Search results
- 1.0572001 - FZÚ 2024 RIV US eng J - Journal Article
Hospodková, Alice - Hájek, František - Hubáček, Tomáš - Gedeonová, Zuzana - Hubík, Pavel - Hývl, Matěj - Pangrác, Jiří - Dominec, Filip - Košutová, Tereza
Electron transport properties in high electron mobility transistor structures improved by V-Pit formation on the AlGaN/GaN interface.
ACS Applied Materials and Interfaces. Roč. 15, č. 15 (2023), s. 19646-19652. ISSN 1944-8244. E-ISSN 1944-8252
R&D Projects: GA MŠMT(CZ) LTAIN19163; GA ČR(CZ) GF22-28001K; GA MŠMT LM2023051
Institutional support: RVO:68378271
Keywords : HEMT * GaN * AlGaN * metal-organic vapor phase epitaxy * dislocations * electron mobility
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 9.5, year: 2022
Method of publishing: Open access
Permanent Link: https://hdl.handle.net/11104/0342845File Download Size Commentary Version Access 0572001.pdf 0 4.8 MB CC Licence Publisher’s postprint open-access - 2.0569330 - FZÚ 2024 RIV NL eng J - Journal Article
Hospodková, Alice - Hájek, František - Hubáček, Tomáš - Gedeonová, Zuzana - Hubík, Pavel - Mareš, Jiří J. - Pangrác, Jiří - Dominec, Filip - Kuldová, Karla - Hulicius, Eduard
Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters.
Journal of Crystal Growth. Roč. 605, March (2023), č. článku 127061. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA ČR(CZ) GF22-28001K
Institutional support: RVO:68378271
Keywords : HEMT * GAN * metalorganic vapor phase epitaxy
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.8, year: 2022
Method of publishing: Limited access
https://doi.org/10.1016/j.jcrysgro.2022.127061
Permanent Link: https://hdl.handle.net/11104/0342034 - 3.0561007 - FZÚ 2023 RIV CZ eng C - Conference Paper (international conference)
Hulicius, Eduard - Hájek, František - Hospodková, Alice - Hubík, Pavel - Gedeonová, Zuzana - Hubáček, Tomáš - Pangrác, Jiří - Kuldová, Karla
General overview of GaN devices and transport properties of AlGaN/GaN HEMT structures - impact of dislocation density and improved design.
NANOCON 2021 - Conference proceedings. Ostrava: Tanger Ltd., 2021, s. 17-22. ISBN 978-80-88365-00-6. ISSN 2694-930X.
[International Conference on Nanomaterials - Research & Application /13./ NANOCON. Brno (CZ), 20.10.2021-22.10.2021]
R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : GaN devices * HEMT * MOVPE epitaxy * dislocation
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://www.confer.cz/nanocon/2021/4309-general-over-view-of-gan-devices-and-transport-properties-of-algan-gan-hemt-structures-impact-of-dislocation-density-and-improved-design
Permanent Link: https://hdl.handle.net/11104/0333759 - 4.0559035 - FZÚ 2023 RIV SK eng C - Conference Paper (international conference)
Zehetner, J. - Vanko, G. - Dohnal, F. - Izsák, T. - Držík, M. - Kromka, Alexander
Recent challenges in micromachining of wide-bandgap materials and fabrication of MEMS for harsh environments.
Proceedings of ADEPT - ADEPT 2022. Žilina: University of Žilina, 2022 - (Feiler, M.; Ziman, M.; Kováčová, S.; Kováč, jr., J.), s. 7-12. ISBN 978-80-554-1884-1.
[10th International Conference on Advances in Electronic and Photonic Technologies - ADEPT 2022. Tatranská Lomnica (SK), 20.06.2022-24.06.2022]
R&D Projects: GA MŠMT(CZ) 8X20035
Institutional support: RVO:68378271
Keywords : harsh environment * diamond * SiC * MEMS * HEMT * laser ablation
OECD category: Materials engineering
Permanent Link: https://hdl.handle.net/11104/0332450 - 5.0543533 - FZÚ 2022 RIV GB eng J - Journal Article
Hájek, František - Hospodková, Alice - Hubík, Pavel - Gedeonová, Zuzana - Hubáček, Tomáš - Pangrác, Jiří - Kuldová, Karla
Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design.
Semiconductor Science and Technology. Roč. 36, č. 7 (2021), č. článku 075016. ISSN 0268-1242. E-ISSN 1361-6641
R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : HEMT * GaN * metalorganic vapor phase epitaxy
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 2.048, year: 2021
Method of publishing: Open access with time embargo
Permanent Link: http://hdl.handle.net/11104/0320728File Download Size Commentary Version Access 0543533.pdf 1 1.1 MB Author’s postprint open-access - 6.0537995 - FZÚ 2021 RIV SK eng C - Conference Paper (international conference)
Hospodková, Alice - Hájek, František - Hubáček, Tomáš - Oswald, Jiří - Dominec, Filip - Kuldová, Karla
Nitride semiconductors - properties and applications.
20th Conference of Czech and Slovak Physicists Proceedings. Košice: Slovak Physical Society, Czech Physical Society, 2020 - (Džubinská, A.; Reiffers, M.), s. 32-36. ISBN 978-80-89855-13-1.
[Conference of Czech and Slovak Physicists /20./. Prague (CZ), 07.09.2020-10.09.2020]
R&D Projects: GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : nitride semiconductors * applications * LED * HEMT
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0315824 - 7.0522076 - FZÚ 2020 RIV CZ eng C - Conference Paper (international conference)
Hulicius, Eduard - Kuldová, Karla - Hospodková, Alice - Pangrác, Jiří - Dominec, Filip - Humlíček, J. - Pelant, Ivan - Cibulka, Ondřej - Herynková, Kateřina
MOVPE GaN/AlGaN HEMT nano-structures.
NANOCON 2018 : Conference Proceedings of the International Conference on Nanomaterials - Research & Application /10./. Ostrava: Tanger Ltd., 2019 - (Shrbená, J.), s. 30-35. ISBN 978-80-87294-89-5.
[NANOCON 2018 -International Conference on Nanomaterials - Research and Application /10./. Brno (CZ), 17.10.2018-19.10.2018]
R&D Projects: GA TA ČR TH02010014; GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : GaN * MOVPE * HEMT
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0306581 - 8.0519848 - FZÚ 2020 RIV cze P - Patent Document
Hospodková, Alice - Dominec, Filip
Epitaxní vícevrstvá struktura pro tranzistory s vysokou pohyblivostí elektronů na bázi GaN a tranzistor obsahující tuto strukturu.
[Epitaxial multilayer structure for GaN-based high electron mobility transistors and a transistor containing this structure.]
2019. Owner: Fyzikální ústav AV ČR, v. v. i. Date of the patent acceptance: 25.07.2019. Patent Number: 307942
R&D Projects: GA TA ČR TH02010014
Institutional support: RVO:68378271
Keywords : HEMT * GaN * AlGaN
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://isdv.upv.cz/doc/FullFiles/Patents/FullDocuments/307/307942.pdf
Permanent Link: http://hdl.handle.net/11104/0304832 - 9.0485338 - FZÚ 2018 RIV SK eng C - Conference Paper (international conference)
Hulicius, Eduard - Gregušová, D. - Hospodková, Alice - Pangrác, Jiří - Stoklas, R. - Pohorelec, O. - Novák, J. - Heuken, M.
Preparation and measurement of GaN based HEMT structures.
Extended Abstract Book of international conference Progress in Applied Surface - SURFINT-SREN V. Bratislava: Comenius University, 2017 - (Pinčík, E.), s. 56-57. ISBN 978-80-2234411-1.
[Progress in Applied Surface, Interface and Thin Film Science 2017. Florence (IT), 20.11.2017-23.11.2017]
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR GA16-11769S
Grant - others:AV ČR(CZ) SAV-16-21
Program: Bilaterální spolupráce
Institutional support: RVO:68378271
Keywords : GaN * AlGaN * heterostructure * HEMT * MOVPE
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0280404 - 10.0479022 - FZÚ 2018 SK eng A - Abstract
Hulicius, Eduard - Gregušová, D. - Pohorelec, O. - Stoklas, R. - Hospodková, Alice - Pangrác, Jiří - Novák, J. - Heuken, M.
Preparation and measurement of GaN based HEMT structures.
Zborník abstraktov. 19. konferencia slovenských a českých fyzikov. Zvolen: Slovenská fyzikálna společnost´, 2017.
[Konferencia slovenských a českých fyzikov /19./. 04.09.2017-07.09.2017, Prešov]
Grant - others:AV ČR(CZ) SAV-16-21
Program: Bilaterální spolupráce
Institutional support: RVO:68378271
Keywords : MOVPE * HEMT * GaN * AlGaN
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0275072