Search results
- 1.0570907 - FZÚ 2024 RIV CZ eng A - Abstract
Hulicius, Eduard - Vaněk, Tomáš - Hospodková, Alice - Blažek, K.
Hybrid detector based on MOVPE grown InGaN/GaN MQW + BGO.
NANOCON 2022 - Book of Abstracts. Ostrava: Tanger Ltd, 2022 - (Zbořil, R.; Váňová, J.). s. 25-25. ISBN 978-80-88365-07-5.
[International Conference on Nanomaterials - Research & Application /14./ NANOCON. 19.10.2022-21.10.2022, Brno]
R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : MOVPE * quantum wells * scintillator
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: https://hdl.handle.net/11104/0342237 - 2.0568264 - FZÚ 2023 RIV DE eng A - Abstract
Batysta, Jan - Hospodková, Alice - Hubáček, Tomáš - Hájek, František - Kuldová, Karla
Compensation of strain in InGaN/GaN QWs by AlGaN layer.
Abstract book of the International Conference on Metalorganic Vapor Phase Epitaxy /20./ - ICMOVPE XX. Stuttgart: University of Stuttgart, 2022 - (Jetter, M.; Scholz, F.). s. 200-200
[International Conference on Metalorganic Vapor Phase Epitaxy ICMOVPE XX /20./. 10.07.2022-14.07.2022, Stuttgart]
R&D Projects: GA TA ČR(CZ) FW03010298
Institutional support: RVO:68378271
Keywords : MOVPE * InGaN/GaN * quantum wells * strain
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: https://hdl.handle.net/11104/0339593 - 3.0567278 - FZÚ 2023 RIV GB eng C - Conference Paper (international conference)
Buryi, Maksym - Hubáček, Tomáš - Hájek, František - Jarý, Vítězslav - Babin, Vladimir - Kuldová, Karla - Vaněk, Tomáš
Luminescence and scintillation properties of the Si doped InGaN/GaN multiple quantum wells.
Journal of Physics: Conference Series. Vol. 2413. Bristol: IOP Publishing, 2022, č. článku 012001. ISSN 1742-6588.
[DMSRE seminar: Development of Materials Science in Research and Education (DMSRE) /31./. Nová Lesná (SK), 05.09.2022-09.09.2022]
R&D Projects: GA ČR(CZ) GJ20-05497Y
Institutional support: RVO:68378271
Keywords : InGaN/GaN multiple quantum wells * Si doping * luminescence
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://iopscience.iop.org/article/10.1088/1742-6596/2413/1/012001
Permanent Link: https://hdl.handle.net/11104/0338546 - 4.0540792 - FZÚ 2021 RIV SK eng C - Conference Paper (international conference)
Oswald, Jiří - Hospodková, Alice - Hubáček, Tomáš - Kuldová, Karla - Pangrác, Jiří - Hájek, František
Nitride multiple quantum well challenge.
20th Conference of Czech and Slovak Physicists Proceedings. Košice: Slovak Physical Society, Czech Physical Society, 2020 - (Džubinská, A.; Reiffers, M.), s. 69-70. ISBN 978-80-89855-13-1.
[Conference of Czech and Slovak Physicists /20./. Prague (CZ), 07.09.2020-10.09.2020]
R&D Projects: GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : nitride semiconductors * GaN * InGaN * quantum wells * luminescence
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0318391 - 5.0532847 - FZÚ 2021 RIV NL eng J - Journal Article
Hospodková, Alice - Hájek, František - Pangrác, Jiří - Slavická Zíková, Markéta - Hubáček, Tomáš - Kuldová, Karla - Oswald, Jiří - Vaněk, Tomáš - Vetushka, Aliaksi - Čížek, J. - Liedke, M.O. - Butterling, M. - Wagner, A.
A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures.
Journal of Crystal Growth. Roč. 536, Apr (2020), s. 1-6, č. článku 125579. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT LM2015087; GA TA ČR TH02010580; GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : quantum wells * defects * impurities * metalorganic vapor phase epitaxy * nitrides
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.797, year: 2020
Method of publishing: Limited access
https://doi.org/10.1016/j.jcrysgro.2020.125579
Permanent Link: http://hdl.handle.net/11104/0311234 - 6.0505794 - FZÚ 2020 RIV NL eng J - Journal Article
Dominec, Filip - Hospodková, Alice - Hubáček, Tomáš - Zíková, Markéta - Pangrác, Jiří - Kuldová, Karla - Vetushka, Aliaksi - Hulicius, Eduard
Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties.
Journal of Crystal Growth. Roč. 507, Feb (2019), s. 246-250. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN quantum wells * GaN buffer layer * scintillators
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.632, year: 2019
Method of publishing: Limited access
https://doi.org/10.1016/j.jcrysgro.2018.11.025
Permanent Link: http://hdl.handle.net/11104/0297183File Download Size Commentary Version Access 0505794.pdf 5 1.1 MB Author’s postprint open-access - 7.0504685 - FZÚ 2020 RIV NL eng J - Journal Article
Toci, G. - Gizzi, L.A. - Koester, P. - Baffigi, F. - Fulgentini, L. - Labate, L. - Hospodková, Alice - Jarý, Vítězslav - Nikl, Martin - Vannini, M.
InGaN/GaN multiple quantum well for superfast scintillation application: photoluminescence measurements of the picosecond rise time and excitation density effect.
Journal of Luminescence. Roč. 208, Apr (2019), s. 119-124. ISSN 0022-2313. E-ISSN 1872-7883
R&D Projects: GA ČR GA16-15569S
Grant - others:COST(XE) TD1401
Institutional support: RVO:68378271
Keywords : multiple quantum wells * InGaN/GaN * scintillator * streak camera * ultrafast rise-time measurements
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.280, year: 2019
Method of publishing: Limited access
https://doi.org/10.1016/j.jlumin.2018.12.034
Permanent Link: http://hdl.handle.net/11104/0296266 - 8.0502838 - FZÚ 2019 RIV NL eng J - Journal Article
Hubáček, Tomáš - Hospodková, Alice - Oswald, Jiří - Kuldová, Karla - Pangrác, Jiří - Zíková, Markéta - Hájek, František - Dominec, Filip - Florini, N. - Komninou, Ph. - Ledoux, G. - Dujardin, C.
Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface.
Journal of Crystal Growth. Roč. 507, Feb (2019), s. 310-315. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT LM2015087; GA ČR(CZ) GA16-11769S; GA MŠMT(CZ) LO1603
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : interfaces * MOVPE * quantum wells * nitrides * scintillators
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.632, year: 2019
Method of publishing: Open access with time embargo
Permanent Link: http://hdl.handle.net/11104/0294724File Download Size Commentary Version Access 0502838.pdf 3 1.3 MB Author’s postprint open-access - 9.0502822 - FZÚ 2019 RIV NL eng J - Journal Article
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Hubáček, Tomáš - Oswald, Jiří - Kuldová, Karla - Hájek, František - Ledoux, G. - Dujardin, C.
Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties.
Journal of Crystal Growth. Roč. 506, Jan (2019), s. 8-13. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR(CZ) GA16-11769S; GA MŠMT(CZ) LO1603
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : low dimensional structures * MOVPE * InGaN/GaN quantum wells * luminescent defect band
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.632, year: 2019
Method of publishing: Open access with time embargo
Permanent Link: http://hdl.handle.net/11104/0294706File Download Size Commentary Version Access 0502822.pdf 4 1.5 MB Author’s postprint open-access - 10.0502374 - FZÚ 2019 RIV CZ eng C - Conference Paper (international conference)
Hájek, František - Hospodková, Alice - Oswald, Jiří - Slavická Zíková, Markéta
Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure.
Proceedings of the 8th Student scientific conference of solid state engineering and materials. Praha: České vysoké učení technické v Praze, 2018 - (Dragounová, K.; Koubský, T.; Kalvoda, L.; Čapek, J.; Trojan, K.; Kolenko, P.), s. 42-45. ISBN 978-80-01-06511-2.
[Student scientific conference of solid state engineering and materials /8./. Sedliště (CZ), 17.09.2018-21.09.2018]
Institutional support: RVO:68378271
Keywords : nitrides * quantum wells * luminescence * semiconductor doping
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0294317