0520842 - FZÚ 2020 RIV LT eng J - Journal Article
Hospodková, Alice - Slavická Zíková, Markéta - Hubáček, Tomáš - Pangrác, Jiří - Kuldová, Karla - Hájek, František - Dominec, Filip - Vetushka, Aliaksi - Hasenöhrl, S.
Improvement of GaN crystalline quality by SiN_x layer grown by MOVPE.
Lithuanian Journal of Physics. Roč. 59, č. 4 (2019), s. 179-186. ISSN 1648-8504. E-ISSN 1648-8504
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR(CZ) GA16-11769S; GA TA ČR TH02010014
Institutional support: RVO:68378271
Keywords : dislocations * MOVPE * GaN * SiN_x * photoluminescence
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 0.966, year: 2019 ; AIS: 0.16, rok: 2019
Method of publishing: Open access
DOI: https://doi.org/10.3952/physics.v59i4.4134
Permanent Link: http://hdl.handle.net/11104/0305500