Search results
- 1.0517929 - FZÚ 2020 RIV GB eng J - Journal Article
Kurosawa, S. - Shishido, T. - Sugawara, T. - Yubuta, K. - Horiai, T. - Jarý, Vítězslav - Yamaji, A. - Yoshino, M. - Yokota, Y. - Shoji, Y. - Kamada, K. - Yoshikawa, A. - Pejchal, Jan - Nikl, Martin
Scintillation properties of Y-Admixed Gd2Si2O7 scintillator.
Radiation Measurements. Roč. 126, July (2019), s. 1-4, č. článku 106123. ISSN 1350-4487. E-ISSN 1879-0925
R&D Projects: GA MŠMT EF16_013/0001406; GA MŠMT(CZ) LO1409; GA MŠMT(CZ) LM2015088
Grant - others:OP VVV - SAFMAT(XE) CZ.02.1.01/0.0/0.0/16_013/0001406
Institutional support: RVO:68378271
Keywords : single crystal growth * gallium compounds * scintillator materials * scintillators
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.512, year: 2019
Method of publishing: Limited access
https://doi.org/10.1016/j.radmeas.2019.106123
Permanent Link: http://hdl.handle.net/11104/0303165 - 2.0509851 - ÚFM 2020 RIV NL eng J - Journal Article
Lee, L.Y. - Frentrup, M. - Vacek, Petr - Massabuau, Fabien C. P. - Kappers, Menno J. - Wallis, David J. - Oliver, Rachel A.
Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates.
Journal of Crystal Growth. Roč. 524, OCT (2019), č. článku 125167. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT(CZ) EF16_027/0008056
Institutional support: RVO:68081723
Keywords : Atomic force microscopy * Nucleation * X-ray diffraction * Metalorganic vapor phase epitaxy * Nitrides * Semiconducting gallium compounds
OECD category: Electrical and electronic engineering
Impact factor: 1.632, year: 2019
Method of publishing: Limited access
https://www.sciencedirect.com/science/article/pii/S0022024819303823?via%3Dihub
Permanent Link: http://hdl.handle.net/11104/0300844 - 3.0470893 - FZÚ 2017 RIV NL eng J - Journal Article
Kurosawa, S. - Suzuki, A. - Yamaji, A. - Kamada, K. - Pejchal, Jan - Ohashi, Y. - Yokota, Y. - Chani, V.I. - Yoshikawa, A.
Luminescent properties of Cr-doped gallium garnet crystals grown by the micro-pulling-down method.
Journal of Crystal Growth. Roč. 452, Oct (2016), s. 95-100. ISSN 0022-0248. E-ISSN 1873-5002.
[American Conference on Crystal Growth and Epitaxy /20./ (ACCGE) / 17th Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE) / 2nd 2D Electronic Materials Symposium. Big Sky, MT, 02.08.2015-07.08.2015]
Institutional support: RVO:68378271
Keywords : scintillator materials * single crystal growth * gallium compounds
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.751, year: 2016
Permanent Link: http://hdl.handle.net/11104/0268407 - 4.0456264 - FZÚ 2016 RIV NL eng J - Journal Article
Šimek, P. - Sedmidubský, D. - Klímová, K. - Mikulics, M. - Maryško, Miroslav - Veselý, M. - Jurek, Karel - Sofer, Z.
GaN:Co epitaxial layers grown by MOVPE.
Journal of Crystal Growth. Roč. 44, Mar (2015), 62-68. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR GA13-20507S
Institutional support: RVO:68378271
Keywords : doping * metalorganic vapor phase epitaxy * cobalt * gallium compounds * nitrides * magnetic materials spintronics
Subject RIV: CA - Inorganic Chemistry
Impact factor: 1.462, year: 2015
Permanent Link: http://hdl.handle.net/11104/0256820 - 5.0394614 - ÚMCH 2014 RIV NL eng J - Journal Article
Kucek, V. - Drašar, Č. - Navrátil, Jiří - Beneš, L. - Lošťák, P.
Optical and transport properties of GaGeTe single crystals.
Journal of Crystal Growth. Roč. 380, 1 October (2013), s. 72-77. ISSN 0022-0248. E-ISSN 1873-5002
Institutional support: RVO:61389013
Keywords : Bridgman technique * Gallium compounds * Semiconducting ternary compounds
Subject RIV: CA - Inorganic Chemistry
Impact factor: 1.693, year: 2013
Permanent Link: http://hdl.handle.net/11104/0222844 - 6.0335873 - FZÚ 2010 RIV US eng J - Journal Article
Trushin, M. - Výborný, Karel - Moraczewski, P. - Kovalev, A.A. - Schliemann, J. - Jungwirth, Tomáš
Anisotropic magnetoresistance of spin-orbit coupledcarriers scattered from polarized magnetic impurities.
[Anizotropní magnetorezistence spin-orbitálně interagujících nosičů náboje při rozptylu na polarizovaných magnetických nečistotách.]
Physical Review. B. Roč. 80, č. 13 (2009), 134405/1-134405/14. ISSN 1098-0121
R&D Projects: GA AV ČR KJB100100802; GA AV ČR KAN400100652; GA ČR GEFON/06/E002
EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE
Grant - others:AV ČR(CZ) AP0801
Program: Akademická prémie - Praemium Academiae
Institutional research plan: CEZ:AV0Z10100521
Keywords : Boltzmann equation * conduction bands * enhanced magnetoresistance * Fermi surface * ferromagnetic materials * gallium compounds * III-V semiconductors
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.475, year: 2009
http://link.aps.org/doi/10.1103/PhysRevB.80.134405
Permanent Link: http://hdl.handle.net/11104/0180226 - 7.0313176 - FZÚ 2009 RIV US eng J - Journal Article
Hejtmánek, Jiří - Knížek, Karel - Maryško, Miroslav - Jirák, Zdeněk - Sedmidubský, D. - Sofer, Z. - Peřina, Vratislav - Hardtdegen, H. - Buchal, C.
On the magnetic properties of Gd implanted GAN.
[O magnetických vlastnostech GaN s implantovaným Gd.]
Journal of Applied Physics. Roč. 103, č. 7 (2008), 07D107/1-07D107/3. ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA ČR GA104/06/0642
Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10480505
Keywords : ferromagnetic materials * gadolinium * gallium compounds * III-V semiconductors * ion implantation
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.201, year: 2008
Permanent Link: http://hdl.handle.net/11104/0164073 - 8.0303448 - URE-Y 990024 RIV US eng J - Journal Article
Gladkov, Petar - Weber, J.
Low temperature photoluminescence properties of p- and n-type AlxGa1-xAs with x>0.42.
Czechoslovak Journal of Physics. Roč. 49, č. 5 (1999), s. 823-831. ISSN 0011-4626.
[Czech-Chinese Workshop on Advanced Materials for Optoelectronics - AMFO'98. Prague, 15.06.1998-17.06.1998]
Grant - others:AV ČR(CZ) KSK1010601 Projekt 7/96/K:4074
Institutional research plan: CEZ:AV0Z2067918
Keywords : gallium compounds * photoluminescence
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.328, year: 1999
Permanent Link: http://hdl.handle.net/11104/0003142 - 9.0303428 - URE-Y 990017 RIV US eng J - Journal Article
Nohavica, Dušan - Gladkov, Petar - Žďánský, Karel
Preparation and properties of thick not intentionally doped GaInP(As)/GaAs layers for optoelecronic applications.
Czechoslovak Journal of Physics. Roč. 49, č. 5 (1999), s. 797-803. ISSN 0011-4626.
[Czech-Chinese Workshop on Advanced Materials for Optoelectronics - AMFO'98. Prague, 15.06.1998-17.06.1998]
R&D Projects: GA AV ČR KSK1010601 Projekt 7/96/K:4074; GA AV ČR KSK1010601 Projekt 7/96/K:4073
Institutional research plan: CEZ:AV0Z2067918
Keywords : gallium compounds * epitaxial growth * photoluminescence * Hall effect
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.328, year: 1999
Permanent Link: http://hdl.handle.net/11104/0003141 - 10.0303324 - URE-Y 980129 CZ eng A - Abstract
Nohavica, Dušan - Gladkov, Petar - Žďánský, Karel
Preparation and properties of thick GaInP(As)/GaAs layers for optoelecronic applications.
Prague: IREE AS CR, 1998. ISBN 80-86269-019. AMFO'98. - (Procházková, O.). s. 22
[Czech-Chinese Workshop on Advanced Materials for Optoelectronics - AMFO'98. 15.06.1998-17.06.1998, Prague]
R&D Projects: GA AV ČR KSK1010601 Projekt 7/96/K:4074; GA AV ČR KSK1010601 Projekt 7/96/K:4073
Keywords : gallium compounds * epitaxial growth * photoluminescence * Hall effect
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0113570