Search results
- 1.0557316 - FZÚ 2023 RIV CH eng J - Journal Article
Hazdra, P. - Laposa, A. - Šobáň, Zbyněk - Taylor, Andrew - Lambert, Nicolas - Povolný, V. - Kroutil, J. - Gedeonová, Zuzana - Hubík, Pavel - Mortet, Vincent
Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers.
Diamond and Related Materials. Roč. 126, June (2022), č. článku 109088. ISSN 0925-9635. E-ISSN 1879-0062
R&D Projects: GA ČR(CZ) GA20-11140S; GA MŠMT(CZ) EF16_019/0000760; GA MŠMT LM2018110
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : diamond * Schottky diodes * boron-doping * molybdenum
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 4.1, year: 2022
Method of publishing: Limited access
https://doi.org/10.1016/j.diamond.2022.109088
Permanent Link: http://hdl.handle.net/11104/0331353 - 2.0499935 - ÚFE 2019 RIV US eng J - Journal Article
Tiagulskyi, Stanislav - Yatskiv, Roman - Grym, Jan
Electrical Characterization of Graphite/InP Schottky Diodes by I-V-T and C-V Methods.
Journal of Electronic Materials. Roč. 47, č. 9 (2018), s. 4950-4954. ISSN 0361-5235. E-ISSN 1543-186X.
[17th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP). Valladolid, 08.10.2018-12.10.2018]
R&D Projects: GA ČR(CZ) GA17-00546S
Institutional support: RVO:67985882
Keywords : Carbon-based Schottky diodes * current–voltage measurements * capacitance–voltage measurements
OECD category: Electrical and electronic engineering
Impact factor: 1.676, year: 2018
Permanent Link: http://hdl.handle.net/11104/0292119File Download Size Commentary Version Access UFE 0499935.pdf 2 733.3 KB Other require - 3.0493520 - ÚFM 2019 RIV CH eng J - Journal Article
Elhadidy, Hassan - Mahi, F. Z. - Franc, J. - Musiienko, A. - Dědic, V. - Schneeweiss, Oldřich
High frequency noise calculation in Schottky metal-semiconductor-metal structure and parameter retrieval of nanometric CdTe structure.
Thin Solid Films. Roč. 645, JAN (2018), s. 340-344. ISSN 0040-6090. E-ISSN 1879-2731
R&D Projects: GA MŠMT(CZ) LQ1601
Institutional support: RVO:68081723
Keywords : barrier diodes * hgcdte photodiodes * 1/f noise * Metal-semiconductor-metal structure * Nanometric Schottky diodes * Noise spectral density * Au-CdTe-Au * Leakage current * Terahertz frequency * Resonance peaks * Barrier lowering
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.888, year: 2018
Permanent Link: http://hdl.handle.net/11104/0286875 - 4.0428559 - ÚFE 2015 RIV GB eng J - Journal Article
Yatskiv, Roman - Grym, Jan - Brus, V.V. - Černohorský, Ondřej - Maryanchuk, P.D. - Bazioti, C. - Dimitrakopulos, G.P. - Komninou, Ph.
Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles.
Semiconductor Science and Technology. Roč. 29, č. 4 (2014), Article number 045017. ISSN 0268-1242. E-ISSN 1361-6641
R&D Projects: GA MŠMT LD12014
Institutional support: RVO:67985882
Keywords : electrophoretic deposition * Pt nanoparticles * Schottky diodes
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 2.190, year: 2014
Permanent Link: http://hdl.handle.net/11104/0233890File Download Size Commentary Version Access UFE 0428559.pdf 8 996 KB Other require - 5.0396812 - ÚFE 2014 RIV CH eng C - Conference Paper (international conference)
Yatskiv, Roman - Žďánský, Karel - Grym, Jan
Hydrogen detection with semimetal graphite-ZnO (InP,GaN) Schottky diodes.
Materials and Applications for Sensors and Transducers II ( Key Engineering Materials 543). Vol. 543. ZURICH: TRANS TECH PUBLICATIONS LTD, 2013 - (Hristoforou, E.; Vlachos, D.), s. 159-162. ISBN 9783037856161. ISSN 1013-9826.
[2nd International Conference on Materials and Applications for Sensors and Transducers, IC-MAST. Budapest (HU), 24.05.2012-28.05.2012]
R&D Projects: GA MŠMT(CZ) OC10021
Institutional support: RVO:67985882
Keywords : Graphite based Schottky diodes * Pt nanoparticles * Hydrogen sensor
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0224541 - 6.0387288 - ÚFE 2013 RIV US eng J - Journal Article
Yatskiv, Roman - Grym, Jan
Temperature-dependent properties of semimetal graphite-ZnO Schottky diodes.
Applied Physics Letters. Roč. 101, č. 16 (2012), s. 1621061-1621063. ISSN 0003-6951. E-ISSN 1077-3118
R&D Projects: GA MŠMT(CZ) OC10021; GA MŠMT LD12014
Institutional support: RVO:67985882
Keywords : Schottky diodes * ZnO * Richardson constant
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 3.794, year: 2012
Permanent Link: http://hdl.handle.net/11104/0220244File Download Size Commentary Version Access UFE 0387288.pdf 6 230.9 KB Other require - 7.0382126 - ÚFE 2013 RIV DE eng J - Journal Article
Yatskiv, Roman - Grym, Jan - Žďánský, Karel
High sensitivity hydrogen sensors based on GaN.
Physica status solidi C. Roč. 7, č. 9 (2012), s. 1661-1663. E-ISSN 1610-1642.
[16th International Semiconducting and Insulating Materials Conference (SIMC-XVI). Stockholm, 19.06.2011-23.06.2011]
R&D Projects: GA MŠMT(CZ) OC10021
Institutional support: RVO:67985882
Keywords : Pt nanoparticles * Graphite based Schottky diodes * Hydrogen sensor * GaN
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0216539 - 8.0382124 - ÚFE 2013 RIV US eng J - Journal Article
Yatskiv, Roman - Grym, Jan - Žďánský, Karel - Piksová, K.
Semimetal graphite/ZnO Schottky diodes and their use for hydrogen sensing.
Carbon. Roč. 50, č. 10 (2012), s. 3928-3933. ISSN 0008-6223. E-ISSN 1873-3891
R&D Projects: GA MŠMT(CZ) OC10021
Institutional support: RVO:67985882
Keywords : Schottky diodes * ZnO * Hydrogen sensor
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 5.868, year: 2012
Permanent Link: http://hdl.handle.net/11104/0212439File Download Size Commentary Version Access UFE 0382124.pdf 9 490.6 KB Other require - 9.0303318 - URE-Y 980153 CZ eng A - Abstract
Malina, Václav - Žďánský, Karel - Vogel, K. - Ressel, P. - Pécz, B.
Ohmic and Schottky contacts to InGaP epitaxial layers.
Prague: IREE AS CR, 1998. ISBN 80-86269-019. AMFO'98. - (Procházková, O.). s. 24
[Czech-Chinese Workshop on Advanced Materials for Optoelectronics - AMFO'98. 15.06.1998-17.06.1998, Prague]
Grant - others:AV ČR(CZ) KSK1010601 Projekt 7/96/K:4074
Keywords : ohmic contacts * epitaxial layers * Schottky diodes
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0113564 - 10.0043103 - ÚFE 2007 RIV SK eng C - Conference Paper (international conference)
Kozak, Halina - Sopko, B. - Žďánský, Karel
Investigation of temperature dependence of electrical properties of InP:Mn Schottky diodes.
[Výzkum teplotní závislosti elektrických vlastností Schottkyho diod na InP:Mn.]
Proceedings of the 12th International Conference on Applied Physics of Condensed Matter. Bratislava: Slovak University of Technology in Bratislava, 2006 - (Weis, M.; Vajda, J.), s. 137-141. ISBN 80-227-2424-6.
[APCOM 2006 - Applied Physics of Condensed Matter /12./. Malá Lučivná (SK), 21.06.2006-23.06.2006]
R&D Projects: GA AV ČR(CZ) KAN400670651
Institutional research plan: CEZ:AV0Z20670512
Keywords : Schottky diodes * III-V semiconductors * Hall effect
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0136190