Search results
- 1.0569330 - FZÚ 2024 RIV NL eng J - Journal Article
Hospodková, Alice - Hájek, František - Hubáček, Tomáš - Gedeonová, Zuzana - Hubík, Pavel - Mareš, Jiří J. - Pangrác, Jiří - Dominec, Filip - Kuldová, Karla - Hulicius, Eduard
Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters.
Journal of Crystal Growth. Roč. 605, March (2023), č. článku 127061. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA ČR(CZ) GF22-28001K
Institutional support: RVO:68378271
Keywords : HEMT * GAN * metalorganic vapor phase epitaxy
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.8, year: 2022
Method of publishing: Limited access
https://doi.org/10.1016/j.jcrysgro.2022.127061
Permanent Link: https://hdl.handle.net/11104/0342034 - 2.0543533 - FZÚ 2022 RIV GB eng J - Journal Article
Hájek, František - Hospodková, Alice - Hubík, Pavel - Gedeonová, Zuzana - Hubáček, Tomáš - Pangrác, Jiří - Kuldová, Karla
Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design.
Semiconductor Science and Technology. Roč. 36, č. 7 (2021), č. článku 075016. ISSN 0268-1242. E-ISSN 1361-6641
R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : HEMT * GaN * metalorganic vapor phase epitaxy
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 2.048, year: 2021
Method of publishing: Open access with time embargo
Permanent Link: http://hdl.handle.net/11104/0320728File Download Size Commentary Version Access 0543533.pdf 1 1.1 MB Author’s postprint open-access - 3.0532847 - FZÚ 2021 RIV NL eng J - Journal Article
Hospodková, Alice - Hájek, František - Pangrác, Jiří - Slavická Zíková, Markéta - Hubáček, Tomáš - Kuldová, Karla - Oswald, Jiří - Vaněk, Tomáš - Vetushka, Aliaksi - Čížek, J. - Liedke, M.O. - Butterling, M. - Wagner, A.
A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures.
Journal of Crystal Growth. Roč. 536, Apr (2020), s. 1-6, č. článku 125579. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT LM2015087; GA TA ČR TH02010580; GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : quantum wells * defects * impurities * metalorganic vapor phase epitaxy * nitrides
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.797, year: 2020
Method of publishing: Limited access
https://doi.org/10.1016/j.jcrysgro.2020.125579
Permanent Link: http://hdl.handle.net/11104/0311234 - 4.0509851 - ÚFM 2020 RIV NL eng J - Journal Article
Lee, L.Y. - Frentrup, M. - Vacek, Petr - Massabuau, Fabien C. P. - Kappers, Menno J. - Wallis, David J. - Oliver, Rachel A.
Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates.
Journal of Crystal Growth. Roč. 524, OCT (2019), č. článku 125167. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT(CZ) EF16_027/0008056
Institutional support: RVO:68081723
Keywords : Atomic force microscopy * Nucleation * X-ray diffraction * Metalorganic vapor phase epitaxy * Nitrides * Semiconducting gallium compounds
OECD category: Electrical and electronic engineering
Impact factor: 1.632, year: 2019
Method of publishing: Limited access
https://www.sciencedirect.com/science/article/pii/S0022024819303823?via%3Dihub
Permanent Link: http://hdl.handle.net/11104/0300844 - 5.0505794 - FZÚ 2020 RIV NL eng J - Journal Article
Dominec, Filip - Hospodková, Alice - Hubáček, Tomáš - Zíková, Markéta - Pangrác, Jiří - Kuldová, Karla - Vetushka, Aliaksi - Hulicius, Eduard
Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties.
Journal of Crystal Growth. Roč. 507, Feb (2019), s. 246-250. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN quantum wells * GaN buffer layer * scintillators
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.632, year: 2019
Method of publishing: Limited access
https://doi.org/10.1016/j.jcrysgro.2018.11.025
Permanent Link: http://hdl.handle.net/11104/0297183File Download Size Commentary Version Access 0505794.pdf 5 1.1 MB Author’s postprint open-access - 6.0501495 - FZÚ 2019 JP eng A - Abstract
Hospodková, Alice - Dominec, Filip - Hubáček, Tomáš - Zíková, Markéta - Pangrác, Jiří - Oswald, Jiří - Kuldová, Karla - Vetushka, Aliaksi - Hulicius, Eduard
Suppressed contamination of InGaN/GaN MQW region by growing the buffer layer at lower temperature.
ICMOVPE XIX - Technical Digest. Nara: Japanese Association for Crystal Growth, 2018 - (Miyake, H.). s. 147-147
[19th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XIX. 03.06.2018-08.06.2018, Nara]
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : GaN buffer layer * scintillators * low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN QWs
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0293517 - 7.0456264 - FZÚ 2016 RIV NL eng J - Journal Article
Šimek, P. - Sedmidubský, D. - Klímová, K. - Mikulics, M. - Maryško, Miroslav - Veselý, M. - Jurek, Karel - Sofer, Z.
GaN:Co epitaxial layers grown by MOVPE.
Journal of Crystal Growth. Roč. 44, Mar (2015), 62-68. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR GA13-20507S
Institutional support: RVO:68378271
Keywords : doping * metalorganic vapor phase epitaxy * cobalt * gallium compounds * nitrides * magnetic materials spintronics
Subject RIV: CA - Inorganic Chemistry
Impact factor: 1.462, year: 2015
Permanent Link: http://hdl.handle.net/11104/0256820 - 8.0447827 - FZÚ 2016 RIV NL eng J - Journal Article
Vyskočil, Jan - Gladkov, Petar - Petříček, Václav - Hospodková, Alice - Pangrác, Jiří
Growth and properties of AIII BV QD structures for intermediate band solar cells.
Journal of Crystal Growth. Roč. 414, č. 172 (2015), s. 172-176. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR(CZ) GP14-21285P
Institutional support: RVO:68378271 ; RVO:67985882
Keywords : metalorganic vapor phase epitaxy * InAs/GaAs Quantum dots * GaAsSb Strain reducing layer * solar cells
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.462, year: 2015
Permanent Link: http://hdl.handle.net/11104/0249601 - 9.0433689 - FZÚ 2015 CH eng A - Abstract
Morávek, P. - Pangrác, Jiří - Fulem, M. - Hulicius, Eduard - Růžička, K.
Vapor pressures of (3-dimethylaminopropyl)dimethylindium, (t-butylimino)bis(diethylamino)tantalum cyclopentadienylide, and (t-butylimido)tris(ethylmethylamino)tantalum.
International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 7-7
[International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
Institutional support: RVO:68378271
Keywords : metalorganic vapor phase epitaxy * vapor pressure * static method * indium precursors * tantalum precursors
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0237855 - 10.0433688 - FZÚ 2015 CH eng A - Abstract
Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Zíková, Markéta - Oswald, Jiří - Komninou, Ph. - Hulicius, Eduard
Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy.
International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 14-14
[International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
R&D Projects: GA ČR(CZ) GP14-21285P; GA ČR GA13-15286S
Institutional support: RVO:68378271
Keywords : metalorganic vapor phase epitaxy * InAs/GaAs quantum dots * GaAsSb strain reducing layer * reflectance anisotropy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0237854