Pressure-induced structural and electronic phase transitions in GaGeTe

Amit Pawbake, Christophe Bellin, Lorenzo Paulatto, Deepa S. Narang, Keevin Béneut, Benoit Baptiste, Paola Giura, Johan Biscaras, Frederico Alabarse, Dattatray J. Late, Otakar Frank, and Abhay Shukla
Phys. Rev. B 109, 054107 – Published 15 February 2024

Abstract

Chalcogenide-based compounds are an important part of the family of layered materials, extensively studied for their two-dimensional properties. An interesting line of investigation relates to the evolution of their properties with hydrostatic pressure, which could lead to structural transitions and itinerant electronic behavior. Here, we investigate the evolution of a layered ternary compound GaGeTe as a function of pressure with x-ray diffraction, Raman and infrared spectroscopy, and ab initio calculations. The Ge layer retains a germanenelike vibration though enveloped in Ga and Te layers. We show experimental and theoretical evidence of metallization in two steps. At 6 GPa Raman and infrared spectroscopic data undergo changes compatible with delocalized charge carriers. Calculations ascribe this to the Fermi-level crossing of a valence band. At 16 GPa infrared transmission and Raman modes disappear and x-ray diffraction signals a structural transition to a phase which is metallic according to our calculations. We obtain consistent agreement between experiment and theory concerning the structural, vibrational, and electronic structure evolution with pressure.

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  • Received 28 January 2022
  • Revised 22 December 2023
  • Accepted 25 January 2024
  • Corrected 28 February 2024

DOI:https://doi.org/10.1103/PhysRevB.109.054107

©2024 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Corrections

28 February 2024

Correction: The name of the ninth author was misspelled and has been fixed.

Authors & Affiliations

Amit Pawbake1,*, Christophe Bellin2,*, Lorenzo Paulatto2, Deepa S. Narang3, Keevin Béneut2, Benoit Baptiste2, Paola Giura2, Johan Biscaras2, Frederico Alabarse4, Dattatray J. Late5, Otakar Frank1, and Abhay Shukla2,†

  • 1J. Heyrovský Institute of Physical Chemistry of the Czech Academy of Sciences, Dolejškova 2155/3, CZ-182 23 Praha, Czech Republic
  • 2Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, Sorbonne Université, UMR CNRS 7590, MNHN, IRD UMR 206, 4 Place Jussieu, F-75005 Paris, France
  • 3Department of Physics, Indian Institute of Science, Bangalore 560012, Karnataka, India
  • 4Elettra Sincrotrone Trieste, S.C.p.A., I-34149 Basovizza, Trieste, Italy
  • 5MST, Brane Enterprises Private Ltd, Hyderabad 500081, India

  • *These authors contributed equally to this work.
  • abhay.shukla@sorbonne-universite.fr

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Issue

Vol. 109, Iss. 5 — 1 February 2024

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