0523535 - ÚFE 2020 RIV US eng C - Conference Paper (international conference)
Tiagulskyi, Stanislav - Yatskiv, Roman - Faitová, Hana - Vaniš, Jan - Grym, Jan
Homogeneous Resistive Switching in Individual ZnO Nanorod p-n Junctions.
International Semiconductor Conference (CAS 2019). New York: IEEE, 2019 - (Brezeanu, G.), s. 289-292. ISBN 978-1-7281-1888-8. ISSN 1545-827X.
[42nd International Semiconductor Conference (CAS). Sinaia (RO), 09.10.2019-11.10.2019]
R&D Projects: GA ČR(CZ) GA17-00546S; GA ČR(CZ) GA17-00355S
Institutional support: RVO:67985882
Keywords : Nanoprobe I-V * Nanoscale heterojunctions * FIB
OECD category: Electrical and electronic engineering
Permanent Link: http://hdl.handle.net/11104/0307889
Tiagulskyi, Stanislav - Yatskiv, Roman - Faitová, Hana - Vaniš, Jan - Grym, Jan
Homogeneous Resistive Switching in Individual ZnO Nanorod p-n Junctions.
International Semiconductor Conference (CAS 2019). New York: IEEE, 2019 - (Brezeanu, G.), s. 289-292. ISBN 978-1-7281-1888-8. ISSN 1545-827X.
[42nd International Semiconductor Conference (CAS). Sinaia (RO), 09.10.2019-11.10.2019]
R&D Projects: GA ČR(CZ) GA17-00546S; GA ČR(CZ) GA17-00355S
Institutional support: RVO:67985882
Keywords : Nanoprobe I-V * Nanoscale heterojunctions * FIB
OECD category: Electrical and electronic engineering
Permanent Link: http://hdl.handle.net/11104/0307889