Search results
- 1.0502820 - FZÚ 2019 RIV GB eng J - Journal Article
Hubáček, Tomáš - Hospodková, Alice - Kuldová, Karla - Oswald, Jiří - Pangrác, Jiří - Jarý, Vítězslav - Dominec, Filip - Slavická Zíková, Markéta - Hájek, František - Hulicius, Eduard - Vetushka, Aliaksi - Ledoux, G. - Dujardin, C. - Nikl, Martin
Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs.
CrystEngComm. Roč. 21, č. 2 (2019), s. 356-362. ISSN 1466-8033
R&D Projects: GA ČR(CZ) GA16-11769S; GA MŠMT(CZ) LO1603
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : InGaN * MOVPE * QW number
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.117, year: 2019
Method of publishing: Open access with time embargo
Permanent Link: http://hdl.handle.net/11104/0294704File Download Size Commentary Version Access 0502820.pdf 4 1.7 MB Author’s postprint open-access - 2.0496184 - FZÚ 2019 RIV PL eng A - Abstract
Vaněk, Tomáš - Hospodková, Alice - Hubáček, Tomáš - Kuldová, Karla - Oswald, Jiří - Pangrác, Jiří - Dominec, Filip - Zíková, Markéta - Vetushka, Aliaksi
Increasing scintillator active region thickness by InGaN/GaN QW number.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 151-151.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institutional support: RVO:68378271
Keywords : InGaN/GaN * QW number
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0289013