Search results

  1. 1.
    0585344 - FZÚ 2025 RIV CZ cze J - Journal Article
    Vaněk, Tomáš - Hospodková, Alice - Blažek, K. - Hulicius, Eduard
    Hybridní scintilační detektor, založený na vícenásobných kvantových jámách InGaN/GaN, připravených metodou MOVPE s vrstvami scintilátoru BGO.
    [A hybrid detector based on MOVPE-grown InGaN/GaN multiple quantum wells with BGO scintillator layers.]
    Československý časopis pro fyziku. Roč. 74, č. 1 (2024), s. 13-17. ISSN 0009-0700
    R&D Projects: GA MŠMT(CZ) LTAIN19163; GA MŠMT(CZ) EF16_019/0000760
    Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
    Research Infrastructure: CzechNanoLab - 90110
    Institutional support: RVO:68378271
    Keywords : scintilátory * BGO * GaN * MOVPE * InGaN/GaN
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Method of publishing: Limited access
    https://ccf.fzu.cz/
    Permanent Link: https://hdl.handle.net/11104/0353063
     
     
  2. 2.
    0585148 - FZÚ 2024 RIV CZ cze L - Prototype, f. module
    Hubáček, Tomáš - Hospodková, Alice
    Funkční vzorek Gfunk rychlého scintilátoru na bázi InGaN/GaN mnohonásobných kvantových jam.
    [Functional sample - fast decay scintillator based on InGaN/GaN multiple quantum wells.]
    Internal code: FW03010298-V22 ; 2022
    Technical parameters: dominant fast decay component of photoluminescence with 0.5 ns time constant
    Economic parameters: Výsledek je využíván příjemcem CRYTUR, s.r.o. (25296558), a spolupříjemci Fyzikální ústav AV ČR, v. v. i. (68378271), ekonomické parametry se neuvádí.
    R&D Projects: GA TA ČR(CZ) FW03010298
    Institutional support: RVO:68378271
    Keywords : InGaN/GaN scintilator
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Permanent Link: https://hdl.handle.net/11104/0352883
     
     
  3. 3.
    0583049 - FZÚ 2024 RIV SK eng C - Conference Paper (international conference)
    Vaněk, Tomáš - Hospodková, Alice - Blažek, K. - Hulicius, Eduard
    Hybrid detector based on MOVPE grown InGaN/GaN MQW + BGO.
    21. konference českých a slovenských fyziků - Proceedings. Košice: Slovak Physical Society, 2023 - (Džubinská, A.; Reiffers, M.), s. 49-52. ISBN 978-80-89855-21-6.
    [Conference of Czech and Slovak Physicists /21./. Bratislava (SK), 04.09.2023-07.09.2023]
    R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA MŠMT(CZ) EF16_019/0000760
    Institutional support: RVO:68378271
    Keywords : MOVPE InGaN/GaN * scintillator * detector
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    https://kis.cvt.stuba.sk/arl-stu/sk/detail-stu_us_cat-0106937-21st-Conference-of-Czech-and-Slovak-Physicists/?disprec=1&iset=2
    Permanent Link: https://hdl.handle.net/11104/0351047
     
     
  4. 4.
    0568264 - FZÚ 2023 RIV DE eng A - Abstract
    Batysta, Jan - Hospodková, Alice - Hubáček, Tomáš - Hájek, František - Kuldová, Karla
    Compensation of strain in InGaN/GaN QWs by AlGaN layer.
    Abstract book of the International Conference on Metalorganic Vapor Phase Epitaxy /20./ - ICMOVPE XX. Stuttgart: University of Stuttgart, 2022 - (Jetter, M.; Scholz, F.). s. 200-200
    [International Conference on Metalorganic Vapor Phase Epitaxy ICMOVPE XX /20./. 10.07.2022-14.07.2022, Stuttgart]
    R&D Projects: GA TA ČR(CZ) FW03010298
    Institutional support: RVO:68378271
    Keywords : MOVPE * InGaN/GaN * quantum wells * strain
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Permanent Link: https://hdl.handle.net/11104/0339593
     
     
  5. 5.
    0567278 - FZÚ 2023 RIV GB eng C - Conference Paper (international conference)
    Buryi, Maksym - Hubáček, Tomáš - Hájek, František - Jarý, Vítězslav - Babin, Vladimir - Kuldová, Karla - Vaněk, Tomáš
    Luminescence and scintillation properties of the Si doped InGaN/GaN multiple quantum wells.
    Journal of Physics: Conference Series. Vol. 2413. Bristol: IOP Publishing, 2022, č. článku 012001. ISSN 1742-6588.
    [DMSRE seminar: Development of Materials Science in Research and Education (DMSRE) /31./. Nová Lesná (SK), 05.09.2022-09.09.2022]
    R&D Projects: GA ČR(CZ) GJ20-05497Y
    Institutional support: RVO:68378271
    Keywords : InGaN/GaN multiple quantum wells * Si doping * luminescence
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    https://iopscience.iop.org/article/10.1088/1742-6596/2413/1/012001
    Permanent Link: https://hdl.handle.net/11104/0338546
     
     
  6. 6.
    0556260 - FZÚ 2023 RIV GB eng J - Journal Article
    Stránská Matějová, J. - Hospodková, Alice - Košutová, T. - Hubáček, Tomáš - Hývl, Matěj - Holý, V.
    V-pits formation in InGaN/GaN: influence of threading dislocations and indium content.
    Journal of Physics D-Applied Physics. Roč. 55, č. 25 (2022), č. článku 255101. ISSN 0022-3727. E-ISSN 1361-6463
    R&D Projects: GA MŠMT(CZ) LTAIN19163; GA MŠMT EF16_026/0008382
    Grant - others:OP VVV - CARAT CZ.02.1.01/0.0/0.0/16_026/0008382
    Research Infrastructure: CzechNanoLab - 90110
    Institutional support: RVO:68378271
    Keywords : V-pits * InGaN/GaN * dislocations * x-ray diffraction * diffuse scattering * XRD * RSM
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 3.4, year: 2022
    Method of publishing: Open access with time embargo
    https://doi.org/10.1088/1361-6463/ac5c1a
    Permanent Link: http://hdl.handle.net/11104/0330551
    FileDownloadSizeCommentaryVersionAccess
    0556260.pdf411.9 MBAuthor’s postprintopen-access
     
     
  7. 7.
    0542725 - FZÚ 2022 RIV NL eng J - Journal Article
    Hájek, František - Hospodková, Alice - Hubáček, Tomáš - Oswald, Jiří - Pangrác, Jiří - Dominec, Filip - Horešovský, Robert - Kuldová, Karla
    Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells.
    Journal of Luminescence. Roč. 236, Aug (2021), č. článku 118127. ISSN 0022-2313. E-ISSN 1872-7883
    R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA TA ČR(CZ) FW03010298
    Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
    Institutional support: RVO:68378271
    Keywords : nitrides * impurity * SIMS * InGaN/GaN
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 4.171, year: 2021
    Method of publishing: Open access with time embargo
    Permanent Link: http://hdl.handle.net/11104/0320090
    FileDownloadSizeCommentaryVersionAccess
    0542725.pdf41 MBAuthor’s postprintopen-access
     
     
  8. 8.
    0539244 - FZÚ 2021 RIV CZ eng A - Abstract
    Hulicius, Eduard - Dominec, Filip - Hospodková, Alice - Pangrác, Jiří - Bábor, P.
    SIMS studies of MOVPE GaN/InGaN scintilator nano-structures.
    Proceedings of Abstracts - Nanocon 2019. Ostrava: Tanger Ltd., 2019 - (Shrbená-Váňová, J.). s. 81-81. ISBN 978-80-87294-94-9.
    [Nanocon 2019 International Conference on Nanomaterials - Research & Application /11./. 16.10.2019-18.10.2019, Brno]
    R&D Projects: GA ČR(CZ) GA16-11769S; GA MŠMT(CZ) LO1603; GA MŠMT(CZ) EF16_019/0000760
    Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
    Institutional support: RVO:68378271
    Keywords : SIMS * InGaN/GaN heterostructure * scintillators * MOVPE
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Permanent Link: http://hdl.handle.net/11104/0316917
     
     
  9. 9.
    0520194 - FZÚ 2020 RIV cze P - Patent Document
    Hospodková, Alice - Zíková, Markéta - Blažek, K.
    Scintilační detektor pro detekci ionizujícího záření.
    [Scintillation detector for the detection of ionizing radiation.]
    2019. Owner: Fyzikální ústav AV ČR, v. v. i. Date of the patent acceptance: 06.02.2019. Patent Number: 307721
    R&D Projects: GA TA ČR TH02010580
    Institutional support: RVO:68378271
    Keywords : InGaN/GaN heterostructure * scintillators * detectors
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    https://isdv.upv.cz/doc/FullFiles/Patents/FullDocuments/307/307721.pdf
    Permanent Link: http://hdl.handle.net/11104/0304880
     
     
  10. 10.
    0519846 - FZÚ 2020 RIV cze P - Patent Document
    Hospodková, Alice - Hubáček, Tomáš
    Způsob výroby epitaxní struktury s InGaN kvantovými jamami.
    [Method of producing an epitaxial structure with InGaN quantum wells.]
    2019. Owner: Fyzikální ústav AV ČR, v. v. i. Date of the patent acceptance: 18.09.2019. Patent Number: 308024
    R&D Projects: GA TA ČR TH02010580
    Institutional support: RVO:68378271
    Keywords : InGaN/GaN heterostructure * scintillators * detectors
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    https://isdv.upv.cz/doc/FullFiles/Patents/FullDocuments/308/308024.pdf
    Permanent Link: http://hdl.handle.net/11104/0304831
     
     

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