Search results
- 1.0583098 - ÚFP 2024 RIV US eng J - Journal Article
Tolias, P. - Komm, Michael - Ratynskaia, S. - Podolník, Aleš
ITER relevant multi-emissive sheaths at normal magnetic field inclination.
Nuclear Fusion. Roč. 63, č. 2 (2023), č. článku 026007. ISSN 0029-5515. E-ISSN 1741-4326
R&D Projects: GA MŠMT(CZ) EF16_013/0001551
EU Projects: European Commission(BE) 101052200
Institutional support: RVO:61389021
Keywords : emissive sheath * escaping current density * macroscopic melt motion * Schottky effect * secondary electron emission * thermionic emission
OECD category: Fluids and plasma physics (including surface physics)
Impact factor: 3.3, year: 2022
Method of publishing: Open access
https://iopscience.iop.org/article/10.1088/1741-4326/acaabd
Permanent Link: https://hdl.handle.net/11104/0351096
Research data: Zenodo - 2.0536450 - ÚFP 2021 RIV NL eng J - Journal Article
Tolias, P. - Komm, Michael - Ratynskaia, S. - Podolník, Aleš
Origin and nature of the emissive sheath surrounding hot tungsten tokamak surfaces.
Nuclear Materials and Energy. Roč. 25, December (2020), č. článku 100818. E-ISSN 2352-1791
R&D Projects: GA MŠMT(CZ) EF16_013/0001551
EU Projects: European Commission(XE) 633053 - EUROfusion
Institutional support: RVO:61389021
Keywords : Melt motion * Schottky effect * Secondary electron emission * Thermionic emission * Tungsten * Virtual cathode
OECD category: Fluids and plasma physics (including surface physics)
Impact factor: 2.320, year: 2020
Method of publishing: Open access
https://www.sciencedirect.com/science/article/pii/S2352179120300922?via%3Dihub
Permanent Link: http://hdl.handle.net/11104/0314225 - 3.0323030 - FZÚ 2009 RIV NL eng J - Journal Article
Žďánský, Karel - Kozak, Halina - Sopko, B. - Pekárek, Ladislav
Study of Schottky diodes made on Mn doped p-type InP.
[Studium Šottkyho diod na InP dopovaném Mn.]
Journal of Materials Science-Materials in Electronics. Roč. 19, č. 1 (2008), S333-S337. ISSN 0957-4522. E-ISSN 1573-482X
R&D Projects: GA AV ČR KAN400670651
Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z10100520
Keywords : Schottky effect * semiconductors * deep levels
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.054, year: 2008
Permanent Link: http://hdl.handle.net/11104/0171112 - 4.0303661 - URE-Y 20000068 CZ cze A - Abstract
Vaniš, Jan - Walachová, Jarmila - Zelinka, Jiří - Karamazov, S. - Lošťák, P. - Cukr, Miroslav - Zich, P. - Horák, Jaromír - Czajka, R. - Chow, D.H. - McGill, T. C.
Výsledky studie polovodičů a polovodičových struktur pomocí BEEM/BEES, STM a AFM.
[Study of semiconductors a semiconductor heterostructures by BEEM/BEES, STM and AFM.]
Praha: Jednota československých matematiků a fyziků, 2000. ISBN 80-7015-720-8. Sborník příspěvků ze semináře OS Polovodiče FVS JČMF. - (Hulicius, E.; Humlíček, J.; Velický, B.). s. 33
[Liblice 2000. 31.01.2000-02.02.2000, Liblice]
R&D Projects: GA ČR GA102/97/0427
Institutional research plan: CEZ:AV0Z2067918
Keywords : nanostructured materials * semiconductor materials * thermoelectric devices * Schottky effect
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0113849 - 5.0303182 - URE-Y 980116 RIV PL eng J - Journal Article
Walachová, Jarmila
Some applications of ballistic electron emission microscopy/spectroscopy.
Acta Physica Polonica A. Roč. 93, č. 2 (1998), s. 365-372. ISSN 0587-4246. E-ISSN 1898-794X.
[Scanning Probe Spectroscopy and Related Methods - SPS'97 /1./. Poznan, 15.07.1997-18.07.1997]
R&D Projects: GA ČR GA102/97/0427
Keywords : field emission electron microscopes * nanostructured materials * Schottky effect
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 0.344, year: 1998
Permanent Link: http://hdl.handle.net/11104/0113428 - 6.0303050 - URE-Y 970054 PL eng A - Abstract
Walachová, Jarmila
Some applications of ballistic electron emission microscopy spectroscopy.
Poznan: University of Technology, 1997. Programme and Abstracts of the First International Symposium on Scanning Probe Spectroscopy and Related Methods. s. I-14
[Scanning Probe Spectroscopy and Related Methods - SPS'97 /1./. 15.07.1997-18.07.1997, Poznan]
R&D Projects: GA ČR 102/97/0427
Keywords : field emission electron microscopes * nanostructured materials * Schottky effect
Permanent Link: http://hdl.handle.net/11104/0113338 - 7.0302262 - URE-Y 920022 US eng J - Journal Article
Walachová, Jarmila
Improvement of the probe profiling method for InP/GaInAsP structures using Kr+ ions bombardment.
Applied Physics Letters. Roč. 60, č. 23 (1992), s. 2920-2922. ISSN 0003-6951. E-ISSN 1077-3118
Institutional research plan: Ústavní úkol č. 0130
Keywords : semiconductor quantum wells * semiconductor lasers * Schottky effect
Impact factor: 3.537, year: 1992
Permanent Link: http://hdl.handle.net/11104/0112728 - 8.0088293 - ÚFE 2008 DE eng A - Abstract
Žďánský, Karel - Kozak, Halina - Sopko, B. - Pekárek, Ladislav
Study of Schottky diodes made on Mn doped p-type InP.
[Výzkum Schottkyho diod připravených na Mn dopovaném InP typu p.]
DRIP-XII 2007:12th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors. Programme & Abstracts. Berlin: [Forschungsverbund Berlin], 2007. s. 133--.
[DRIP /12./. 09.09.2007-13.09.2007, Berlin]
R&D Projects: GA AV ČR KAN400670651
Institutional research plan: CEZ:AV0Z20670512
Keywords : Schottky effect * semiconductors * deep levels
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0149870