for Crystal Growth, 2009. s. 68. ISBN N.
[US Biennial Workshop on Organometallic Vapor Phase Epitaxy /14./. 09.08.2009-14.08.2009, Lake Geneva, Wisconsin]
R&D Projects: GA ČR GA202/09/0676
Keywords : low dimensional structures * photoluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III/V materials
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0006873 - 4.0372948 - FZÚ 2012 GB eng A - Abstract
Oswald, Jiří - Hazdra, P. - Kuldová, Karla - Hospodková, Alice - Hulicius, Eduard - Pangrác, Jiří - Vyskočil, Jan
Electro- and photoluminescence of InAs/GaAs quantum dot structures.
Quantum Dot 2010. Abstracts book. London: IOP, 2010. s. 395. ISBN N.
[Quantum Dot 2010. 26.04.2010-30.04.2010, Nottingham]
R&D Projects: GA ČR GAP102/10/1201; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : electroluminescence * photoluminescence * InAs/GaAs * QD
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0206142