Search results
- 1.0521995 - FZÚ 2020 RIV US eng C - Conference Paper (international conference)
Dubecký, F. - Kindl, Dobroslav - Hubík, Pavel - Mičušík, M. - Boháček, P. - Zaťko, B. - Gombia, E. - Kováč, J. - Nečas, V.
Role of contacts in metal/semi-insulating GaAs/metal structures: Symmetrical geometry.
APCOM 2019. New York: American Institute of Physics Inc., 2019 - (Jamnicky, I.; Vajda, J.; Sitek, J.), s. 1-4, č. článku 020010. ISBN 9780735418738.
[International Conference on Applied Physics of Condensed Matter /25./. Štrbské Pleso (SK), 19.06.2019-21.06.2019]
Institutional support: RVO:68378271
Keywords : SI-GaAs * heterojunction * I-V characteristics * capacitance
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://printorders.aip.org/proceedings/2131
Permanent Link: http://hdl.handle.net/11104/0306535 - 2.0355867 - FZÚ 2011 RIV US eng C - Conference Paper (international conference)
Dubecký, F. - Ladzianský, M. - Kindl, Dobroslav - Nečas, V.
Semi-insulating GaAs radiation detectors: PICTS study of neutron-induced defects.
ASDAM 2010. Piscataway: IEEE, 2010 - (Breza, J.; Donoval, D.; Vavrinsky, E.), s. 207-210. ISBN 978-1-4244-8572-7.
[ASDAM 2010 - The Eight International Conference on Advanced Semiconductor Devices and Microsystems. Smolenice Castle (SK), 25.10.2010-27.10.2010]
Institutional research plan: CEZ:AV0Z10100521
Keywords : SI GaAs detectors * neutron bombardment * deep levels * PICTS
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0006319 - 3.0349319 - FZÚ 2011 RIV SK eng C - Conference Paper (international conference)
Dubecký, F. - Hubík, Pavel - Gombia, E. - Zat'ko, B. - Kindl, Dobroslav - Dubecký, M. - Boháček, P.
Anomalous charge current transport in semi-insulatingGaAs with a new contact metallization: Influence of 2DEG formed at the M-S interface.
SURFINT-SREN II. Bratislava: Comenius University, 2010 - (Brunner, R.), s. 19-22. ISBN 978-80-223-2723-7.
[Progress in Applied Surface, Interface and Thin Film Science 2009. Florence (IT), 16.11.2009-19.11.2009]
R&D Projects: GA ČR GA202/07/0525
Institutional research plan: CEZ:AV0Z10100521
Keywords : SI-GaAs * X-ray detectors * charge transport * metallization
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0189588 - 4.0349314 - FZÚ 2011 RIV SK eng C - Conference Paper (international conference)
Dubecký, F. - Kováč, J. - Mudroň, J. - Hubík, Pavel - Dubecký, M. - Gombia, E.
Photocurrent spectroscopy of semi-insulating GaAs with a new contact metallization: indication of 2DEG formed at the M-S interface.
APCOM 2010. Bratislava: Slovak University of Technology, 2010 - (Vajda, J.; Weis, M.), s. 29-32. ISBN 978-80-227-3307-6.
[International Conference on Applied Physics of Condensed Matter /16./. Malá Lučivná (SK), 16.06.2010-18.06.2010]
Institutional research plan: CEZ:AV0Z10100521
Keywords : SI-GaAs * detectors * photocurrent * blocking electrodes
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0189585 - 5.0053581 - FZÚ 2007 RIV US eng J - Journal Article
Stojanovic, N. - von der Linde, D. - Sokolowski-Tinten, K. - Zastrau, U. - Perner, F. - Förster, E. - Sobierajski, R. - Nietubyc, R. - Jurek, M. - Klinger, D. - Pelka, J. - Krzywinski, J. - Juha, Libor - Cihelka, Jaroslav - Velyhan, Andriy - Koptyaev, Sergey - Hájková, Věra - Chalupský, Jaromír - Kuba, J. - Tschentscher, T. - Toleikis, S. - Dusterer, S. - Redlin, H.
Ablation of solids using a femtosecond extreme ultraviolet free electron.
[Ablace pevných látek využívající femtosekundového extrémně ultrafialového laseru na volných elektronech.]
Applied Physics Letters. Roč. 89, č. 24 (2006), 241909/1-241909/3. ISSN 0003-6951. E-ISSN 1077-3118
R&D Projects: GA MŠMT LC510; GA MŠMT(CZ) LC528; GA MŠMT 1P04LA235; GA MŠMT(CZ) 1K05026
Institutional research plan: CEZ:AV0Z10100523; CEZ:AV0Z40400503
Keywords : XUV laser, free-electron laser, radiation damage, materials ablation, Si, GaAs * free-electron laser * radiation damage * materials ablation * Si * GaAs
Subject RIV: BH - Optics, Masers, Lasers
Impact factor: 3.977, year: 2006
Permanent Link: http://hdl.handle.net/11104/0141803