Search results
- 1.0495568 - ÚFM 2019 RIV US eng J - Journal Article
Musiienko, A. - Grill, R. - Moravec, P. - Fochuk, P. - Vasylchenko, I. - Elhadidy, Hassan - Šedivy, L.
Photo-Hall-Effect Spectroscopy with Enhanced Illumination in p-Cd1-xMnxTe Showing Negative Differential Photoconductivity.
Physical Review Applied. Roč. 10, č. 1 (2018), č. článku 014019. ISSN 2331-7019. E-ISSN 2331-7019
Institutional support: RVO:68081723
Keywords : semiinsulating cdte * cdznte detectors * deep levels * x-ray * semiconductors * electrons * crystals
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 4.532, year: 2018
Permanent Link: http://hdl.handle.net/11104/0288517 - 2.0355867 - FZÚ 2011 RIV US eng C - Conference Paper (international conference)
Dubecký, F. - Ladzianský, M. - Kindl, Dobroslav - Nečas, V.
Semi-insulating GaAs radiation detectors: PICTS study of neutron-induced defects.
ASDAM 2010. Piscataway: IEEE, 2010 - (Breza, J.; Donoval, D.; Vavrinsky, E.), s. 207-210. ISBN 978-1-4244-8572-7.
[ASDAM 2010 - The Eight International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle (SK), 25.10.2010-27.10.2010]
Institutional research plan: CEZ:AV0Z10100521
Keywords : SI GaAs detectors * neutron bombardment * deep levels * PICTS
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0006319 - 3.0328675 - FZÚ 2010 RIV US eng J - Journal Article
Kindl, Dobroslav - Hubík, Pavel - Krištofik, Jozef - Mareš, Jiří J. - Výborný, Zdeněk - Leys, M.R. - Boeykens, S.
Deep defects in GaN/AlGaN/SiC hererostructures.
[Hluboké defekty v heterostrukturách GaN/AlGaN/SiC.]
Journal of Applied Physics. Roč. 105, č. 9 (2009), 093706/1-093706/8. ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA ČR GA202/07/0525
Institutional research plan: CEZ:AV0Z10100521
Keywords : nitrides * silicon carbide * deep levels * DLTS
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.072, year: 2009
Permanent Link: http://hdl.handle.net/11104/0174934 - 4.0323030 - FZÚ 2009 RIV NL eng J - Journal Article
Žďánský, Karel - Kozak, Halina - Sopko, B. - Pekárek, Ladislav
Study of Schottky diodes made on Mn doped p-type InP.
[Studium Šottkyho diod na InP dopovaném Mn.]
Journal of Materials Science-Materials in Electronics. Roč. 19, č. 1 (2008), S333-S337. ISSN 0957-4522. E-ISSN 1573-482X
R&D Projects: GA AV ČR KAN400670651
Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z10100520
Keywords : Schottky effect * semiconductors * deep levels
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.054, year: 2008
Permanent Link: http://hdl.handle.net/11104/0171112 - 5.0320707 - FZÚ 2009 RIV US eng C - Conference Paper (international conference)
Kindl, Dobroslav - Hubík, Pavel - Mareš, Jiří J. - Krištofik, Jozef
Interpretation of the DLTS spectra of silicon p-n junctions prepared by diffusion technique.
[Interpretace DLTS spekter p-n přechodů v křemíku připravených difúzní technologií.]
ASDAM 2008. Piscataway, N.J: IEEE Operation Center, 2008 - (Haščík, Š.; Osvald, J.), 155 - 158. ISBN 978-1-4244-2325-5.
[International Conference on Advanced Semiconductor Devices and Microsystems /7./. Smolenice Castle (SK), 12.10.2008-16.10.2008]
R&D Projects: GA ČR GA202/07/0525
Institutional research plan: CEZ:AV0Z10100521
Keywords : silicon * p-n junction * deep levels * DLTS
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0169500 - 6.0304222 - URE-Y 20030126 RIV DE eng J - Journal Article
Žďánský, Karel - Hlídek, P. - Pekárek, Ladislav
Behaviour of manganese in InP compared with other impurities of 3d transition metals.
Physica Status Solidi A. Roč. 195, č. 1 (2003), s. 74-80. ISSN 0031-8965.
[EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./. Budapest, 26.05.2002-29.05.2002]
R&D Projects: GA AV ČR IBS2067354; GA AV ČR KSK1010104 Projekt 04/01:4044
Institutional research plan: CEZ:AV0Z2067918
Keywords : deep levels * semiconductor growth * Hall effect
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 0.950, year: 2003
Permanent Link: http://hdl.handle.net/11104/0114363 - 7.0304164 - URE-Y 20030024 FR eng A - Abstract
Žďánský, Karel - Pekárek, Ladislav - Hlídek, P.
Study of indium phosphide wafers treated by long time annealing at high temperatures.
BatzsurMer: Institut des Materiaux Jean Rouxel, 2003. Program and Abstracts DRIP X. s. 146
[DRIP /10./. 29.09.2003-02.10.2003, Batz-sur-Mer]
R&D Projects: GA AV ČR IBS2067354
Institutional research plan: CEZ:AV0Z2067918
Keywords : Hall effect * deep levels * light absorption
Subject RIV: JB - Sensors, Measurment, Regulation
Permanent Link: http://hdl.handle.net/11104/0114305 - 8.0304152 - URE-Y 20030025 RIV GB eng J - Journal Article
Žďánský, Karel - Pekárek, Ladislav - Hlídek, P.
Pure and intentionally doped indium phosphide wafers treated by long time annealing at high temperatures.
Semiconductor Science and Technology. Roč. 18, č. 11 (2003), s. 938-944. ISSN 0268-1242. E-ISSN 1361-6641
R&D Projects: GA AV ČR IBS2067354; GA AV ČR KSK1010104 Projekt 04/01:4044
Institutional research plan: CEZ:MSM 113200002
Keywords : deep levels * light absorption * Hall effect
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 1.603, year: 2003
Permanent Link: http://hdl.handle.net/11104/0114293 - 9.0304059 - URE-Y 20020096 HU eng A - Abstract
Žďánský, Karel - Hlídek, P. - Pekárek, Ladislav
Behaviour of manganese in InP in comparison with other impurities of 3d transition metals.
Budapest: Rese, 2002. Book of Abstracts EXMATEC'2002. s. 126-127
[EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./. 26.05.2002-29.05.2002, Budapest]
R&D Projects: GA ČR GA106/99/1563; GA AV ČR KSK1010104 Projekt 04/01:4044
Institutional research plan: CEZ:AV0Z2067918
Keywords : deep levels * semiconductor growth * Hall effect
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0114203 - 10.0303425 - URE-Y 990016 RIV US eng J - Journal Article
Žďánský, Karel - Hawkins, I.
Slow decay of photoconductivity caused by tin-related DX centres in AlGaAs.
Czechoslovak Journal of Physics. Roč. 49, č. 5 (1999), s. 813-821. ISSN 0011-4626.
[Czech-Chinese Workshop on Advanced Materials for Optoelectronics - AMFO'98. Prague, 15.06.1998-17.06.1998]
Grant - others:AV ČR(CZ) KSK1010601 Projekt 7/96/K:4074
Institutional research plan: CEZ:AV0Z2067918
Keywords : deep levels * III-V semiconductors * semiconductor junctions
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.328, year: 1999
Permanent Link: http://hdl.handle.net/11104/0003140