Search results
- 1.0521250 - FZÚ 2020 RIV GB eng J - Journal Article
Colazzo, L. - Mohammed, M.S.G. - Gallardo Caparrós, Aurelio Jesús - Abd El-Fattah, Z.M. - Pomposo, J.A. - Jelínek, Pavel - de Oteyza, D.G.
Controlling the stereospecific bonding motif of Au-thiolate links.
Nanoscale. Roč. 11, č. 33 (2019), s. 15567-15575. ISSN 2040-3364. E-ISSN 2040-3372
R&D Projects: GA MŠMT LM2015087
Grant - others:AV ČR(CZ) AP1601
Program: Akademická prémie - Praemium Academiae
Institutional support: RVO:68378271
Keywords : organometallic * surface science * STM * molecular nanostructures * DTF * low-dimensional structures
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 6.895, year: 2019
Method of publishing: Open access
Permanent Link: http://hdl.handle.net/11104/0305881File Download Size Commentary Version Access 0521250.pdf 0 2.9 MB CC licence Publisher’s postprint open-access - 2.0505794 - FZÚ 2020 RIV NL eng J - Journal Article
Dominec, Filip - Hospodková, Alice - Hubáček, Tomáš - Zíková, Markéta - Pangrác, Jiří - Kuldová, Karla - Vetushka, Aliaksi - Hulicius, Eduard
Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties.
Journal of Crystal Growth. Roč. 507, Feb (2019), s. 246-250. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN quantum wells * GaN buffer layer * scintillators
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.632, year: 2019
Method of publishing: Limited access
https://doi.org/10.1016/j.jcrysgro.2018.11.025
Permanent Link: http://hdl.handle.net/11104/0297183File Download Size Commentary Version Access 0505794.pdf 5 1.1 MB Author’s postprint open-access - 3.0502822 - FZÚ 2019 RIV NL eng J - Journal Article
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Hubáček, Tomáš - Oswald, Jiří - Kuldová, Karla - Hájek, František - Ledoux, G. - Dujardin, C.
Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties.
Journal of Crystal Growth. Roč. 506, Jan (2019), s. 8-13. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR(CZ) GA16-11769S; GA MŠMT(CZ) LO1603
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : low dimensional structures * MOVPE * InGaN/GaN quantum wells * luminescent defect band
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.632, year: 2019
Method of publishing: Open access with time embargo
Permanent Link: http://hdl.handle.net/11104/0294706File Download Size Commentary Version Access 0502822.pdf 4 1.5 MB Author’s postprint open-access - 4.0501534 - FZÚ 2019 GR eng A2 - Proceedings Abstract
Dominec, Filip - Kretková, Tereza - Kuldová, Karla - Hájek, František - Horešovský, Robert - Komninou, P. (ed.) - Hospodková, Alice
Cathodoluminescence of v-pits in InGaN/GaN heterostructure: dependence on QW number and electron penetration depth.
Proceedings of the International Conference on Extended Defects in Semiconductors /19./. Thessaloniki: Aristotle University of Thessaloniki, 2018. P-2-P-2. ISSN N.
[International Conference on Extended Defects in Semiconductors /19./ EDS2018. 24.06.2018-29.06.2018, Thessaloniki]
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institutional support: RVO:68378271
Keywords : low dimensional structures * MOVPE * InGaN/GaN quantum wells * luminescent defect band
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0293552 - 5.0501501 - FZÚ 2019 GR eng A2 - Proceedings Abstract
Kretková, Tereza - Dominec, Filip - Kuldová, Karla - Hájek, František - Novotný, Radek - Hospodková, Alice
Impact of dust contamination on epitaxial growth morphology, cathodoluminescence and photoluminescence.
Proceedings of the International Conference on Extended Defects in Semiconductors /19./. Thessaloniki: Aristotle University of Thessaloniki, 2018. P-11-P-11. ISSN N.
[International Conference on Extended Defects in Semiconductors /19./ EDS2018. 24.06.2018-29.06.2018, Thessaloniki]
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institutional support: RVO:68378271
Keywords : low dimensional structures * MOVPE * InGaN/GaN quantum wells * luminescent defect band
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0293553 - 6.0501495 - FZÚ 2019 JP eng A - Abstract
Hospodková, Alice - Dominec, Filip - Hubáček, Tomáš - Zíková, Markéta - Pangrác, Jiří - Oswald, Jiří - Kuldová, Karla - Vetushka, Aliaksi - Hulicius, Eduard
Suppressed contamination of InGaN/GaN MQW region by growing the buffer layer at lower temperature.
ICMOVPE XIX - Technical Digest. Nara: Japanese Association for Crystal Growth, 2018 - (Miyake, H.). s. 147-147
[19th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XIX. 03.06.2018-08.06.2018, Nara]
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : GaN buffer layer * scintillators * low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN QWs
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0293517 - 7.0501482 - FZÚ 2019 JP eng A - Abstract
Zíková, Markéta - Hospodková, Alice - Hubáček, Tomáš - Pangrác, Jiří - Oswald, Jiří - Hájek, František
Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties.
ICMOVPE XIX - Technical Digest. Nara: Japanese Association for Crystal Growth, 2018 - (Miyake, H.). s. 83-83
[19th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XIX. 03.06.2018-08.06.2018, Nara]
R&D Projects: GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : low dimensional structures * InGaN/GaN quantum wells * MOVPE * luminescent defect band
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0293514 - 8.0474046 - FZÚ 2018 RIV NL eng J - Journal Article
Hospodková, Alice - Hulicius, Eduard - Pangrác, Jiří - Dominec, Filip - Mikhailova, M. P. - Veinger, A.I. - Kochman, I.V.
InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy.
Journal of Crystal Growth. Roč. 464, Apr (2017), s. 206-210. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT LM2015087; GA MŠMT LO1603
Institutional support: RVO:68378271
Keywords : low dimensional structures * MOVPE * InAs/GaSb composite quantum wells * AlSb
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.742, year: 2017
Permanent Link: http://hdl.handle.net/11104/0271145 - 9.0466101 - FZÚ 2017 US eng A - Abstract
Hulicius, Eduard - Pangrác, Jiří - Hospodková, Alice - Mikhailova, M. P. - Veinger, A.I. - Kochman, I.V. - Semenikhin, P.V. - Kalinina, K.V. - Parfeniev, R.V. - Berezovets, V.A.
Shubnikov-de Haas oscillations and microwave radiation absorption of MOVPE grown InAs/GaSb/AlSb deep quantum wells.
ICMOVPE XVIII. Program and Exhibit Guide. Warrendale: MRS - Conference Services, 2016. s. 75
R&D Projects: GA ČR(CZ) GP14-21285P; GA ČR GA16-11769S; GA MŠMT LO1603; GA ČR GA13-15286S; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : low dimensional structures * MOVPE * InAs/GaSb composite quantum wells * AlSb
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0264504 - 10.0463840 - FZÚ 2017 RIV GB eng B - Monography
Pelant, Ivan - Valenta, J.
Luminescence spectroscopy of semiconductors.
Oxford: Oxford University Press, 2012. 560 s. ISBN 978-019958833-6
Institutional support: RVO:68378271
Keywords : luminescence * semiconductors * excitons * optical gain * low-dimensional structures * single-nanocrystal spectroscopy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0263269