Search results
- 1.0539244 - FZÚ 2021 RIV CZ eng A - Abstract
Hulicius, Eduard - Dominec, Filip - Hospodková, Alice - Pangrác, Jiří - Bábor, P.
SIMS studies of MOVPE GaN/InGaN scintilator nano-structures.
Proceedings of Abstracts - Nanocon 2019. Ostrava: Tanger Ltd., 2019 - (Shrbená-Váňová, J.). s. 81-81. ISBN 978-80-87294-94-9.
[Nanocon 2019 International Conference on Nanomaterials - Research & Application /11./. 16.10.2019-18.10.2019, Brno]
R&D Projects: GA ČR(CZ) GA16-11769S; GA MŠMT(CZ) LO1603; GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : SIMS * InGaN/GaN heterostructure * scintillators * MOVPE
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0316917 - 2.0520194 - FZÚ 2020 RIV cze P - Patent Document
Hospodková, Alice - Zíková, Markéta - Blažek, K.
Scintilační detektor pro detekci ionizujícího záření.
[Scintillation detector for the detection of ionizing radiation.]
2019. Owner: Fyzikální ústav AV ČR, v. v. i. Date of the patent acceptance: 06.02.2019. Patent Number: 307721
R&D Projects: GA TA ČR TH02010580
Institutional support: RVO:68378271
Keywords : InGaN/GaN heterostructure * scintillators * detectors
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://isdv.upv.cz/doc/FullFiles/Patents/FullDocuments/307/307721.pdf
Permanent Link: http://hdl.handle.net/11104/0304880 - 3.0519846 - FZÚ 2020 RIV cze P - Patent Document
Hospodková, Alice - Hubáček, Tomáš
Způsob výroby epitaxní struktury s InGaN kvantovými jamami.
[Method of producing an epitaxial structure with InGaN quantum wells.]
2019. Owner: Fyzikální ústav AV ČR, v. v. i. Date of the patent acceptance: 18.09.2019. Patent Number: 308024
R&D Projects: GA TA ČR TH02010580
Institutional support: RVO:68378271
Keywords : InGaN/GaN heterostructure * scintillators * detectors
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://isdv.upv.cz/doc/FullFiles/Patents/FullDocuments/308/308024.pdf
Permanent Link: http://hdl.handle.net/11104/0304831 - 4.0496860 - FZÚ 2019 CZ eng A - Abstract
Hospodková, Alice - Hubáček, Tomáš - Pangrác, Jiří - Oswald, Jiří - Hývl, Matěj - Zíková, Markéta - Hulicius, Eduard
Role of V-pits in the InGaN/GaN multiple quantum well structures.
NANOCON 2017 - Book of Abstracts. Ostrava: Tanger Ltd, 2017 - (Shrbená, J.). s. 81-81. ISBN 978-80-87294-78-9.
[NANOCON 2017. International Conference on Nanomaterials - Research & Application /9./. 18.10.2017-20.10.2017, Brno]
R&D Projects: GA ČR GA16-11769S; GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : InGaN/GaN heterostructure * scintillators * photoluminescence * MOVPE
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0289480 - 5.0476198 - FZÚ 2018 RIV US eng J - Journal Article
Hospodková, Alice - Oswald, Jiří - Zíková, Markéta - Pangrác, Jiří - Kuldová, Karla - Blažek, K. - Ledoux, G. - Dujardin, C. - Nikl, Martin
On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure.
Journal of Applied Physics. Roč. 121, č. 21 (2017), 1-8, č. článku 214505. ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA MŠMT LO1603; GA ČR GA16-15569S
EU Projects: European Commission(XE) CZ.2.16/3.1.00/24510; European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : InGaN/GaN heterostructure * scintillators * photoluminescence * cathodoluminescence
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 2.176, year: 2017
Permanent Link: http://hdl.handle.net/11104/0272721File Download Size Commentary Version Access 0476198.pdf 6 1.9 MB Publisher’s postprint open-access - 6.0470001 - FZÚ 2017 RIV cze P - Patent Document
Hospodková, Alice - Blažek, K. - Hulicius, Eduard - Touš, Jan - Nikl, Martin
Scintilační detektor pro detekci ionizujícího záření.
[Scintillation detector for detecting ionizing radiation.]
2016. Owner: Fyzikální ústav AV ČR, v. v. i - CRYTUR, spol.s r.o. Date of the patent acceptance: 18.05.2016. Patent Number: 306026
Institutional support: RVO:68378271
Keywords : InGaN/GaN heterostructure * scintillators
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://isdv.upv.cz/doc/FullFiles/Patents/FullDocuments/306/306026.pdf
Permanent Link: http://hdl.handle.net/11104/0267745 - 7.0466086 - FZÚ 2017 US eng A - Abstract
Hospodková, Alice - Oswald, Jiří - Kuldová, Karla - Hubáček, Tomáš - Pangrác, Jiří
Yellow band luminescence suppression for fast nitride scintillator structures.
ICMOVPE XVIII. Program and Exhibit Guide. Warrendale: MRS - Conference Services, 2016. s. 49
R&D Projects: GA ČR(CZ) GP14-21285P; GA ČR GA16-11769S; GA MŠMT LO1603
Institutional support: RVO:68378271
Keywords : MOVPE * InGaN/GaN heterostructure * scintillators * yellow band
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0264502