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- 1.0537997 - FZÚ 2021 RIV SK eng C - Conference Paper (international conference)
Hulicius, Eduard - Hospodková, Alice - Slavická Zíková, Markéta
Quantum dots grown by metal-organic vapot phase epitax.
20th Conference of Czech and Slovak Physicists Proceedings. Košice: Slovak Physical Society, Czech Physical Society, 2020 - (Džubinská, A.; Reiffers, M.), s. 73-74. ISBN 978-80-89855-13-1.
[Conference of Czech and Slovak Physicists /20./. Prague (CZ), 07.09.2020-10.09.2020]
R&D Projects: GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : quantum dots * MOVPE * InGaAs * GaAs
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0315829 - 2.0484348 - FZÚ 2018 RIV GB eng J - Journal Article
Hospodková, Alice - Vyskočil, Jan - Zíková, Markéta - Oswald, Jiří - Pangrác, Jiří - Petříček, Otto
GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD.
Materials Research Express. Roč. 4, č. 2 (2017), s. 1-8, č. článku 025502. E-ISSN 2053-1591
R&D Projects: GA ČR(CZ) GP14-21285P; GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : GaAsSb * InAs * InGaAs * quantum dot * solar cells * MOVPE
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.151, year: 2017
Permanent Link: http://hdl.handle.net/11104/0279501 - 3.0474050 - FZÚ 2018 RIV NL eng J - Journal Article
Vyskočil, Jan - Hospodková, Alice - Petříček, Otto - Pangrác, Jiří - Zíková, Markéta - Oswald, Jiří - Vetushka, Aliaksi
GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications.
Journal of Crystal Growth. Roč. 464, Apr (2017), s. 64-68. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR(CZ) GP14-21285P; GA MŠMT LO1603
Institutional support: RVO:68378271
Keywords : InAs * GaAsSb * InGaAs * quantum dot * solar cells
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.742, year: 2017
Permanent Link: http://hdl.handle.net/11104/0271148 - 4.0474047 - FZÚ 2018 RIV NL eng J - Journal Article
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hulicius, Eduard
Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications.
Journal of Crystal Growth. Roč. 464, Apr (2017), s. 59-63. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT LO1603
Institutional support: RVO:68378271
Keywords : MOVPE * quantum dot * strain reducing layer * InAs * GaAsSb * InGaAs
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.742, year: 2017
Permanent Link: http://hdl.handle.net/11104/0271146 - 5.0466110 - FZÚ 2017 US eng A - Abstract
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hulicius, Eduard
Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications.
ICMOVPE XVIII. Program and Exhibit Guide. Warrendale: MRS - Conference Services, 2016. s. 75
R&D Projects: GA MŠMT LO1603
Institutional support: RVO:68378271
Keywords : InAs * GaAsSb * InGaAs * quantum dot * strain reducing layer * MOVPE
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0264510 - 6.0466021 - FZÚ 2017 US eng A - Abstract
Vyskočil, Jan - Hospodková, Alice - Zíková, Markéta - Oswald, Jiří - Pangrác, Jiří - Petříček, Otto - Hulicius, Eduard
GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications.
ICMOVPE XVIII. Program and Exhibit Guide. Warrendale: MRS - Conference Services, 2016 - (Biefeld, R.). s. 44-44
R&D Projects: GA ČR(CZ) GP14-21285P
Institutional support: RVO:68378271
Keywords : InAs * GaAsSb * InGaAs * quantum dot * solar cells
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0264476 - 7.0464517 - FZÚ 2017 CZ eng D - Thesis
Zíková, Markéta
Band structure engineering of InAs/GaAs quantum dots.
České vysoké učení technické v Praze, Fakulta jaderná a fyzikálně inženýrská. Defended: Praha. - Praha: ČVUT, 2016. 108 s.
R&D Projects: GA ČR GA13-15286S; GA ČR GAP102/10/1201; GA ČR(CZ) GP14-21285P; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : semiconductor * quantum dot * strain reducing layer * MOVPE * InAs * GaAs * InGaAs * GaAsSb
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0263399 - 8.0431319 - FZÚ 2015 RIV NL eng J - Journal Article
Dimitrakopulos, G.P. - Bazioti, C. - Grym, Jan - Gladkov, Petar - Hulicius, Eduard - Pangrác, Jiří - Pacherová, Oliva - Komninou, Ph.
Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates.
Applied Surface Science. Roč. 306, Jul (2014), s. 89-93. ISSN 0169-4332. E-ISSN 1873-5584
R&D Projects: GA MŠMT 7AMB12GR034
Institutional support: RVO:68378271 ; RVO:67985882
Keywords : compound semiconductors * InGaAs * porous substrate * misfit dislocations * strain
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.711, year: 2014
Permanent Link: http://hdl.handle.net/11104/0235904File Download Size Commentary Version Access UFE 0431319.pdf 7 1.5 MB Other require - 9.0377890 - FZÚ 2013 RIV US eng J - Journal Article
Fekete, Ladislav - Němec, Hynek - Mics, Zoltan - Kadlec, Filip - Kužel, Petr - Novák, Vít - Lorinčík, Jan - Martin, M. - Mangeney, J. - Delagnes, J.C. - Mounaix, P.
Ultrafast carrier response of Br+ -irradiated In0.53Ga0.47As excitedat telecommunication wavelengths.
Journal of Applied Physics. Roč. 111, č. 9 (2012), "093721-1"-"093721-8". ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA ČR(CZ) GP202/09/P099; GA MŠMT LC512; GA AV ČR(CZ) IAA100100902
Institutional research plan: CEZ:AV0Z10100520; CEZ:AV0Z20670512
Keywords : THz * emiters * InGaAs * photoconductivity
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.210, year: 2012
http://link.aip.org/link/?JAP/111/093721
Permanent Link: http://hdl.handle.net/11104/0209917 - 10.0371545 - FZÚ 2012 DE eng C - Conference Paper (international conference)
Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Vyskočil, Jan - Hulicius, Eduard - Kuldová, Karla
Comparison of InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots.
EWMOVPE 2009. Ulm: DOW Electronic Materials, 2009, s. 179-181.
[European Workshop on Metalorganic Vapor Phase Epitaxy /13./. ULM (DE), 07.06.2009-10.06.2009]
R&D Projects: GA AV ČR IAA100100719; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : MOVPE * quantum dots * InAs/GaAs * InGaAs * GaAsSb
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0205037