Search results
- 1.0474047 - FZÚ 2018 RIV NL eng J - Journal Article
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hulicius, Eduard
Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications.
Journal of Crystal Growth. Roč. 464, Apr (2017), s. 59-63. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT LO1603
Institutional support: RVO:68378271
Keywords : MOVPE * quantum dot * strain reducing layer * InAs * GaAsSb * InGaAs
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.742, year: 2017
Permanent Link: http://hdl.handle.net/11104/0271146 - 2.0469569 - FZÚ 2017 RIV US eng C - Conference Paper (international conference)
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hulicius, Eduard
GaAsSb/InAs QDs structures for advanced telecom lasers.
ASDAM 2016. Danvers: IEEE, 2016 - (Haščík, Š.; Dzuba, J.; Vanko, G.), s. 57-60. ISBN 978-150903083-5.
[International conference on advanced semiconductor devices and microsystems /11./. Smolenice (SK), 13.11.2016-16.11.2016]
R&D Projects: GA MŠMT LO1603
Institutional support: RVO:68378271
Keywords : InAs/GaAs quantum dots * MOVPE * strain reducing layer * long emission wavelength * telecom lasers
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0267401 - 3.0466110 - FZÚ 2017 US eng A - Abstract
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hulicius, Eduard
Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications.
ICMOVPE XVIII. Program and Exhibit Guide. Warrendale: MRS - Conference Services, 2016. s. 75
R&D Projects: GA MŠMT LO1603
Institutional support: RVO:68378271
Keywords : InAs * GaAsSb * InGaAs * quantum dot * strain reducing layer * MOVPE
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0264510 - 4.0464517 - FZÚ 2017 CZ eng D - Thesis
Zíková, Markéta
Band structure engineering of InAs/GaAs quantum dots.
České vysoké učení technické v Praze, Fakulta jaderná a fyzikálně inženýrská. Defended: Praha. - Praha: ČVUT, 2016. 108 s.
R&D Projects: GA ČR GA13-15286S; GA ČR GAP102/10/1201; GA ČR(CZ) GP14-21285P; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : semiconductor * quantum dot * strain reducing layer * MOVPE * InAs * GaAs * InGaAs * GaAsSb
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0263399 - 5.0447827 - FZÚ 2016 RIV NL eng J - Journal Article
Vyskočil, Jan - Gladkov, Petar - Petříček, Václav - Hospodková, Alice - Pangrác, Jiří
Growth and properties of AIII BV QD structures for intermediate band solar cells.
Journal of Crystal Growth. Roč. 414, č. 172 (2015), s. 172-176. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR(CZ) GP14-21285P
Institutional support: RVO:68378271 ; RVO:67985882
Keywords : metalorganic vapor phase epitaxy * InAs/GaAs Quantum dots * GaAsSb Strain reducing layer * solar cells
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.462, year: 2015
Permanent Link: http://hdl.handle.net/11104/0249601 - 6.0433688 - FZÚ 2015 CH eng A - Abstract
Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Zíková, Markéta - Oswald, Jiří - Komninou, Ph. - Hulicius, Eduard
Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy.
International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 14-14
[International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
R&D Projects: GA ČR(CZ) GP14-21285P; GA ČR GA13-15286S
Institutional support: RVO:68378271
Keywords : metalorganic vapor phase epitaxy * InAs/GaAs quantum dots * GaAsSb strain reducing layer * reflectance anisotropy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0237854 - 7.0433687 - FZÚ 2015 CH eng A - Abstract
Vyskočil, Jan - Gladkov, Petar - Petříček, Otto - Hospodková, Alice - Pangrác, Jiří
Growth and properties of AIII BV QD structures for intermediate band solar cells.
International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 7-7
[International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
R&D Projects: GA ČR(CZ) GP14-21285P
Institutional support: RVO:68378271 ; RVO:67985882
Keywords : metalorganic vapor phase epitaxy * InAs/GaAs quantum dots * GaAsSb strain reducing layer * solar cells
Permanent Link: http://hdl.handle.net/11104/0237896 - 8.0429421 - FZÚ 2015 RIV cze P - Patent Document
Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří
GaAsSb vrstva s gradovaným složením redukující pnutí v InAs/GaAs kvantových tečkách.
[Gallium arsenide antimonite layer with graded composition for reducing strain in indium arsenide/gallium arsenide quantum dots.]
2013. Owner: Fyzikální ústav AV ČR, v. v. i. Date of the patent acceptance: 17.04.2013. Patent Number: 303855
Institutional support: RVO:68378271
Keywords : quantum dots * InAs * GaAs * GaAsSb * strain reducing layer
Subject RIV: BH - Optics, Masers, Lasers
http://isdv.upv.cz/portal/pls/portal/portlets.pts.det?xprim=1715180&lan=cs
Permanent Link: http://hdl.handle.net/11104/0234536 - 9.0399637 - FZÚ 2014 CZ eng K - Conference Paper (Czech conference)
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Kubištová, Jana - Hulicius, Eduard - Komninou, Ph. - Kioseoglou, J. - Nikitis, F.
GaAsSb strain reducing layer covering InAs/GaAs quantum dots.
Studentská vědecká konference fyziky pevných látek /3./. Praha: Česká technika - nakladatelství ČVUT, 2013 - (Aubrecht, J.; Kalvoda, L.; Kučeráková, M.; Štěpánková, A.), s. 46-50. ISBN 978-80-01-05344-7.
[Studentská vědecká konference fyziky pevných látek /3./. Krkonoše (CZ), 28.06.2013-02.07.2013]
R&D Projects: GA ČR GA13-15286S; GA MŠMT 7AMB12GR034; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : quantum dot * strain reducing layer * InAs * GaAsSb
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0226876 - 10.0392283 - FZÚ 2014 RIV NL eng J - Journal Article
Hospodková, Alice - Zíková, Markéta - Pangrác, Jiří - Oswald, Jiří - Kuldová, Karla - Vyskočil, Jan - Hulicius, Eduard
Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots.
Journal of Crystal Growth. Roč. 370, MAY (2013), s. 303-306. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR GAP102/10/1201
Institutional research plan: CEZ:AV0Z10100521
Keywords : band alignment * photoluminescence * strain reducing layer * quantum dot * MOVPE * InAs/GaAs
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.693, year: 2013
Permanent Link: http://hdl.handle.net/11104/0221191