Large damping-like spin-orbit torque in a 2D conductive 1T-TaS.sub.2./sub. monolayer

0539193 - FZÚ 2021 RIV US eng J - Článek v odborném periodiku
Husain, S. - Chen, X. - Gupta, R. - Behera, N. - Kumar, Prabhat - Edvinsson, T. - Garcia-Sanchez, F. - Brucas, R. - Chaudhary, S. - Sanyal, B. - Svedlindh, P. - Kumar, A.
Large damping-like spin-orbit torque in a 2D conductive 1T-TaS₂ monolayer.
Nano Letters. Roč. 20, č. 9 (2020), s. 6372-6380. ISSN 1530-6984. E-ISSN 1530-6992
Institucionální podpora: RVO:68378271
Klíčová slova: transition-metal dichalcogenide * damping-like torque * spin-torque ferromagnetic resonance * planar Hall effect
Obor OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impakt faktor: 11.189, rok: 2020
Způsob publikování: Open access

A damping-like spin-orbit torque (SOT) is a prerequisite for ultralow-power spin logic devices. Here, we report on the damping-like SOT in just one monolayer of the conducting transition-metal dichalcogenide (TMD) TaS2 interfaced with a NiFe (Py) ferromagnetic layer. The charge-spin conversion efficiency is found to be 0.25 ± 0.03 in TaS2(0.88)/Py(7), and the spin Hall conductivity (14.9 10 × Ω 5 2ℏe − − 1 1 m ) is found to be superior to values reported for other TMDs. We also observed sizable field-like torque in this heterostructure. The origin of this large damping-like SOT can be found in the interfacial properties of the TaS2/Py heterostructure, and the experimental findings are complemented by the results from density functional theory calculations. It is envisioned that the interplay between interfacial spin−orbit coupling and crystal symmetry yielding large damping-like SOT. The dominance of damping-like torque demonstrated in our study provides a promising path for designing the next-generation conducting TMD-based low-powered quantum memory devices
Trvalý link: http://hdl.handle.net/11104/0317378