Search results
- 1.0304094 - URE-Y 20030109 GB eng A - Abstract
Nohavica, Dušan - Krier, A.
Structural midifications of InAs based materials for mid-infrared optoelectronic devices.
London: IOP, 2002. Europhysics Conference Abstracts., 26A. The Physics Congress 2002. Abstract Book. s. 60
[Physics Congress 2002 and General Conference of the EPS Condensed Matter Division - CMD /19./ held jointly with Condensed Matter and Material Physics - CMMP 2002. 07.04.2002-11.04.2002, Brighton]
R&D Projects: GA AV ČR IAA2067901
Institutional research plan: CEZ:AV0Z2067918
Keywords : etching
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0114237 - 2.0304093 - URE-Y 20030108 GB eng A - Abstract
Nohavica, Dušan - Krier, A.
Point defects creation during surface reconstruction.
London: IOP, 2002. Europhysics Conference Abstracts., 26A. The Physics Congress 2002. Abstract Book. s. 60
[Physics Congress 2002 and General Conference of the EPS Condensed Matter Division - CMD /19./ held jointly with Condensed Matter and Material Physics - CMMP 2002. 07.04.2002-11.04.2002, Brighton]
R&D Projects: GA AV ČR IAA2067901
Institutional research plan: CEZ:AV0Z2067918
Keywords : MOCVD
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0114236 - 3.0303663 - URE-Y 20000145 CZ cze A - Abstract
Nohavica, Dušan
Modelování růstu polovodičů A3B5 v technologii MO VPE.
[Simulation of the A3B5 growth proces in MO VPE technology.]
Praha: Jednota československých matematiků a fyziků, 2000. ISBN 80-7015-720-8. Sborník příspěvků ze semináře OS Polovodiče FVS JČMF. - (Hulicius, E.; Humlíček, J.; Velický, B.). s. 18
[Liblice 2000. 31.01.2000-02.02.2000, Liblice]
R&D Projects: GA AV ČR IAA2067901
Institutional research plan: CEZ:AV0Z2067918
Keywords : MOCVD * semiconductor epitaxial layers
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0113851