Search results
- 1.0520192 - FZÚ 2020 RIV cze P - Patent Document
Hospodková, Alice - Zíková, Markéta
Vícevrstvá polovodičová struktura pro fotoelektrická zařízení.
[Multilayer semiconductor structure for photoelectric devices.]
2019. Owner: Fyzikální ústav AV ČR, v. v. i. Date of the patent acceptance: 25.07.2019. Patent Number: 307941
R&D Projects: GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : quantum dots * InAs * GaAsSb
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://isdv.upv.cz/doc/FullFiles/Patents/FullDocuments/307/307941.pdf
Permanent Link: http://hdl.handle.net/11104/0304875 - 2.0484348 - FZÚ 2018 RIV GB eng J - Journal Article
Hospodková, Alice - Vyskočil, Jan - Zíková, Markéta - Oswald, Jiří - Pangrác, Jiří - Petříček, Otto
GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD.
Materials Research Express. Roč. 4, č. 2 (2017), s. 1-8, č. článku 025502. E-ISSN 2053-1591
R&D Projects: GA ČR(CZ) GP14-21285P; GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : GaAsSb * InAs * InGaAs * quantum dot * solar cells * MOVPE
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.151, year: 2017
Permanent Link: http://hdl.handle.net/11104/0279501 - 3.0474050 - FZÚ 2018 RIV NL eng J - Journal Article
Vyskočil, Jan - Hospodková, Alice - Petříček, Otto - Pangrác, Jiří - Zíková, Markéta - Oswald, Jiří - Vetushka, Aliaksi
GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications.
Journal of Crystal Growth. Roč. 464, Apr (2017), s. 64-68. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR(CZ) GP14-21285P; GA MŠMT LO1603
Institutional support: RVO:68378271
Keywords : InAs * GaAsSb * InGaAs * quantum dot * solar cells
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.742, year: 2017
Permanent Link: http://hdl.handle.net/11104/0271148 - 4.0474047 - FZÚ 2018 RIV NL eng J - Journal Article
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hulicius, Eduard
Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications.
Journal of Crystal Growth. Roč. 464, Apr (2017), s. 59-63. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT LO1603
Institutional support: RVO:68378271
Keywords : MOVPE * quantum dot * strain reducing layer * InAs * GaAsSb * InGaAs
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.742, year: 2017
Permanent Link: http://hdl.handle.net/11104/0271146 - 5.0466110 - FZÚ 2017 US eng A - Abstract
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hulicius, Eduard
Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications.
ICMOVPE XVIII. Program and Exhibit Guide. Warrendale: MRS - Conference Services, 2016. s. 75
R&D Projects: GA MŠMT LO1603
Institutional support: RVO:68378271
Keywords : InAs * GaAsSb * InGaAs * quantum dot * strain reducing layer * MOVPE
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0264510 - 6.0466021 - FZÚ 2017 US eng A - Abstract
Vyskočil, Jan - Hospodková, Alice - Zíková, Markéta - Oswald, Jiří - Pangrác, Jiří - Petříček, Otto - Hulicius, Eduard
GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications.
ICMOVPE XVIII. Program and Exhibit Guide. Warrendale: MRS - Conference Services, 2016 - (Biefeld, R.). s. 44-44
R&D Projects: GA ČR(CZ) GP14-21285P
Institutional support: RVO:68378271
Keywords : InAs * GaAsSb * InGaAs * quantum dot * solar cells
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0264476 - 7.0464517 - FZÚ 2017 CZ eng D - Thesis
Zíková, Markéta
Band structure engineering of InAs/GaAs quantum dots.
České vysoké učení technické v Praze, Fakulta jaderná a fyzikálně inženýrská. Defended: Praha. - Praha: ČVUT, 2016. 108 s.
R&D Projects: GA ČR GA13-15286S; GA ČR GAP102/10/1201; GA ČR(CZ) GP14-21285P; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : semiconductor * quantum dot * strain reducing layer * MOVPE * InAs * GaAs * InGaAs * GaAsSb
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0263399 - 8.0463746 - FZÚ 2017 RIV DE eng A - Abstract
Hospodková, Alice - Oswald, Jiří - Pangrác, Jiří - Zíková, Markéta - Vyskočil, Jan - Kuldová, Karla - Melichar, Karel - Hubáček, Tomáš - Walachová, J. - Vaniš, J. - Křápek, V. - Humlíček, J. - Nikl, Martin - Pacherová, Oliva - Brůža, P. - Pánek, D. - Foltynski, B. - Oeztuerk, M. - Heuken, M. - Hulicius, Eduard
Nanostructures grown by MOVPE InAs/InGaAs/Ga(Sb)As quantum dot and GaN/InGaN quantum well structures.
GCCCG-1/DKT2016. Dresden: TU Dresden, 2016. s. 38.
[German Czechoslovak Conference on Crystal Growth (GCCCG-1) /1./. 16.03.2016-18.03.2016, Dresden]
R&D Projects: GA ČR GA13-15286S; GA ČR(CZ) GP14-21285P; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : MOVPE * InAs quantum dot * GaAsSb SRL * GaInN quantum well * GaN * GaAs
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0262837 - 9.0458379 - FZÚ 2017 RIV NL eng J - Journal Article
Hospodková, Alice - Oswald, Jiří - Pangrác, Jiří - Kuldová, Karla - Zíková, Markéta - Vyskočil, Jan - Hulicius, Eduard
Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum dot structures.
Physica B-Condensed Matter. Roč. 480, Jan (2016), 14-22. ISSN 0921-4526. E-ISSN 1873-2135
R&D Projects: GA ČR GA13-15286S; GA ČR(CZ) GP14-21285P; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : quantum dot * band alignment * InAs/GaAs * GaAsSb * MOVPE * luminescence
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.405, year: 2016
Permanent Link: http://hdl.handle.net/11104/0258645 - 10.0455033 - FZÚ 2016 RIV SE eng C - Conference Paper (international conference)
Vyskočil, Jan - Zíková, Markéta - Hospodková, Alice - Oswald, Jiří - Petříček, Otto - Pangrác, Jiří
Intermediate band solar cell structures grown by MOVPE.
EWMOVPE XVI - 16th European Workshop on Metalorganic Vapor Phase Epitaxy. Lund: Nanometer Structure Consortium, 2015 - (Ghalamestani, S.; Lundfald, L.), s. 191-194
[EWMOVPE XVI - 16th European Workshop on Metalorganic Vapor Phase Epitaxy. Lund (SE), 07.06.2015-10.06.2015]
R&D Projects: GA ČR(CZ) GP14-21285P
Institutional support: RVO:68378271
Keywords : InAs * GaAsSb * quantum dot * intermediate band solar cells
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0255685