Search results
- 1.0578139 - FZÚ 2024 RIV US eng J - Journal Article
Hazdra, P. - Laposa, A. - Šobáň, Z. - Kroutil, J. - Lambert, Nicolas - Povolný, V. - Taylor, Andrew - Mortet, Vincent
Pseudo-vertical Schottky diode with Ruthenium contacts on (113) boron-doped homoepitaxial diamond layers.
Physica Status Solidi A. Roč. 220, č. 23 (2023), č. článku 2300508. ISSN 1862-6300. E-ISSN 1862-6319
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GA20-11140S
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Research Infrastructure: CzechNanoLab II - 90251
Institutional support: RVO:68378271
Keywords : boron-doped diamond (BDD) * pseudo-vertical Schottky barrier diodes (pVSBDs) * ruthenium (Ru) ohmic contact * ruthenium (Ru) Schottky contact
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 2, year: 2022
Method of publishing: Limited access
https://doi.org/10.1002/pssa.202300508
Permanent Link: https://hdl.handle.net/11104/0348945 - 2.0395144 - ÚFE 2014 RIV GB eng C - Conference Paper (international conference)
Yatskiv, Roman - Grym, Jan
Hydrogen sensing using reduced graphene oxide sheets supported by Pd nanoparticles.
SENSORS & THEIR APPLICATIONS XVII. Vol. 450. BRISTOL: IOP PUBLISHING LTD, 2013 - (Bilas, V.; McConnell, G.; Kyriacou, P.), 012020. ISSN 1742-6588.
[17th Conference in the biennial Sensors and Their Applications. Dubrovnik (HR), 16.09.2013-18.09.2013]
R&D Projects: GA MŠMT LD12014
Institutional support: RVO:67985882
Keywords : Schottky barrier diodes * Graphene * Nanocrystals
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0224287 - 3.0395141 - ÚFE 2014 RIV GB eng J - Journal Article
Grym, Jan - Yatskiv, Roman
Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers.
Semiconductor Science and Technology. Roč. 28, č. 4 (2013). ISSN 0268-1242. E-ISSN 1361-6641
R&D Projects: GA MŠMT LD12014
Institutional support: RVO:67985882
Keywords : Colloidal graphite * Epitaxial growth * Schottky barrier diodes
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 2.206, year: 2013
Permanent Link: http://hdl.handle.net/11104/0223262 - 4.0395132 - ÚFE 2014 RIV GB eng J - Journal Article
Yatskiv, Roman - Grym, Jan
Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes.
Semiconductor Science and Technology. Roč. 28, č. 5 (2013). ISSN 0268-1242. E-ISSN 1361-6641
R&D Projects: GA MŠMT LD12014
Institutional support: RVO:67985882
Keywords : Gallium nitride * Schottky barrier diodes * Graphite
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 2.206, year: 2013
Permanent Link: http://hdl.handle.net/11104/0223260File Download Size Commentary Version Access UFE 0395132.pdf 12 508.5 KB Other require