Search results
- 1.0556260 - FZÚ 2023 RIV GB eng J - Journal Article
Stránská Matějová, J. - Hospodková, Alice - Košutová, T. - Hubáček, Tomáš - Hývl, Matěj - Holý, V.
V-pits formation in InGaN/GaN: influence of threading dislocations and indium content.
Journal of Physics D-Applied Physics. Roč. 55, č. 25 (2022), č. článku 255101. ISSN 0022-3727. E-ISSN 1361-6463
R&D Projects: GA MŠMT(CZ) LTAIN19163; GA MŠMT EF16_026/0008382
Grant - others:OP VVV - CARAT CZ.02.1.01/0.0/0.0/16_026/0008382
Research Infrastructure: CzechNanoLab - 90110
Institutional support: RVO:68378271
Keywords : V-pits * InGaN/GaN * dislocations * x-ray diffraction * diffuse scattering * XRD * RSM
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.4, year: 2022
Method of publishing: Open access with time embargo
https://doi.org/10.1088/1361-6463/ac5c1a
Permanent Link: http://hdl.handle.net/11104/0330551File Download Size Commentary Version Access 0556260.pdf 4 11.9 MB Author’s postprint open-access - 2.0505794 - FZÚ 2020 RIV NL eng J - Journal Article
Dominec, Filip - Hospodková, Alice - Hubáček, Tomáš - Zíková, Markéta - Pangrác, Jiří - Kuldová, Karla - Vetushka, Aliaksi - Hulicius, Eduard
Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties.
Journal of Crystal Growth. Roč. 507, Feb (2019), s. 246-250. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN quantum wells * GaN buffer layer * scintillators
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.632, year: 2019
Method of publishing: Limited access
https://doi.org/10.1016/j.jcrysgro.2018.11.025
Permanent Link: http://hdl.handle.net/11104/0297183File Download Size Commentary Version Access 0505794.pdf 5 1.1 MB Author’s postprint open-access - 3.0501495 - FZÚ 2019 JP eng A - Abstract
Hospodková, Alice - Dominec, Filip - Hubáček, Tomáš - Zíková, Markéta - Pangrác, Jiří - Oswald, Jiří - Kuldová, Karla - Vetushka, Aliaksi - Hulicius, Eduard
Suppressed contamination of InGaN/GaN MQW region by growing the buffer layer at lower temperature.
ICMOVPE XIX - Technical Digest. Nara: Japanese Association for Crystal Growth, 2018 - (Miyake, H.). s. 147-147
[19th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XIX. 03.06.2018-08.06.2018, Nara]
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : GaN buffer layer * scintillators * low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN QWs
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0293517