Search results
- 1.0585344 - FZÚ 2025 RIV CZ cze J - Journal Article
Vaněk, Tomáš - Hospodková, Alice - Blažek, K. - Hulicius, Eduard
Hybridní scintilační detektor, založený na vícenásobných kvantových jámách InGaN/GaN, připravených metodou MOVPE s vrstvami scintilátoru BGO.
[A hybrid detector based on MOVPE-grown InGaN/GaN multiple quantum wells with BGO scintillator layers.]
Československý časopis pro fyziku. Roč. 74, č. 1 (2024), s. 13-17. ISSN 0009-0700
R&D Projects: GA MŠMT(CZ) LTAIN19163; GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Research Infrastructure: CzechNanoLab - 90110
Institutional support: RVO:68378271
Keywords : scintilátory * BGO * GaN * MOVPE * InGaN/GaN
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Method of publishing: Limited access
https://ccf.fzu.cz/
Permanent Link: https://hdl.handle.net/11104/0353063 - 2.0585148 - FZÚ 2024 RIV CZ cze L - Prototype, f. module
Hubáček, Tomáš - Hospodková, Alice
Funkční vzorek Gfunk rychlého scintilátoru na bázi InGaN/GaN mnohonásobných kvantových jam.
[Functional sample - fast decay scintillator based on InGaN/GaN multiple quantum wells.]
Internal code: FW03010298-V22 ; 2022
Technical parameters: dominant fast decay component of photoluminescence with 0.5 ns time constant
Economic parameters: Výsledek je využíván příjemcem CRYTUR, s.r.o. (25296558), a spolupříjemci Fyzikální ústav AV ČR, v. v. i. (68378271), ekonomické parametry se neuvádí.
R&D Projects: GA TA ČR(CZ) FW03010298
Institutional support: RVO:68378271
Keywords : InGaN/GaN scintilator
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: https://hdl.handle.net/11104/0352883 - 3.0583049 - FZÚ 2024 RIV SK eng C - Conference Paper (international conference)
Vaněk, Tomáš - Hospodková, Alice - Blažek, K. - Hulicius, Eduard
Hybrid detector based on MOVPE grown InGaN/GaN MQW + BGO.
21. konference českých a slovenských fyziků - Proceedings. Košice: Slovak Physical Society, 2023 - (Džubinská, A.; Reiffers, M.), s. 49-52. ISBN 978-80-89855-21-6.
[Conference of Czech and Slovak Physicists /21./. Bratislava (SK), 04.09.2023-07.09.2023]
R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA MŠMT(CZ) EF16_019/0000760
Institutional support: RVO:68378271
Keywords : MOVPE InGaN/GaN * scintillator * detector
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://kis.cvt.stuba.sk/arl-stu/sk/detail-stu_us_cat-0106937-21st-Conference-of-Czech-and-Slovak-Physicists/?disprec=1&iset=2
Permanent Link: https://hdl.handle.net/11104/0351047 - 4.0576333 - ÚFM 2024 RIV US eng J - Journal Article
Ji, Y. - Frentrup, M. - Zhang, X. - Pongrácz, Jakub - Fairclough, S. M. - Liu, Y. - Zhu, T. - Oliver, Rachel A.
Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation.
Journal of Applied Physics. Roč. 134, č. 14 (2023), č. článku 145102. ISSN 0021-8979. E-ISSN 1089-7550
Institutional support: RVO:68081723
Keywords : InGaN * MQW * porosification * AFM * XRD * strain relaxation
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.2, year: 2022
Method of publishing: Open access
https://pubs.aip.org/aip/jap/article/134/14/145102/2916034/Porous-pseudo-substrates-for-InGaN-quantum-well
Permanent Link: https://hdl.handle.net/11104/0345962 - 5.0570390 - FZÚ 2024 RIV NL eng J - Journal Article
Hubáček, Tomáš - Kuldová, Karla - Gedeonová, Zuzana - Hájek, František - Košutová, Tereza - Banerjee, Swarnendu - Hubík, Pavel - Pangrác, Jiří - Vaněk, Tomáš - Hospodková, Alice
Impact of Ge doping on MOVPE grown InGaN layers.
Journal of Crystal Growth. Roč. 604, Feb (2023), č. článku 127043. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA ČR(CZ) GJ20-05497Y
Institutional support: RVO:68378271
Keywords : germanium * MOVPE * InGaN * nitrides * photoluminescence * doping
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.8, year: 2022
Method of publishing: Limited access
https://doi.org/10.1016/j.jcrysgro.2022.127043
Permanent Link: https://hdl.handle.net/11104/0341707 - 6.0568264 - FZÚ 2023 RIV DE eng A - Abstract
Batysta, Jan - Hospodková, Alice - Hubáček, Tomáš - Hájek, František - Kuldová, Karla
Compensation of strain in InGaN/GaN QWs by AlGaN layer.
Abstract book of the International Conference on Metalorganic Vapor Phase Epitaxy /20./ - ICMOVPE XX. Stuttgart: University of Stuttgart, 2022 - (Jetter, M.; Scholz, F.). s. 200-200
[International Conference on Metalorganic Vapor Phase Epitaxy ICMOVPE XX /20./. 10.07.2022-14.07.2022, Stuttgart]
R&D Projects: GA TA ČR(CZ) FW03010298
Institutional support: RVO:68378271
Keywords : MOVPE * InGaN/GaN * quantum wells * strain
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: https://hdl.handle.net/11104/0339593 - 7.0567278 - FZÚ 2023 RIV GB eng C - Conference Paper (international conference)
Buryi, Maksym - Hubáček, Tomáš - Hájek, František - Jarý, Vítězslav - Babin, Vladimir - Kuldová, Karla - Vaněk, Tomáš
Luminescence and scintillation properties of the Si doped InGaN/GaN multiple quantum wells.
Journal of Physics: Conference Series. Vol. 2413. Bristol: IOP Publishing, 2022, č. článku 012001. ISSN 1742-6588.
[DMSRE seminar: Development of Materials Science in Research and Education (DMSRE) /31./. Nová Lesná (SK), 05.09.2022-09.09.2022]
R&D Projects: GA ČR(CZ) GJ20-05497Y
Institutional support: RVO:68378271
Keywords : InGaN/GaN multiple quantum wells * Si doping * luminescence
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://iopscience.iop.org/article/10.1088/1742-6596/2413/1/012001
Permanent Link: https://hdl.handle.net/11104/0338546 - 8.0560116 - FZÚ 2023 RIV DE eng A - Abstract
Hubáček, Tomáš - Kuldová, Karla - Gedeonová, Zuzana - Hájek, František - Hubík, Pavel - Pangrác, Jiří - Oswald, Jiří - Hospodková, Alice
Effect of MOVPE growth conditions on germanium doped (In)GaN layers.
Book of Abstracts of the 20th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XX. Stuttgart: University of Stuttgart, 2022 - (Jetter, M.; Scholz, F.). s. 208-208
[International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XX /20./. 10.07.2022-14.07.2022, Stuttgart]
R&D Projects: GA MŠMT(CZ) LTAIN19163
Institutional support: RVO:68378271
Keywords : MOVPE * GaN * InGaN
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: https://hdl.handle.net/11104/0333147 - 9.0556260 - FZÚ 2023 RIV GB eng J - Journal Article
Stránská Matějová, J. - Hospodková, Alice - Košutová, T. - Hubáček, Tomáš - Hývl, Matěj - Holý, V.
V-pits formation in InGaN/GaN: influence of threading dislocations and indium content.
Journal of Physics D-Applied Physics. Roč. 55, č. 25 (2022), č. článku 255101. ISSN 0022-3727. E-ISSN 1361-6463
R&D Projects: GA MŠMT(CZ) LTAIN19163; GA MŠMT EF16_026/0008382
Grant - others:OP VVV - CARAT CZ.02.1.01/0.0/0.0/16_026/0008382
Research Infrastructure: CzechNanoLab - 90110
Institutional support: RVO:68378271
Keywords : V-pits * InGaN/GaN * dislocations * x-ray diffraction * diffuse scattering * XRD * RSM
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.4, year: 2022
Method of publishing: Open access with time embargo
https://doi.org/10.1088/1361-6463/ac5c1a
Permanent Link: http://hdl.handle.net/11104/0330551File Download Size Commentary Version Access 0556260.pdf 4 11.9 MB Author’s postprint open-access - 10.0542725 - FZÚ 2022 RIV NL eng J - Journal Article
Hájek, František - Hospodková, Alice - Hubáček, Tomáš - Oswald, Jiří - Pangrác, Jiří - Dominec, Filip - Horešovský, Robert - Kuldová, Karla
Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells.
Journal of Luminescence. Roč. 236, Aug (2021), č. článku 118127. ISSN 0022-2313. E-ISSN 1872-7883
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA TA ČR(CZ) FW03010298
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : nitrides * impurity * SIMS * InGaN/GaN
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 4.171, year: 2021
Method of publishing: Open access with time embargo
Permanent Link: http://hdl.handle.net/11104/0320090File Download Size Commentary Version Access 0542725.pdf 4 1 MB Author’s postprint open-access