Abstract
Low Gain Avalanche Detectors (LGADs) will be employed in the CMS MTD and ATLAS HGTD upgrades to mitigate the high levels of pile-up events expected in the High Luminosity phase of the LHC. Over the last several years, much attention has been focused on designing radiation-tolerant gain implants to ensure that these sensors survive the expected fluence (>1015 neq/cm2). This work reports several effects observed during our previous studies on two relevant phenomena Single Event Burnout (SEB) and carrier density-induced Gain Suppression (GS). Influence of irradiation level, pad configuration and gain layer depth on SEB are discussed. In this paper, we also extend GS study with a new insight into the spatio-temporal dynamics of charge transport in LGAD, probed with a focused ion beam.