Search results
- 1.0549432 - FZÚ 2022 RIV US eng J - Journal Article
Léon, A. - Misra, S. - Levinský, Petr - Hejtmánek, Jiří - Wiendlocha, B. - Lenoir, B. - Candolfi, C.
High temperature thermoelectric properties of the tetradymite Bi2-xPbxTe2Se (0 ≤ x ≤ 0.03).
Applied Physics Letters. Roč. 119, č. 23 (2021), č. článku 232103. ISSN 0003-6951. E-ISSN 1077-3118
R&D Projects: GA ČR GA18-12761S; GA MŠMT(CZ) LM2018096
Institutional support: RVO:68378271
Keywords : thermoelectrics * materials synthesis and characterization * semiconductor doping * carrier concentration
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.971, year: 2021
Method of publishing: Limited access
https://doi.org/10.1063/5.0077166
Permanent Link: http://hdl.handle.net/11104/0325466 - 2.0502374 - FZÚ 2019 RIV CZ eng C - Conference Paper (international conference)
Hájek, František - Hospodková, Alice - Oswald, Jiří - Slavická Zíková, Markéta
Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure.
Proceedings of the 8th Student scientific conference of solid state engineering and materials. Praha: České vysoké učení technické v Praze, 2018 - (Dragounová, K.; Koubský, T.; Kalvoda, L.; Čapek, J.; Trojan, K.; Kolenko, P.), s. 42-45. ISBN 978-80-01-06511-2.
[Student scientific conference of solid state engineering and materials /8./. Sedliště (CZ), 17.09.2018-21.09.2018]
Institutional support: RVO:68378271
Keywords : nitrides * quantum wells * luminescence * semiconductor doping
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0294317 - 3.0341437 - ÚFE 2010 RIV US eng J - Journal Article
Žďánský, Karel - Gorodynskyy, Vladyslav - Pekárek, Ladislav
Detectors of Gamma Rays and Alpha Particles Based on Ta-Doped InP Converted to the Semi-Insulating State by Annealing.
IEEE Transactions on Nuclear Science. Roč. 56, č. 5 (2009), s. 2997-3001. ISSN 0018-9499. E-ISSN 1558-1578
R&D Projects: GA AV ČR KAN400670651; GA AV ČR(CZ) KAN401220801; GA AV ČR IBS2067354
Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z10100520
Keywords : radiation detection * semiconductor doping * crystal growth
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.591, year: 2009
Permanent Link: http://hdl.handle.net/11104/0184434 - 4.0303739 - URE-Y 20000129 FR eng A - Abstract
Žďánský, Karel - Pekárek, Ladislav - Kacerovský, Pavel
Evaluation of InP:Ti and InP:Mn and its use for particle detectors.
Lyon: Nuclear & Plasma Sciences Society, 2000. Book of Abstracts 2000 IEEE Nuclear Science Symposium and Medical Imaging Conference including Sessions on Nuclear Power Systems. s. 28
[IEEE 2000 NSS - MIC. 15.10.2000-20.10.2000, Lyon]
R&D Projects: GA ČR GA106/99/1563
Institutional research plan: CEZ:AV0Z2067918
Keywords : semiconductor doping * semiconductor materials * particle spectrometers
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0113926 - 5.0303472 - URE-Y 990159 RIV SK eng C - Conference Paper (international conference)
Pekárek, Ladislav - Žďánský, Karel
Preparation and electrical properties of semi-insulating indium phosphide crystals.
[Bratislava]: [STU], 1999. In: DMS-RE'99 Development of Materials Science in Research and Education. - (Koman, M.; Mikloš, D.), s. 57-58
[Joint Seminar on Development of Materials Science in Research and Educations - DMS-RE'99 /9./. Gabčíkovo (SK), 14.09.1999-17.09.1999]
R&D Projects: GA ČR GA106/99/1563
Institutional research plan: CEZ:AV0Z2067918
Keywords : III-V semiconductors * semiconductor devices * semiconductor doping * semiconductor materials
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0113687 - 6.0303468 - URE-Y 990044 RIV NL eng J - Journal Article
Nohavica, Dušan - Gladkov, Petar - Žďánský, Karel - Pospíšil, S. (ed.) - Smith, K.M. (ed.) - Wilhelm, I. (ed.)
Preparation and properties of thick intentionally undopted GaInP/GaAs layers.
Nuclear Instruments & Methods in Physics Research Section A. Roč. 434, No 1 Special Issue (1999), s. 164-168. ISSN 0168-9002. E-ISSN 1872-9576.
[International Workshop on Gallium Arsenide and Related Compounds /6./. Prague, 22.06.1998-26.06.1998]
R&D Projects: GA AV ČR IAA1010807
Institutional research plan: CEZ:AV0Z2067918
Keywords : III-V semiconductors * photoluminescence * semiconductor doping
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.921, year: 1999
Permanent Link: http://hdl.handle.net/11104/0113683 - 7.0302597 - URE-Y 940121 US eng J - Journal Article
Žďánský, Karel
Temperature dependence of equilibrium electron density in AlGaAs governed by Sn-related DX centers.
Applied Physics Letters. Roč. 65, č. 15 (1994), s. 1933-1934. ISSN 0003-6951. E-ISSN 1077-3118
Grant - others:GA AV(CZ) IAA167108
Keywords : semiconductor doping * impurities
Impact factor: 3.072, year: 1994
Permanent Link: http://hdl.handle.net/11104/0112975 - 8.0302463 - ÚFE CZ cze D - Thesis
Novotný, L.
Stanovování kompozičního a koncentračního profilu polovodičových heterostruktur C-V metodou.
Praha: ÚRE AV ČR, 1993. 70 s. Kandidátská disertační práce., Diss 228.
Keywords : semiconductor lasers * impurity distributions * semiconductor doping * doping profiles * capacitance measurement
Permanent Link: http://hdl.handle.net/11104/0112882 - 9.0302443 - URE-Y 930052 RIV US eng J - Journal Article
Žďánský, Karel - Peaker, A. R.
Low-temperature decay of photocapacitance caused by Sn-related DX centers in AlxGa1-xAs.
[Nízkoteplotní zánik fotokapacity v AlGaAs způsobené DX centry vztaženými k Sn v AlxGa1-xAs.]
Applied Physics Letters. Roč. 62, č. 12 (1993), s. 1393-1395. ISSN 0003-6951. E-ISSN 1077-3118
R&D Projects: GA AV ČR IAA167108
Keywords : semiconductor doping
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.503, year: 1993
Permanent Link: http://hdl.handle.net/11104/0112862 - 10.0205568 - UPT-D 20020118 RIV NL eng J - Journal Article
Müllerová, Ilona - El-Gomati, M. - Frank, Luděk
Imaging of the boron doping in silicon using low energy SEM.
Ultramicroscopy. Roč. 93, 3/4 (2002), s. 223 - 243. ISSN 0304-3991. E-ISSN 1879-2723
R&D Projects: GA AV ČR IAA1065901; GA AV ČR IBS2065017
Institutional research plan: CEZ:AV0Z2065902
Keywords : electron and ion microscopes * semiconductor doping
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 1.772, year: 2002
Permanent Link: http://hdl.handle.net/11104/0101181