Search results
- 1.0505794 - FZÚ 2020 RIV NL eng J - Journal Article
Dominec, Filip - Hospodková, Alice - Hubáček, Tomáš - Zíková, Markéta - Pangrác, Jiří - Kuldová, Karla - Vetushka, Aliaksi - Hulicius, Eduard
Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties.
Journal of Crystal Growth. Roč. 507, Feb (2019), s. 246-250. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN quantum wells * GaN buffer layer * scintillators
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.632, year: 2019
Method of publishing: Limited access
https://doi.org/10.1016/j.jcrysgro.2018.11.025
Permanent Link: http://hdl.handle.net/11104/0297183File Download Size Commentary Version Access 0505794.pdf 5 1.1 MB Author’s postprint open-access - 2.0502822 - FZÚ 2019 RIV NL eng J - Journal Article
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Hubáček, Tomáš - Oswald, Jiří - Kuldová, Karla - Hájek, František - Ledoux, G. - Dujardin, C.
Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties.
Journal of Crystal Growth. Roč. 506, Jan (2019), s. 8-13. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR(CZ) GA16-11769S; GA MŠMT(CZ) LO1603
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : low dimensional structures * MOVPE * InGaN/GaN quantum wells * luminescent defect band
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.632, year: 2019
Method of publishing: Open access with time embargo
Permanent Link: http://hdl.handle.net/11104/0294706File Download Size Commentary Version Access 0502822.pdf 4 1.5 MB Author’s postprint open-access - 3.0501534 - FZÚ 2019 GR eng A2 - Proceedings Abstract
Dominec, Filip - Kretková, Tereza - Kuldová, Karla - Hájek, František - Horešovský, Robert - Komninou, P. (ed.) - Hospodková, Alice
Cathodoluminescence of v-pits in InGaN/GaN heterostructure: dependence on QW number and electron penetration depth.
Proceedings of the International Conference on Extended Defects in Semiconductors /19./. Thessaloniki: Aristotle University of Thessaloniki, 2018. P-2-P-2. ISSN N.
[International Conference on Extended Defects in Semiconductors /19./ EDS2018. 24.06.2018-29.06.2018, Thessaloniki]
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institutional support: RVO:68378271
Keywords : low dimensional structures * MOVPE * InGaN/GaN quantum wells * luminescent defect band
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0293552 - 4.0501501 - FZÚ 2019 GR eng A2 - Proceedings Abstract
Kretková, Tereza - Dominec, Filip - Kuldová, Karla - Hájek, František - Novotný, Radek - Hospodková, Alice
Impact of dust contamination on epitaxial growth morphology, cathodoluminescence and photoluminescence.
Proceedings of the International Conference on Extended Defects in Semiconductors /19./. Thessaloniki: Aristotle University of Thessaloniki, 2018. P-11-P-11. ISSN N.
[International Conference on Extended Defects in Semiconductors /19./ EDS2018. 24.06.2018-29.06.2018, Thessaloniki]
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institutional support: RVO:68378271
Keywords : low dimensional structures * MOVPE * InGaN/GaN quantum wells * luminescent defect band
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0293553 - 5.0501482 - FZÚ 2019 JP eng A - Abstract
Zíková, Markéta - Hospodková, Alice - Hubáček, Tomáš - Pangrác, Jiří - Oswald, Jiří - Hájek, František
Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties.
ICMOVPE XIX - Technical Digest. Nara: Japanese Association for Crystal Growth, 2018 - (Miyake, H.). s. 83-83
[19th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XIX. 03.06.2018-08.06.2018, Nara]
R&D Projects: GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : low dimensional structures * InGaN/GaN quantum wells * MOVPE * luminescent defect band
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0293514